Abstract: An apparatus can include a block program erase count (PEC) component. The block PEC component can monitor a quantity of program erase counts (PECs) for each particular type of block of a non-volatile memory array. The block PEC component can further determine which block of the superblock to write host data to next based on the quantity of PECs. The block PEC component can further write host data to the determined block.

Abstract: A processing device of a memory sub-system is configured to receive a request to add content to a system data structure, wherein a first plurality of blocks of a common pool of blocks are allocated to the system data structure and a second plurality of blocks of the common pool of blocks are allocated to user data; determine whether user data has been written to the second plurality of blocks of the common pool of blocks within a threshold amount of time; and responsive to determining that the user data has not been written to the second plurality of blocks within the threshold amount of time, allocate a block from the second plurality of blocks of the common pool of blocks allocated to user data to the first plurality of blocks of the common pool of blocks allocated for the system data structure.

Abstract: An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to receive a reset signal from a host computer system in communication with the memory system; identify, by decoding the reset signal, a host event specified by the reset signal; and process the identified host event.

Abstract: Described are systems and methods for performing memory programming operations in the overwrite mode. An example memory device comprises: a memory array comprising a plurality of memory cells electrically coupled to a plurality of wordlines and a plurality of bitlines; and a controller coupled to the memory array, the controller to perform operations comprising: responsive to identifying a first data item to be stored by a portion of the memory array, causing a first memory programming operation to be performed to program, to a first target threshold voltage, a set of memory cells comprised by the portion of the memory array; and responsive to identifying a second data item to be stored by the portion of the memory array, causing a second memory programming operation to be performed to program the set of memory cells to a second target threshold voltage exceeding the first target threshold voltage.

Abstract: Disclosed in some examples are memory devices which feature customizable Single Level Cell (SLC) and Multiple Level Cell (MLC) configurations. The configuration (e.g., the size and position) of the SLC cache may have an impact on power consumption, speed, and other performance of the memory device. An operating system of an electronic device to which the memory device is installed may wish to achieve different performance of the device based upon certain conditions detectable by the operating system. In this way, the performance of the memory device can be customized by the operating system through adjustments of the performance characteristics of the SLC cache.

Abstract: Disclosed in some examples are memory devices which feature customizable Single Level Cell (SLC) and Multiple Level Cell (MLC) configurations. The configuration (e.g., the size and position) of the SLC cache may have an impact on power consumption, speed, and other performance of the memory device. An operating system of an electronic device to which the memory device is installed may wish to achieve different performance of the device based upon certain conditions detectable by the operating system. In this way, the performance of the memory device can be customized by the operating system through adjustments of the performance characteristics of the SLC cache.

Abstract: Various embodiments described herein provide for a page program sequence for a block of a memory device, such as a negative-and (NAND)-type memory device, where all the wordlines are programmed with respect to a given set of page types (e.g., LP pages) prior to wordlines are programmed with respect to a next set of page types (e.g., UP and XP pages).

Abstract: Methods, systems, and devices for data migration techniques are described. The memory system may receive a command associated with a write operation from a host device. The memory system may determine whether to use a data migration technique for writing data to the memory device based on receiving the command. In some cases, the memory system may select a tri-level write format instead of a quad-level write format for writing the data and write the data using the tri-level write format. The memory system may convert the data from the tri-level write format to the quad-level write format based on writing the data using the tri-level write format.

Abstract: Apparatus and methods are disclosed, including using a memory controller to partition a memory array into a first portion and a second portion, the first portion and second portion having non-overlapping logical block addressing (LBA) ranges. The memory controller assigns a first granularity of a first logical-to-physical (L2P) mapping table entry for the first portion of the memory array designated for a first usage, and a second granularity of a second L2P mapping table entry for the second portion of the memory array designated for a second usage, where the second granularity is not equal to the first granularity. The memory controller stores the first granularity and the second granularity in the memory array, and stores at least a portion of the first L2P mapping table entry and the second L2P mapping table entry in an L2P cache of the memory controller.

Abstract: A memory device comprises a memory control unit including a processor configured to control operation of the memory array according to a first memory management protocol for memory access operations, the first memory management protocol including boundary conditions for multiple operating conditions comprising program/erase (P/E) cycles, error management operations, drive writes per day (DWPD), and power consumption; monitor operating conditions of the memory array for the P/E cycles, error management operations, DWPD, and power consumption; determine when a boundary condition for one of the multiple operating conditions is met; and in response to determining that a first boundary condition for a first monitored operating condition is met, change one or more operating conditions of the first memory management protocol to establish a second memory management protocol for the memory access operations, the second memory management protocol including a change boundary condition of a second monitored operating con

Abstract: Methods, systems, and devices for a multi-tier cache for a memory system are described. A memory device may include memory cells configured as cache storage and memory cells configured as main storage. The cache storage may be a multi-tier cache and may include sets of different types of memory cells or memory cells operated as different types of memory cells, with different latencies, storage densities, or other performance characteristics. The memory device or a controller or host system for the memory device may determine the set of memory cells within the multi-tier cache to which a set of data is to be written, or may move the set of data within the multi-tier cache or between the multi-tier cache and the main storage, based on one or more of a variety of performance considerations.

Abstract: Methods, systems, and devices for status information retrieval for a memory device are described. In some examples, a memory device may include a set of status registers, each of which may be configured to store a corresponding set of status information. For example, at least some of the status registers may store status information for a corresponding portion of the memory device. The memory device may receive a command to output status information along with an indication of one or more particular status registers from which to output status information in response to the command. In response to the command and indication, the memory device may output status information from any quantity of status registers, including any type of status information, in a single stream or burst.

Abstract: A processing device in a memory system determines whether a number of pending memory commands satisfies a threshold criterion. Responsive to the number of pending memory commands satisfying the threshold criterion, the processing device initiates a first mode of operation for the system and writes, in the first mode of operation, data corresponding to at least a subset of the number of pending memory commands to a first portion of the memory device.

Abstract: Disclosed in some examples are systems, methods, memory devices, and machine readable mediums for a fast secure data destruction for NAND memory devices that renders data in a memory cell unreadable. Instead of going through all the erase phases, the memory device may remove sensitive data by performing only the pre-programming phase of the erase process. Thus, the NAND doesn't perform the second and third phases of the erase process. This is much faster and results in data that cannot be reconstructed. In some examples, because the erase pulse is not actually applied and because this is simply a programming operation, data may be rendered unreadable at a per-page level rather than a per-block level as in traditional erases.

Abstract: Disclosed in some examples are memory devices which feature customizable Single Level Cell (SLC) and Multiple Level Cell (MLC) configurations. The SLC memory cells serve as a high-speed cache providing SLC level performance with the storage capacity of a memory device with MLC memory cells. The proportion of cells configured as MLC vs the proportion that are configured as SLC storage may be configurable, and in some examples, the proportion may change during usage based upon configurable rules based upon memory device metrics. In some examples, when the device activity is below an activity threshold, the memory device may skip the SLC cache and place the data directly into the MLC storage to reduce power consumption.

Abstract: A memory device comprises a memory control unit including a processor configured to control operation of the memory array according to a first memory management protocol for memory access operations, the first memory management protocol including boundary conditions for multiple operating conditions comprising program/erase (P/E) cycles, error management operations, drive writes per day (DWPD), and power consumption; monitor operating conditions of the memory array for the P/E cycles, error management operations, DWPD, and power consumption; determine when a boundary condition for one of the multiple operating conditions is met; and in response to determining that a first boundary condition for a first monitored operating condition is met, change one or more operating conditions of the first memory management protocol to establish a second memory management protocol for the memory access operations, the second memory management protocol including a change boundary condition of a second monitored operating con

Abstract: Apparatus and methods are disclosed, including using a memory controller to partition a memory array into a first portion and a second portion, the first portion and second portion having non-overlapping logical block addressing (LBA) ranges. The memory controller assigns a first granularity of a first logical-to-physical (L2P) mapping table entry for the first portion of the memory array designated for a first usage, and a second granularity of a second L2P mapping table entry for the second portion of the memory array designated for a second usage, where the second granularity is not equal to the first granularity. The memory controller stores the first granularity and the second granularity in the memory array, and stores at least a portion of the first L2P mapping table entry and the second L2P mapping table entry in an L2P cache of the memory controller.

Abstract: Disclosed in some examples are systems, methods, memory devices, and machine readable mediums for a fast secure data destruction for NAND memory devices that renders data in a memory cell unreadable. Instead of going through all the erase phases, the memory device may remove sensitive data by performing only the pre-programming phase of the erase process. Thus, the NAND doesn't perform the second and third phases of the erase process. This is much faster and results in data that cannot be reconstructed. In some examples, because the erase pulse is not actually applied and because this is simply a programming operation, data may be rendered unreadable at a per-page level rather than a per-block level as in traditional erases.

Abstract: Disclosed in some examples are memory devices which feature customizable Single Level Cell (SLC) and Multiple Level Cell (MLC) configurations. The SLC memory cells serve as a high-speed cache providing SLC level performance with the storage capacity of a memory device with MLC memory cells. The proportion of cells configured as MLC vs the proportion that are configured as SLC storage may be configurable, and in some examples, the proportion may change during usage based upon configurable rules based upon memory device metrics. In some examples, when the device activity is below an activity threshold, the memory device may skip the SLC cache and place the data directly into the MLC storage to reduce power consumption.

Abstract: An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to receive a reset signal from a host computer system in communication with the memory system; identify, by decoding the reset signal, a host event specified by the reset signal; and process the identified host event.