Abstract: Disclosed are an LED direct-view projection array light-emitting module and a display screen. The light-emitting module includes a video decoding drive board, a display unit drive board, display units, and an imaging unit from the bottom up. The present disclosure uses a semiconductor technology to integrate and miniaturize light sources that emit light actively to obtain integrated LED array chips as light-emitting sources, directly controls the light-emitting sources through a circuit, then uses magnification objective lenses to perform a certain magnification according to an application scenario requirement, and then focuses on and image each pixel by using a focusing lens. Through a combination of the magnification lenses and the focusing lenses, when the light source intensity is sufficient, products of various sizes can be designed; when splicing into a large screen, splicing angles can be adjusted arbitrarily to realize a flexible screen or a special-shaped screen.

Abstract: Disclosed are an LED direct-view projection array light-emitting module and a display screen. The light-emitting module includes a video decoding drive board, a display unit drive board, display units, and an imaging unit from the bottom up. The present disclosure uses a semiconductor technology to integrate and miniaturize light sources that emit light actively to obtain integrated LED array chips as light-emitting sources, directly controls the light-emitting sources through a circuit, then uses magnification objective lenses to perform a certain magnification according to an application scenario requirement, and then focuses on and image each pixel by using a focusing lens. Through a combination of the magnification lenses and the focusing lenses, when the light source intensity is sufficient, products of various sizes can be designed; when splicing into a large screen, splicing angles can be adjusted arbitrarily to realize a flexible screen or a special-shaped screen.

Abstract: To program in a nonvolatile memory device including a cell region including first metal pads and a peripheral region including second metal pads and vertically connected to the cell region by the first metal pads and the second metal pads, a memory block is provided with a plurality of sub blocks disposed in a vertical direction where the memory block includes a plurality of cell strings each including a plurality of memory cells connected in series and disposed in the vertical direction. A plurality of intermediate switching transistors are disposed in a boundary portion between two adjacent sub blocks in the vertical direction. Each of the plurality of intermediate switching transistors is selectively activated based on a program address during a program operation. The selectively activating each of the plurality of intermediate switching transistors includes selectively turning on one or more intermediate switching transistors in a selected cell string based on the program address.

Abstract: The disclosure discloses an ultraviolet lamp bead package structure and a preparation method thereof. The ultraviolet lamp bead package structure includes a substrate and a first metal layer arranged on each of a package surface and a back surface of the substrate. A Zener chip is arranged on the electrode region of the first metal layer. The first metal layer also has a peripheral region. A second metal layer is arranged on the first metal layer. An Ultra Violet C radiation (UVC) chip is arranged on the electrode region of the second metal layer. The second metal layer is provided with a quartz lens by sealing through the peripheral region of the second metal layer. The quartz lens wraps the UVC chip and the Zener chip. An filler with anti-UVC characteristic is filled between the quartz lens and each of the UVC chip and the Zener chip.

Abstract: A belt drive system includes a driving wheel, a driven wheel and a drive belt. A first and a second drive belt tensioning mechanism are included. When a first drive member rotates, it moves relative to a first mounting seat and along an axial direction of the first drive member to drive the first tensioning device to move relative to the housing. When a second drive member rotates, it drives the second tensioning device to move relative to the second mounting seat. A related automatic walking robot includes a housing, a road wheel set rotatably arranged on the housing, and a walking motor arranged on the housing for driving the road wheel set.

Abstract: To program in a nonvolatile memory device including a cell region including first metal pads and a peripheral region including second metal pads and vertically connected to the cell region by the first metal pads and the second metal pads, a memory block is provided with a plurality of sub blocks disposed in a vertical direction where the memory block includes a plurality of cell strings each including a plurality of memory cells connected in series and disposed in the vertical direction. A plurality of intermediate switching transistors are disposed in a boundary portion between two adjacent sub blocks in the vertical direction. Each of the plurality of intermediate switching transistors is selectively activated based on a program address during a program operation. The selectively activating each of the plurality of intermediate switching transistors includes selectively turning on one or more intermediate switching transistors in a selected cell string based on the program address.

Abstract: To program in a nonvolatile memory device, a memory block is provided with a plurality of sub blocks disposed in a vertical direction where the memory block includes a plurality of cell strings each including a plurality of memory cells connected in series and disposed in the vertical direction. A plurality of intermediate switching transistors are disposed in a boundary portion between two adjacent sub blocks in the vertical direction. Each of the plurality of intermediate switching transistors is selectively activated based on a program address during a program operation. The selectively activating each of the plurality of intermediate switching transistors includes selectively turning on one or more intermediate switching transistors in a selected cell string based on the program address.

Abstract: A nonvolatile memory includes a first sub-block defined by a first string select line and a first word line; a second sub-block defined by a second string select line different from the first string select line and a second word line different from the first word line; a first vacant block defined by the first string select line and the second word line; and a second vacant block defined by the second string select line and the first word line. First data is programmed in the first sub-block with, second data is programmed in the second sub-block, and no data is programmed in the first vacant block and the second vacant block.

Abstract: A belt drive system includes a driving wheel, a driven wheel and a drive belt. A first and a second drive belt tensioning mechanism are included. When a first drive member rotates, it moves relative to a first mounting seat and along an axial direction of the first drive member to drive the first tensioning device to move relative to the housing. When a second drive member rotates, it drives the second tensioning device to move relative to the second mounting seat. A related automatic walking robot includes a housing, a road wheel set rotatably arranged on the housing, and a walking motor arranged on the housing for driving the road wheel set.

Abstract: A method of operating a nonvolatile memory device is provided where the nonvolatile memory device includes a plurality of cell strings, and each cell string includes a plurality of multi-level cells. a voltage of a selected word line is sequentially changed to sequentially have a plurality of read voltages for determining threshold voltage states of the plurality of multi-level cells. A voltage of an adjacent word line adjacent to the selected word line is sequentially changed in synchronization with voltage changing time points of the selected word line. A load of the selected word line is reduced and an operation speed of the nonvolatile memory device is increased by synchronizing the voltage change of the selected word line and the voltage change of the adjacent word line in the same direction.

Abstract: Provided is a method performed by a nonvolatile memory device, the method may include: initiating a first program operation corresponding to a first program loop among a plurality of program loops; receiving a suspend command for an urgent read operation during the first program operation; determining a recovery timing from either of a first timing contemporaneous with the receiving the suspend command, and a second timing after completion of the first program operation, based on the suspend command; and initiating a recovery at the determined recovery timing by applying a recovery voltage to a selected word line.

Abstract: A smart mower includes a housing with an inner housing located at a lower portion and an outer housing connected with the inner housing and located at an upper portion; a cutting mechanism; and a walking mechanism. The cutting mechanism and the walking mechanism are mounted in the inner housing. A handle is disposed on the inner housing adjacent the outer housing for conveying the smart mower. Projection of the handle on a horizontal plane is within a range of projection of the outer housing on the horizontal plane.

Abstract: An erase voltage is applied to channels of a selected string group to erase only the selected string group. A size and a number of the spare blocks for storing meta data are reduced and thus a size of the nonvolatile memory device is reduced by reducing unit capacity of the erase operation through grouping of the cell strings. Lifetime of the nonvolatile memory device is extended by having control over erasing some cell strings and not others. Control of cell strings for erasure includes allowing some control lines to float, in some embodiments. In some embodiments, ground select transistors with different thresholds and appropriately applied voltages are used to control erasure of particular cell strings. In some embodiments, biasing of word lines is applied differently to portions of a particular cell string to only erase a portion of the particular cell string.

Abstract: Provided are a nonvolatile memory and a method of operating the same. The nonvolatile memory includes a first sub-block defined by a first string select line and a first word line; a second sub-block defined by a second string select line different from the first string select line and a second word line different from the first word line; a first vacant block defined by the first string select line and the second word line; and a second vacant block defined by the second string select line and the first word line. First data is programmed in the first sub-block with, second data is programmed in the second sub-block, and no data is programmed in the first vacant block and the second vacant block.

Abstract: A method of operating a nonvolatile memory device is provided where the nonvolatile memory device includes a plurality of cell strings, and each cell string includes a plurality of multi-level cells. a voltage of a selected word line is sequentially changed to sequentially have a plurality of read voltages for determining threshold voltage states of the plurality of multi-level cells. A voltage of an adjacent word line adjacent to the selected word line is sequentially changed in synchronization with voltage changing time points of the selected word line. A load of the selected word line is reduced and an operation speed of the nonvolatile memory device is increased by synchronizing the voltage change of the selected word line and the voltage change of the adjacent word line in the same direction.

Abstract: An erase voltage is applied to channels of a selected string group to erase only the selected string group. A size and a number of the spare blocks for storing meta data are reduced and thus a size of the nonvolatile memory device is reduced by reducing unit capacity of the erase operation through grouping of the cell strings. Lifetime of the nonvolatile memory device is extended by having control over erasing some cell strings and not others. Control of cell strings for erasure includes allowing some control lines to float, in some embodiments. In some embodiments, ground select transistors with different thresholds and appropriately applied voltages are used to control erasure of particular cell strings. In some embodiments, biasing of word lines is applied differently to portions of a particular cell string to only erase a portion of the particular cell string.

Abstract: To program in a nonvolatile memory device, a memory block is provided with a plurality of sub blocks disposed in a vertical direction where the memory block includes a plurality of cell strings each including a plurality of memory cells connected in series and disposed in the vertical direction. A plurality of intermediate switching transistors are disposed in a boundary portion between two adjacent sub blocks in the vertical direction. Each of the plurality of intermediate switching transistors is selectively activated based on a program address during a program operation. The selectively activating each of the plurality of intermediate switching transistors includes selectively turning on one or more intermediate switching transistors in a selected cell string based on the program address.

Abstract: Provided is a method performed by a nonvolatile memory device, the method may include: initiating a first program operation corresponding to a first program loop among a plurality of program loops; receiving a suspend command for an urgent read operation during the first program operation; determining a recovery timing from either of a first timing contemporaneous with the receiving the suspend command, and a second timing after completion of the first program operation, based on the suspend command; and initiating a recovery at the determined recovery timing by applying a recovery voltage to a selected word line.