Abstract: A display device includes a first substrate; a second substrate facing the first substrate; a plurality of first electrodes and a plurality of second electrodes disposed between the first substrate and the second substrate; a third electrode on an outer side of the first substrate or the second substrate, the third electrode including an organic material and a carbon nano-tube; a plurality of first conductive lines extending along a first direction; a plurality of second conductive lines extending along the first direction; a plurality of third conductive lines extending along a second direction; and a thin film transistor including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode. A sheet resistance of the third electrode may be greater than a sheet resistance of each of the plurality of first electrodes and a sheet resistance of each of the plurality of second electrodes.

Abstract: A display device includes a first substrate; a second substrate facing the first substrate; a plurality of first electrodes and a plurality of second electrodes disposed between the first substrate and the second substrate; a third electrode on an outer side of the first substrate or the second substrate, the third electrode including an organic material and a carbon nano-tube; a plurality of first conductive lines extending along a first direction; a plurality of second conductive lines extending along the first direction; a plurality of third conductive lines extending along a second direction; and a thin film transistor including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode. A sheet resistance of the third electrode may be greater than a sheet resistance of each of the plurality of first electrodes and a sheet resistance of each of the plurality of second electrodes.

Abstract: A display device includes a first substrate; a second substrate facing the first substrate; a plurality of first electrodes and a plurality of second electrodes disposed between the first substrate and the second substrate; a third electrode on an outer side of the first substrate or the second substrate, the third electrode including an organic material and a carbon nano-tube; a plurality of first conductive lines extending along a first direction; a plurality of second conductive lines extending along the first direction; a plurality of third conductive lines extending along a second direction; and a thin film transistor including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode. A sheet resistance of the third electrode may be greater than a sheet resistance of each of the plurality of first electrodes and a sheet resistance of each of the plurality of second electrodes.

Abstract: A thin film transistor (TFT) substrate comprises a TFT located on a substrate and including a gate electrode, a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer, the gate electrode and the second semiconductor layer vertically stacked, and the first and second semiconductor layers are made of polycrystalline silicon, and wherein the first and second semiconductor layers are electrically connected to each other in series and respectively include first and second channel portions, and at least one of the first and second channel portions has a bent structure in a plan view.

Abstract: A touch sensing type liquid crystal display device includes an array substrate includes a first substrate, a common electrode, a pixel electrode, and a touch sensing unit; a color filter substrate including a second substrate and facing the array substrate; an anti-static layer on an outer side of the second substrate and including an organic material and a carbon nano-tube; and a liquid crystal layer between the first substrate and an inner side of the second substrate.

Abstract: A display device includes a substrate including a plurality of sub-pixels, a plurality of thin film transistors disposed on the substrate, a planarization layer disposed on the plurality of thin film transistors, a plurality of first electrodes disposed on the planarization layer and electrically connected to the plurality of thin film transistors, a plurality of second electrodes disposed on the planarization layer and spaced apart from the plurality of first electrodes, a bank covering a part of each of the plurality of first electrodes and the plurality of second electrodes and disposed to define an emission area, a plurality of LEDs disposed in the emission area and electrically connected to the plurality of first electrodes and the plurality of second electrodes and a plurality of first conductive patterns disposed on the bank. Therefore, self-alignment of the LEDs can be easily achieved.

Abstract: A stretchable display apparatus can include a transistor substrate having a plurality of first regions corresponding to a plurality of pixel substrates disposed on a base substrate, and a second region between the plurality of first regions; a connection line disposed in the second region, the connection line electrically connecting two adjacent pixel substrates among the plurality of pixel substrates; and a reduction pattern disposed in the second region. Also, the reduction pattern can include a first reduction pattern overlapping with the connection line; and a second reduction pattern spaced apart from the first reduction pattern by a first distance and having a shape corresponding to at least a portion of the connection line.

Abstract: A touch sensing type liquid crystal display device includes an array substrate includes a first substrate, a common electrode, a pixel electrode, and a touch sensing unit; a color filter substrate including a second substrate and facing the array substrate; an anti-static layer on an outer side of the second substrate and including an organic material and a carbon nano-tube; and a liquid crystal layer between the first substrate and an inner side of the second substrate.

Abstract: A thin film transistor and a display panel having the same are provided. A display panel includes a substrate, an active layer disposed over the substrate and including a source region, a drain region, and a middle region between the source region and the drain region, and a gate electrode over the active layer and disposed overlapping with the middle region, and the active layer includes a plurality of holes disposed symmetrically with respect to the middle region. The display panel can improve its reliability owing to heat dissipation paths through the plurality of holes.

Abstract: The present disclosure relates to an organic light emitting display device and a method of fabricating the same. The organic light emitting display device comprises a first substrate including a plurality of sub-pixels; a thin film transistor in each of the plurality of sub-pixels and on the first substrate; an organic light emitting diode in each of the plurality of sub-pixels and on the first substrate; and an aging voltage supply line extending from a lower surface of the first substrate to a portion of the thin film transistor and supplying an aging voltage to the thin film transistor.

Abstract: The present disclosure discloses an array substrate and a display device including thereof. The array substrate includes a substrate, a shield metal over the substrate and a thin film transistor including an active layer with a channel region over the shield metal and a thermal gradient portion in at least one of the shield metal, the active layer and the array substrate so as to lower a temperature of a first area of the channel region than a temperature of a second area of the channel region. A cooling zone between the channel region and the shield metal is defined by the thermal gradient portion. The array substrate and a display device including the array substrate including the thermal gradient portion that defines the cooling zone between the thin film transistor and the shield metal can improves Kink effect, maintain high driving voltage, increase on current and/or improve switching properties.

Abstract: An organic light emitting display device comprises a substrate including a display area and a non-display area, a driving thin film transistor and at least one switching thin film transistor in the display area, and an organic light device in the display area, wherein the driving thin film transistor and the switching thin film transistor include respectively an oxide semiconductor layer, and wherein a surface treating layer including a pattern of protrusions is on an upper surface of the oxide semiconductor layer of the driving thin film transistor.

Abstract: A touch sensing type liquid crystal display device includes an array substrate includes a first substrate, a common electrode, a pixel electrode, and a touch sensing unit; a color filter substrate including a second substrate and facing the array substrate; an anti-static layer on an outer side of the second substrate and including an organic material and a carbon nano-tube; and a liquid crystal layer between the first substrate and an inner side of the second substrate.

Abstract: A display panel according to one embodiment of the present disclosure includes a substrate, an active electrode over the substrate and including a source region, a drain region, and a channel region, and an active upper electrode of a curved shape over the active electrode. The channel region of the active electrode and the active upper electrode may overlap each other and the channel region may have a same shape as the active upper electrode. Accordingly, a driving element included in the display panel may generate a high driving current and the degree of integration in a pixel may be improved.

Abstract: A display device according to one embodiment of the present disclosure may include a substrate including a plurality of concave portions, light emitting elements disposed at the plurality of concave portions, a first insulating layer disposed on the substrate and the light emitting element, a transistor disposed on the first insulating layer and including an active electrode and a gate electrode, a first hole included in the active electrode, a second hole included in the first insulating layer, and a connection electrode disposed in the first hole and the second hole, wherein the light emitting element may be electrically connected to the active electrode by the connection electrode.

Abstract: Embodiments of the present disclosure are related to a thin film transistor and a display device, as disposing a capacitor electrode on a gate electrode of the thin film transistor including double gate electrodes, an area where a storage capacitor occupies in a subpixel is reduced and a space availability can be improved.

Abstract: Disclosed are a backplane substrate that is capable of expressing high gradation even through a small pixel, a method of manufacturing the same, and an organic light-emitting display device using the same. Integration for ultra-high resolution is possible through structural modification.

Abstract: Discussed is a method of manufacturing a LCD device, the method including: forming a gate in each of a plurality of pixel areas on a substrate; forming a gate insulator to cover the gate; forming a semiconductor layer on the gate insulator, and forming a photoresist (PR) on the semiconductor layer; doping high-concentration impurities at the semiconductor layer by using the photoresist (PR) as a mask to form an active layer, a source, and a drain; and doping low-concentration impurities at the semiconductor layer by using the photoresist (PR) as the mask to form a lightly doped drain (LDD) between the active layer and the source and between the active layer and the drain.

Abstract: A thin film transistor (TFT) substrate comprises a TFT located on a substrate and including a gate electrode, a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer, the gate electrode and the second semiconductor layer vertically stacked, and the first and second semiconductor layers are made of polycrystalline silicon, and wherein the first and second semiconductor layers are electrically connected to each other in series and respectively include first and second channel portions, and at least one of the first and second channel portions has a bent structure in a plan view.

Abstract: A thin film transistor (TFT) substrate comprises a TFT located on a substrate and including a gate electrode, a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer, the gate electrode and the second semiconductor layer vertically stacked, and the first and second semiconductor layers are made of polycrystalline silicon, and wherein the first and second semiconductor layers are electrically connected to each other in series and respectively include first and second channel portions, and at least one of the first and second channel portions has a bent structure in a plan view.