Abstract: A method for manufacturing a memory device includes detecting, with a tester, whether memory cells included in a memory device are defective, and programming, with the tester, start addresses of defect-free memory regions for addressing modes of the memory device based on a result of the detection.

Abstract: A storage device includes a memory device configured to store data and a memory controller connected to the memory device through a data strobe line and a plurality of data lines. The storage device adds a predetermined specific pattern in front of data and processes data input following the specific pattern as valid data during a read or write operation. The specific pattern is provided in alignment with a data strobe signal (DQS) latency cycle. The memory controller detects a specific pattern input from the memory device during a read operation and processes data input following the specific pattern as valid data when the detected specific pattern matches an internally stored specific pattern.

Abstract: In one embodiment, the method includes sensing, by a memory device, a temperature of the memory device; and generating, by the memory device, a response to a single received command. The response includes temperature information, and the temperature information provides information on the sensed temperature. In one embodiment, the single received command is a read status request command, the read status request command requests status information on the memory device, and the status information includes the temperature information.

Abstract: A method for operating a memory controller is provided. The method includes generating a pseudo random number by using a seed included in a stored seed group corresponding to a page to be currently programmed, wherein the stored seed group is stored among a plurality of seed groups. Data to be programmed into the current page is randomizing by using the pseudo random number and the memory controller outputs the randomized data. A solid state drive (SSD) or other memory storage device such as a memory card includes the memory controller and includes a read only memory (ROM) storing the plurality of seed groups. The memory controller includes a micro-processor and a read only memory (ROM) storing executable code for causing the micro-processor to access the plurality of stored seed groups and to select a seed therefrom corresponding to a page to be currently programmed.

Abstract: A storage device includes a nonvolatile memory and a memory controller. The nonvolatile memory performs read, write, and erase operations. The memory controller operates in an operating mode where the memory controller exchanges a voltage signal, set to a reference voltage level within an allowable range, with the nonvolatile memory or receives the voltage signal from an external device. When operating in the operating mode, the memory controller optimizes an operating frequency of the nonvolatile memory depending on a voltage level of the voltage signal and a temperature.

Abstract: A storage system is provided which includes: a storage device including a first memory, which may be nonvolatile memory, and a second memory, which may be a device memory, and configured to request a test on at least one of the first and second memories; and a host configured to test the at least one memory in response to the request for the memory test from the storage device and store the test result in the first memory or a third memory.

Abstract: A method for manufacturing a memory device includes detecting, with a tester, whether memory cells included in a memory device are defective, and programming, with the tester, start addresses of defect-free memory regions for addressing modes of the memory device based on a result of the detection.

Abstract: A method for operating a memory controller is provided. The method includes generating a pseudo random number by using a seed included in a stored seed group corresponding to a page to be currently programmed, wherein the stored seed group is stored among a plurality of seed groups. Data to be programmed into the current page is randomizing by using the pseudo random number and the memory controller outputs the randomized data. A solid state drive (SSD) or other memory storage device such as a memory card includes the memory controller and includes a read only memory (ROM) storing the plurality of seed groups. The memory controller includes a micro-processor and a read only memory (ROM) storing executable code for causing the micro-processor to access the plurality of stored seed groups and to select a seed therefrom corresponding to a page to be currently programmed.

Abstract: Random sequence data is sequentially generated based on a seed assigned to a selected memory space, and one of access-requested segments of the selected memory space is logically combined with the sequentially generated random sequence data to transfer the access-requested segment. The sequentially generating and the logically combining are iteratively performed until remaining access-requested segments all transferred.

Abstract: Random sequence data is sequentially generated based on a seed assigned to a selected memory space, and one of access-requested segments of the selected memory space is logically combined with the sequentially generated random sequence data to transfer the access-requested segment. The sequentially generating and the logically combining are iteratively performed until remaining access-requested segments all transferred.

Abstract: Random sequence data is sequentially generated based on a seed assigned to a selected memory space, and one of access-requested segments of the selected memory space is logically combined with the sequentially generated random sequence data to transfer the access-requested segment. The sequentially generating and the logically combining are iteratively performed until remaining access-requested segments all transferred.

Abstract: A method for operating a memory controller is disclosed. The method includes receiving data output from a memory block of a non-volatile memory device and changing erase count of the memory block based on the received data.

Abstract: A memory controller may include a cell state generator that is configured to generate a cell state for each of a plurality of multi-level cells included in a non-volatile memory device, using data of pages. The memory controller may also include a pseudo-random number generator that is configured to generate a pseudo-random number. The memory controller may further include an operator that is configured to change the cell state of each multi-level cell using the pseudo-random number, and that is configured to output a changed cell state for each multi-level cell.

Abstract: An elapsed time with respect to a programming operation on a memory cell of a nonvolatile memory is determined, a read voltage is adjusted based on the determined elapsed time and a read operation is performed on the memory cell using the adjusted read voltage. Determining the elapsed time may be preceded by performing the programming operation in response to a first access request and determining the elapsed time may include determining the elapsed time in response to a second access request. Memory systems supporting such operations are also described.

Abstract: A method of controlling a memory, determining whether data access is random; generating a first random sequence (RS) data based on a first seed if data access is not random (column offset=0); mixing the first RS data with data read from the memory or data to be written to the memory; generating a second seed from a first seed if data access is random (column offset not=0); generating a second RS data based on the second seed; and mixing the second RS data with data read from the memory or data to be written to the memory.

Abstract: A method is provided for adjusting a read voltage in a flash memory device. The method includes storing first program count information when first pages of flash memory cells are programmed, the first program count information indicating a number of bits having a first logic value from among bits of data programmed in the first pages of the flash memory cells, and obtaining first read count information by counting a number of bits having the first logic value from among bits of data read from the first pages of the flash memory cells, while reading data from the flash memory cells using read voltages. The read voltages are adjusted based on the difference between the first read count information and the first program count information.

Abstract: A flash memory device includes a memory cell array, a seed selector circuit, and a randomizing and de-randomizing circuit. The memory cell array includes memory cells forming multiple pages. The seed selector circuit stores seeds corresponding to the multiple pages, respectively. The randomizing and de-randomizing circuit randomizes data to be stored in a selected page. Each page has a corresponding seed and includes multiple sectors having corresponding sector offset values and seed values generated from the seed corresponding to the page. The seed selector circuit selects a seed value from the seed values of the selected page based on a sector offset value indicating a sector of the selected page to which a column offset value, input with an access request, belongs. The randomizing and de-randomizing circuit randomizes data to be stored in the selected page based on the seed value selected by the seed selector circuit.

Abstract: A method is provided for adjusting a read voltage in a flash memory device. The method includes storing first program count information when first pages of flash memory cells are programmed, the first program count information indicating a number of bits having a first logic value from among bits of data programmed in the first pages of the flash memory cells, and obtaining first read count information by counting a number of bits having the first logic value from among bits of data read from the first pages of the flash memory cells, while reading data from the flash memory cells using read voltages. The read voltages are adjusted based on the difference between the first read count information and the first program count information.

Abstract: A memory controller may include a cell state generator that is configured to generate a cell state for each of a plurality of multi-level cells included in a non-volatile memory device, using data of pages. The memory controller may also include a pseudo-random number generator that is configured to generate a pseudo-random number. The memory controller may further include an operator that is configured to change the cell state of each multi-level cell using the pseudo-random number, and that is configured to output a changed cell state for each multi-level cell.

Abstract: A method for operating a memory controller is provided. The method includes generating a pseudo random number by using a seed included in a stored seed group corresponding to a page to be currently programmed, wherein the stored seed group is stored among a plurality of seed groups. Data to be programmed into the current page is randomizing by using the pseudo random number and the memory controller outputs the randomized data. A solid state drive (SSD) or other memory storage device such as a memory card includes the memory controller and includes a read only memory (ROM) storing the plurality of seed groups. The memory controller includes a micro-processor and a read only memory (ROM) storing executable code for causing the micro-processor to access the plurality of stored seed groups and to select a seed therefrom corresponding to a page to be currently programmed.