Patents by Inventor Kuei-Sheng Wu
Kuei-Sheng Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240135745Abstract: An electronic device has a narrow viewing angle state and a wide viewing angle state, and includes a panel and a light source providing a light passing through the panel. In the narrow viewing angle state, the light has a first relative light intensity and a second relative light intensity. The first relative light intensity is the strongest light intensity, the second relative light intensity is 50% of the strongest light intensity, the first relative light intensity corresponds to an angle of 0°, the second relative light intensity corresponds to a half-value angle, and the half-value angle is between ?15° and 15°. In the narrow angle state, a third relative light intensity at each angle between 20° and 60° or each angle between ?20° and ?60° is lower than 20% of the strongest light intensity.Type: ApplicationFiled: January 3, 2024Publication date: April 25, 2024Applicant: InnnoLux CorporationInventors: Kuei-Sheng Chang, Po-Yang Chen, Kuo-Jung Wu, I-An Yao, Wei-Cheng Lee, Hsien-Wen Huang
-
Patent number: 11942563Abstract: A manufacturing method of a chip package includes patterning a wafer to form a scribe trench, in which a light-transmissive function layer below the wafer is in the scribe trench, the light-transmissive function layer is between the wafer and a carrier, and a first included angle is formed between an outer wall surface and a surface of the wafer facing the light-transmissive function layer; cutting the light-transmissive function layer and the carrier along the scribe trench to form a chip package that includes a chip, the light-transmissive function layer, and the carrier; and patterning the chip to form an opening, in which the light-transmissive function layer is in the opening, a second included angle is formed between an inner wall surface of the chip and a surface of the chip facing the light-transmissive function layer, and is different from the first included angle.Type: GrantFiled: June 1, 2023Date of Patent: March 26, 2024Assignee: XINTEC INC.Inventors: Chia-Sheng Lin, Hui-Hsien Wu, Jian-Hong Chen, Tsang-Yu Liu, Kuei-Wei Chen
-
Patent number: 11921372Abstract: A display device including a first light emitting unit, a second light emitting unit, a first optical layer and a second optical layer is disclosed. The first optical layer is disposed on at least one of the first light emitting unit and the second light emitting unit, and the first optical layer includes a collimating layer. The second optical layer is disposed on the first light emitting unit. The second optical layer is configured to scatter a first light emitted from the first light emitting unit but does not scatter a second light emitted from the second light emitting unit.Type: GrantFiled: February 14, 2023Date of Patent: March 5, 2024Assignee: InnoLux CorporationInventors: Kuei-Sheng Chang, Kuo-Jung Wu, Po-Yang Chen, I-An Yao
-
Publication number: 20230413441Abstract: A circuit board assembly is provided and includes a first circuit board, a second circuit board and a first connecting module. The first connecting module includes a first connecting wire, a first connector and a second connector. The first circuit board includes a first processor, and the second circuit board includes a second processor. One end of the first connector is connected to one end of the first connecting wire, and the other end of the first connector is connected to the first circuit board. One end of the second connector is connected to the other end of the first connecting wire, and the other end of the second connector is connected to the second circuit board. The first connector is adjacent to the first processor, and the second connector is adjacent to the second processor.Type: ApplicationFiled: August 25, 2023Publication date: December 21, 2023Inventors: CHING-HO HSIEH, MING-HSING WU, KUEI-SHENG WU
-
Patent number: 11825604Abstract: A circuit board assembly is provided and includes a first circuit board, a second circuit board and a first connecting module. The first connecting module includes a first connecting wire, a first connector and a second connector. The first circuit board includes a first processor, and the second circuit board includes a second processor. One end of the first connector is connected to one end of the first connecting wire, and the other end of the first connector is connected to the first circuit board. One end of the second connector is connected to the other end of the first connecting wire, and the other end of the second connector is connected to the second circuit board. The first connector is adjacent to the first processor, and the second connector is adjacent to the second processor.Type: GrantFiled: November 18, 2021Date of Patent: November 21, 2023Assignee: Unimicron Technology CorporationInventors: Ching-Ho Hsieh, Ming-Hsing Wu, Kuei-Sheng Wu
-
Publication number: 20230123068Abstract: A circuit board assembly is provided and includes a first circuit board, a second circuit board and a first connecting module. The first connecting module includes a first connecting wire, a first connector and a second connector. The first circuit board includes a first processor, and the second circuit board includes a second processor. One end of the first connector is connected to one end of the first connecting wire, and the other end of the first connector is connected to the first circuit board. One end of the second connector is connected to the other end of the first connecting wire, and the other end of the second connector is connected to the second circuit board. The first connector is adjacent to the first processor, and the second connector is adjacent to the second processor.Type: ApplicationFiled: November 18, 2021Publication date: April 20, 2023Inventors: Ching-Ho Hsieh, Ming-Hsing Wu, Kuei-Sheng Wu
-
Patent number: 10504821Abstract: A TSV structure includes a substrate comprising at least a TSV opening formed therein, a conductive layer disposed in the TSV opening, and a bi-layered liner disposed in between the substrate and the conductive layer. More important, the bi-layered liner includes a first liner and a second liner, and a Young's modulus of the first liner is different from a Young's modulus of the second liner.Type: GrantFiled: January 29, 2016Date of Patent: December 10, 2019Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chu-Fu Lin, Ming-Tse Lin, Kuei-Sheng Wu
-
Patent number: 10145889Abstract: A testkey structure including the following components is provided. A fin structure is disposed on a substrate and stretches along a first direction. A first gate structure and a second gate structure are disposed on the fin structure and stretch along a second direction. A first common source region is disposed in the fin structure between the first gate structure and the second gate structure. A first drain region is disposed in the fin structure at a side of the first gate structure opposite to the first common source region. A second drain region disposed in the fin structure at a side of the second gate structure opposite to the first common source region. A testkey structure is symmetrical along a horizontal line crossing the first common source region. The present invention further provides a method of measuring device defect or connection defect by using the same.Type: GrantFiled: April 6, 2017Date of Patent: December 4, 2018Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kuei-Sheng Wu, Wen-Jung Liao, Wen-Shan Hsiao
-
Publication number: 20180315714Abstract: A chip package structure and a manufacturing method thereof are provided. The chip package structure includes a circuit board, a chip, a housing, an antenna pattern, a conductive line pattern and a shielding layer. The chip is disposed on the circuit board. The housing is disposed on the circuit board and covers the chip, wherein the housing includes a cover and sidewalls, and the housing contains catalyst particles. The antenna pattern is disposed on an outer surface of the cover. The conductive line pattern is disposed on an outer surface of the sidewalls and electrically connected to the antenna pattern and the circuit board. The shielding layer is disposed at least on an inner surface of the cover.Type: ApplicationFiled: April 26, 2017Publication date: November 1, 2018Applicant: Unimicron Technology Corp.Inventors: Jui-Chun Kuo, Chuang-Yi Chiu, Kuei-Sheng Wu, Wen-Shen Lo
-
Publication number: 20180292449Abstract: A testkey structure including the following components is provided. A fin structure is disposed on a substrate and stretches along a first direction. A first gate structure and a second gate structure are disposed on the fin structure and stretch along a second direction. A first common source region is disposed in the fin structure between the first gate structure and the second gate structure. A first drain region is disposed in the fin structure at a side of the first gate structure opposite to the first common source region. A second drain region disposed in the fin structure at a side of the second gate structure opposite to the first common source region. A testkey structure is symmetrical along a horizontal line crossing the first common source region. The present invention further provides a method of measuring device defect or connection defect by using the same.Type: ApplicationFiled: April 6, 2017Publication date: October 11, 2018Inventors: Kuei-Sheng Wu, Wen-Jung Liao, Wen-Shan Hsiao
-
Patent number: 9978666Abstract: A method for is used for forming a semiconductor device. The method includes forming an ILD layer on a substrate and a buffer layer on the ILD layer, wherein at least one contact is formed in the ILD layer; forming an opening through the buffer layer, the ILD layer, and the substrate; forming a liner structure layer over the substrate, wherein an exposed surface of the opening is covered by the liner structure layer; depositing a conductive material over the substrate to fill the opening; performing a polishing process, to polish over the substrate and stop at the buffer layer, wherein the liner structure layer and the conductive material remaining in the opening form a conductive via; performing an etching back process, to remove the buffer layer and expose the ILD layer, wherein a top portion of the conductive via is also exposed and higher than the ILD layer.Type: GrantFiled: July 28, 2017Date of Patent: May 22, 2018Assignee: United Microelectronics Corp.Inventors: Kuei-Sheng Wu, Ming-Tse Lin
-
Publication number: 20170330820Abstract: A method for is used for forming a semiconductor device. The method includes forming an ILD layer on a substrate and a buffer layer on the ILD layer, wherein at least one contact is formed in the ILD layer; forming an opening through the buffer layer, the ILD layer, and the substrate; forming a liner structure layer over the substrate, wherein an exposed surface of the opening is covered by the liner structure layer; depositing a conductive material over the substrate to fill the opening; performing a polishing process, to polish over the substrate and stop at the buffer layer, wherein the liner structure layer and the conductive material remaining in the opening form a conductive via; performing an etching back process, to remove the buffer layer and expose the ILD layer, wherein a top portion of the conductive via is also exposed and higher than the ILD layer.Type: ApplicationFiled: July 28, 2017Publication date: November 16, 2017Applicant: United Microelectronics Corp.Inventors: Kuei-Sheng Wu, Ming-Tse Lin
-
Patent number: 9761509Abstract: A method for is used for forming a semiconductor device having a through-substrate via. The method includes providing a preliminary structure having an ILD layer on a substrate and a buffer layer on the ILD layer; forming an opening through the buffer layer, the ILD layer, and the substrate; forming a liner structure layer over the substrate, wherein an exposed surface of the opening is covered by the liner structure layer; depositing a conductive material over the substrate to fill the opening; performing a polishing process, to polish over the substrate and stop at the buffer layer, wherein the liner structure layer and the conductive material remaining in the opening form a conductive via; performing an etching back process, to remove the buffer layer and expose the ILD layer, wherein a top portion of the conductive via is also exposed and higher than the ILD layer.Type: GrantFiled: December 29, 2015Date of Patent: September 12, 2017Assignee: United Microelectronics Corp.Inventors: Kuei-Sheng Wu, Ming-Tse Lin
-
Publication number: 20170221796Abstract: A TSV structure includes a substrate comprising at least a TSV opening formed therein, a conductive layer disposed in the TSV opening, and a bi-layered liner disposed in between the substrate and the conductive layer. More important, the bi-layered liner includes a first liner and a second liner, and a Young's modulus of the first liner is different from a Young's modulus of the second liner.Type: ApplicationFiled: January 29, 2016Publication date: August 3, 2017Inventors: Chu-Fu Lin, Ming-Tse Lin, Kuei-Sheng Wu
-
Publication number: 20170186668Abstract: A method for is used for forming a semiconductor device having a through-substrate via. The method includes providing a preliminary structure having an ILD layer on a substrate and a buffer layer on the ILD layer; forming an opening through the buffer layer, the ILD layer, and the substrate; forming a liner structure layer over the substrate, wherein an exposed surface of the opening is covered by the liner structure layer; depositing a conductive material over the substrate to fill the opening; performing a polishing process, to polish over the substrate and stop at the buffer layer, wherein the liner structure layer and the conductive material remaining in the opening form a conductive via; performing an etching back process, to remove the buffer layer and expose the ILD layer, wherein a top portion of the conductive via is also exposed and higher than the ILD layer.Type: ApplicationFiled: December 29, 2015Publication date: June 29, 2017Inventors: Kuei-Sheng Wu, Ming-Tse Lin
-
Patent number: 9412686Abstract: The present disclosure relates to an interposer structure and a manufacturing method thereof. The interposer structure includes a first dielectric layer, a conductive pad, and a bump. The conductive pad is disposed in the first dielectric layer, wherein a top surface of the conductive pad is exposed from a first surface of the first dielectric layer, the conductive pad further includes a plurality of connection feet, and the connection feet protrude from a bottom surface of the conductive pad to a second surface of the first dielectric layer. The bump is disposed on the second surface of the first dielectric layer, and the bump directly contacts to the connection feet. Through the aforementioned interposer structure, it is sufficient to achieve the purpose of improving the electrical performance of the semiconductor device and avoiding the signal being loss through the TSV.Type: GrantFiled: August 26, 2014Date of Patent: August 9, 2016Assignee: UNITED MICROELECTRONICS CORP.Inventors: Ming-Tse Lin, Kuei-Sheng Wu, Chien-Li Kuo
-
Publication number: 20160093687Abstract: The present invention provides a method for fabricating a capacitor structure, including the steps of: providing a substrate; forming a first conductive structure and a dielectric structure over the substrate, wherein the first conductive structure is enclosed by the dielectric structure; forming a first trench in the dielectric structure, so that a first surface of the first conductive structure is exposed through the first trench; forming a first capacitor electrode and a capacitor dielectric layer on a bottom and a sidewall of the first trench and on a top surface of the dielectric structure, so that the first capacitor electrode is electrically contacted with the first surface of the first conductive structure; and removing the first capacitor electrode and the capacitor dielectric layer on the top surface of the dielectric structure; forming a second capacitor electrode on a surface of the capacitor dielectric layer. A capacitor structure is also provided.Type: ApplicationFiled: December 10, 2015Publication date: March 31, 2016Inventors: Chien-Li Kuo, Kuei-Sheng WU, Ju-Bao ZHANG, Rui-Huang CHENG, Xing-Hua ZHANG, Hong LIAO
-
Publication number: 20160064314Abstract: The present disclosure relates to an interposer structure and a manufacturing method thereof. The interposer structure includes a first dielectric layer, a conductive pad, and a bump. The conductive pad is disposed in the first dielectric layer, wherein a top surface of the conductive pad is exposed from a first surface of the first dielectric layer, the conductive pad further includes a plurality of connection feet, and the connection feet protrude from a bottom surface of the conductive pad to a second surface of the first dielectric layer. The bump is disposed on the second surface of the first dielectric layer, and the bump directly contacts to the connection feet. Through the aforementioned interposer structure, it is sufficient to achieve the purpose of improving the electrical performance of the semiconductor device and avoiding the signal being loss through the TSV.Type: ApplicationFiled: August 26, 2014Publication date: March 3, 2016Inventors: Ming-Tse Lin, Kuei-Sheng Wu, Chien-Li Kuo
-
Publication number: 20150332996Abstract: The present invention provides an interposer including multiple circuit designs and an uppermost circuit design disposed on the circuit designs. A maximum exposure region is defined as a maximum size which can be defined by a single shot of a lithographic scanner. The sizes of the circuit designs below the uppermost circuit design are smaller than the size of the maximum exposure region. Therefore, the circuit designs are respectively formed by only a single shot of the lithographic scanner. The uppermost circuit design has a length greater than the length of the maximum exposure region, so that the circuit design is formed by stitching two photomasks lithographically.Type: ApplicationFiled: May 19, 2014Publication date: November 19, 2015Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chien-Li Kuo, Kuei-Sheng Wu, Ming-Tse Lin, Chung-Sung Chiang
-
Patent number: D969745Type: GrantFiled: June 25, 2019Date of Patent: November 15, 2022Assignee: Unimicron Technology Corp.Inventors: Ching-Ho Hsieh, Ming-Hsing Wu, Shang-Wei Chen, Kuei-Sheng Wu