Abstract: A touch sensing type liquid crystal display device includes an array substrate including a first substrate, a common electrode, a pixel electrode, and a touch sensing unit; a color filter substrate including a second substrate and facing the array substrate; an anti-static layer on an outer side of the second substrate, the anti-static layer having a sheet resistance of about 107 to 109 ohms per square (?/sq); and a liquid crystal layer between the first substrate and an inner side of the second substrate.

Abstract: A touch sensing type liquid crystal display device includes an array substrate includes an array substrate including a first substrate, a common electrode, a pixel electrode, and a touch sensing unit; a color filter substrate including a second substrate and facing the array substrate; an anti-static layer on an outer side of the second substrate and including an inorganic material and conductive particles; and a liquid crystal layer between the first substrate and an inner side of the second substrate.

Abstract: A touch sensing type liquid crystal display device includes an array substrate includes a first substrate, a common electrode, a pixel electrode, and a touch sensing unit; a color filter substrate including a second substrate and facing the array substrate; an anti-static layer on an outer side of the second substrate and including an organic material and a carbon nano-tube; and a liquid crystal layer between the first substrate and an inner side of the second substrate.

Abstract: A liquid crystal display device having a switching element in a pixel portion and a CMOS element in a driving portion includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a polycrystalline silicon layer on the gate insulating layer, the polycrystalline silicon layer having an active region in a central portion corresponding to the gate electrode and an ohmic contact region at side portions of the active region; an interlayer insulating layer having a set of contact holes for contacting the polycrystalline silicon layer at the side portions; and source and drain electrodes spaced apart from each other on the interlayer insulating layer, the source and drain electrodes contacting the polycrystalline silicon layer through the set of contact holes.

Abstract: A method for fabricating a polysilicon liquid crystal display device includes: forming a first amorphous silicon layer on a substrate; forming a photoresist pattern on the first amorphous silicon layer; forming a second amorphous silicon layer over the photoresist pattern and the first amorphous silicon layer; defining a channel region on the first amorphous silicon layer; crystallizing the first and second silicon layers; forming an active layer by patterning the crystallized silicon layers; forming a first insulating layer on the active layer; forming a gate electrode on the first insulating layer; forming source and drain electrodes electrically connected to the active layer; and forming a pixel electrode electrically connected to the drain electrode.

Abstract: A liquid crystal display device having a switching element in a pixel portion and a CMOS element in a driving portion includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a polycrystalline silicon layer on the gate insulating layer, the polycrystalline silicon layer having an active region in a central portion corresponding to the gate electrode and an ohmic contact region at side portions of the active region; an interlayer insulating layer having a set of contact holes for contacting the polycrystalline silicon layer at the side portions; and source and drain electrodes spaced apart from each other on the interlayer insulating layer, the source and drain electrodes contacting the polycrystalline silicon layer through the set of contact holes.

Abstract: A liquid crystal display device having a switching element in a pixel portion and a CMOS element in a driving portion includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a polycrystalline silicon layer on the gate insulating layer, the polycrystalline silicon layer having an active region in a central portion corresponding to the gate electrode and an ohmic contact region at side portions of the active region; an interlayer insulating layer having a set of contact holes for contacting the polycrystalline silicon layer at the side portions; and source and drain electrodes spaced apart from each other on the interlayer insulating layer, the source and drain electrodes contacting the polycrystalline silicon layer through the set of contact holes.

Abstract: A fabrication method of a polysilicon LCD device includes: forming a gate electrode on a substrate; forming a gate insulating layer over the gate electrode; forming a first amorphous semiconductor layer and a second amorphous semiconductor layer over the gate insulating layer; crystallizing the first and second amorphous semiconductor layers; forming source/drain electrodes on the crystallized second semiconductor layer; forming a passivation layer over the source/drain electrodes; and forming a pixel electrode connected to one of the source/drain electrodes.

Abstract: A detecting device of unevenness of a glass substrate includes a light source emitting a light; a polarizer polarizing the light; a standard cell including opposing outer surfaces, the glass substrate attached to one of the opposing outer surfaces, the polarized light passing through the standard cell and the glass substrate; an analyzer detecting and analyzing the light passing through the standard cell and the glass substrate.

Abstract: A liquid crystal display device includes a display panel including a display area and a non-display area surrounding the display area, a plurality of gate lines and data lines arranged on the display area to intersect each other, so as to define a plurality of pixel regions, a plurality of thin-film transistors formed at respective intersections of the gate lines and the data lines, a plurality of pixel electrodes formed on the respective pixel regions and connected to the thin film transistors, and at least one first common line provided between the data lines and arranged parallel to the data lines.

Abstract: A method of fabricating an array substrate structure for a liquid crystal display device includes defining a display area and a non-display area on a substrate, the display area having a pixel TFT portion and a pixel electrode area, and the non-display area having an n-type driving TFT portion and a p-type driving TFT portion; forming a first gate electrode in the display area, a second and a third gate electrodes and a first capacitor electrode in the non-display area; an amorphous silicon layer on the substrate; crystallizing the amorphous silicon layer to a polycrystalline silicon layer and doping specific portions of the polycrystalline silicon layer with plurality of impurity concentrations; and forming a first semiconductor layer in the display area, a second and a third semiconductor layers and a second capacitor electrode in the non-display area.

Abstract: A poly-silicon thin film transistor array substrate includes a gate line and a gate electrode over a substrate, a semiconductor layer having source/drain regions doped with impurity ions, a data line crossing the gate line, and source/drain electrodes connected to the source/drain regions, and a pixel electrode connected to the drain electrode, wherein the semiconductor layer is poly-silicon except for a amorphous silicon region below the gate line.

Abstract: The present invention shows that an in-plane switching mode LCD and a method for fabricating the same that substantially obviates one or more problems due to limitations and disadvantages of the related art.

Abstract: A method of fabricating an array substrate structure for a liquid crystal display device includes defining a display area and a non-display area on a substrate, the display area having a pixel TFT portion and a pixel electrode area, and the non-display area having an n-type driving TFT portion and a p-type driving TFT portion; forming a first gate electrode in the display area, a second and a third gate electrodes and a first capacitor electrode in the non-display area; an amorphous silicon layer on the substrate; crystallizing the amorphous silicon layer to a polycrystalline silicon layer and doping specific portions of the polycrystalline silicon layer with plurality of impurity concentrations; and forming a first semiconductor layer in the display area, a second and a third semiconductor layers and a second capacitor electrode in the non-display area.

Abstract: A method for fabricating a thin film transistor for an LCD device is presented that uses six mask processes. Portions of a semiconductor layer formed on a substrate are doped with first and second impurities in different regions. A conductive layer is deposited and the conductive and semiconductor layers patterned together by diffraction exposure using a diffraction pattern mask to define source and drain regions and an activate region. Ashing is performed and portions of the conductive layer removed to form the source, drain and channel. A gate insulating layer is formed on the substrate and gates are formed on the gate insulating layer. A passivation film is formed on the substrate and a pixel contact hole exposing one of the drains is etched. A pixel electrode is then deposited such that the pixel electrode is connected to the drain through the pixel contact hole.

Abstract: A method of fabricating an array substrate structure for a liquid crystal display device includes defining a display area and a non-display area on a substrate, the display area having a pixel TFT portion and a pixel electrode area, and the non-display area having an n-type driving TFT portion and a p-type driving TFT portion; forming a first gate electrode in the display area, a second and a third gate electrodes and a first capacitor electrode in the non-display area; an amorphous silicon layer on the substrate; crystallizing the amorphous silicon layer to a polycrystalline silicon layer and doping specific portions of the polycrystalline silicon layer with plurality of impurity concentrations; and forming a first semiconductor layer in the display area, a second and a third semiconductor layers and a second capacitor electrode in the non-display area.

Abstract: A method for fabricating a liquid crystal display device includes: forming a pixel electrode on a substrate; forming a first conductive layer on the pixel electrode; forming a first photoresist pattern on the conductive layer; forming a source electrode forming portion, a channel forming portion and a pixel electrode forming portion using the first photoresist pattern as a mask; forming a semiconductor layer over an entire surface of the substrate; forming an insulating layer on the semiconductor layer; forming a second conductive layer on the insulating layer; forming a second photoresist pattern on the second conductive layer; forming an active layer using the second photoresist pattern; and forming a gate electrode on the active layer.

Abstract: A polycrystalline silicon thin film transistor of a bottom gate structure is used as a switching element and a mask having transmissive, half-transmissive and blocking areas is used so that an array substrate for a liquid crystal display device having a monolithic driving circuit can be fabricated through a six-mask process.

Abstract: A poly-silicon thin film transistor array substrate includes a gate line and a gate electrode over a substrate, a semiconductor layer having source/drain regions doped with impurity ions, a data line crossing the gate line, and source/drain electrodes connected to the source/drain regions, and a pixel electrode connected to the drain electrode, wherein the semiconductor layer is poly-silicon except for a amorphous silicon region below the gate line.

Abstract: A method for fabricating a polysilicon liquid crystal display device includes: forming a first amorphous silicon layer on a substrate; forming a photoresist pattern on the first amorphous silicon layer; forming a second amorphous silicon layer over the photoresist pattern and the first amorphous silicon layer; defining a channel region on the first amorphous silicon layer; crystallizing the first and second silicon layers; forming an active layer by patterning the crystallized silicon layers; forming a first insulating layer on the active layer; forming a gate electrode on the first insulating layer; forming source and drain electrodes electrically connected to the active layer; and forming a pixel electrode electrically connected to the drain electrode.