Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

Abstract: Coated substrate comprising a surface coated with a coating comprising at least one coating layer of (TM1?xAlx)OyNz with (0.75?y)?z?(1.2?y) and 0.6>y>0, exhibiting a solid solution with B1 cubic structure, wherein x is the content of aluminum in atomic fraction if only aluminum and TM are being considered for the determination of the element composition in atomic percentage, and y is the content of oxygen in atomic fraction if only 0 and N are being considered for the determination of the element composition in atomic percentage, wherein TM is one or more transition metals and 0.05<x<0.95, wherein y correspond to a value of oxygen concentration in the TM1?xAlxOyNz coating layer that produces an increment of the thermal stability in such a manner that no precipitation of w-AlN phase is produced when the coated substrate or at least the coated surface of the coated substrate is exposed to temperatures higher than 1100° C.

Abstract: A coated tool of the present invention includes a base material; and a hard coating film on the base material. The hard coating film is a nitride or carbonitride which contains aluminum (Al) of 65 atomic % or more and 90 atomic % or less and titanium (Ti) of 10 atomic % or more and 35 atomic % or less with respect to a total amount of metal (including metalloid) elements, and have a face-centered cubic structure. In the X-ray intensity distribution of the ? axis of the positive pole figure with respect to the (111) plane of the face-centered cubic structure, the hard coating film have a maximum intensity Ia in the ? angle range of 80° to 90° and an intensity in the ? angle range of 0° to 70° is 30% or less of the Ia.

Abstract: The present invention discloses a non-reactive PVD coating process for producing an aluminium-rich AlxTi1?xN-based thin film having an aluminium content of >75 at-% based on the total amount of aluminium and titanium in the thin film, a cubic crystal structure, and a columnar microstructure, wherein ceramic targets are used as a material source for the aluminium-rich AlxTi1?xN-based thin film.

Abstract: A battery half-cell comprising a copper foil, a lithium anode layer deposited on a surface of the copper foil and a capping layer, preferably a conformal capping layer, deposited on the lithium anode layer. The lithium anode layer comprises vertical structures such as columnar structures and/or grid structures.

Abstract: This invention relates to a coating comprising at least one AlTiN-based film deposited by means of a PVD process, wherein the at least one AlTiN-based film deposited is comprising an Al-content—in relation to the Ti-content—in atomic percentage higher than 75%, and wherein the AlTiN-based film exhibits solely a crystallographic cubic phase and internal compressive stresses and this invention relates to a method involving deposition of an AlTiN-based film.

Abstract: This invention relates to a coating comprising at least one AlTiN-based film deposited by means of a PVD process, wherein the at least one AlTiN-based film deposited is comprising an Al-content—in relation to the Ti-content—in atomic percentage higher than 75%, and wherein the AlTiN-based film exhibits solely a crystallographic cubic phase and internal compressive stresses and this invention relates to a method involving deposition of an AlTiN-based film.

Abstract: A PVD coating process, preferably an arc evaporation PVD coating process for producing an aluminum-rich AlxTi1-xN-based thin film having an aluminium content of >70 at-% based on the total amount of aluminium and titanium in the thin film, a cubic crystal structure and an at least partially non-columnar microstructure with a non-columnar content of >1 vol-% based on the volume of the total microstructure, wherein ceramic targets are used as material source for the aluminium-rich AlxTi1-xN-based thin film.

Abstract: A coating layer and a method for producing thereof, wherein the coating layer includes Al, Ti and N as main components according to formula (AlaTib)xNy, where a and b are respectively the concentration of aluminium and titanium in atomic ratio considering only Al and Ti for the calculation of the element composition in the layer, whereby a+b=1 and 0?a?0.7 and 0?b?0.2, and where x is the sum of the concentration of Al and the concentration of Ti, and y is the concentration of nitrogen in atomic ratio considering only Al, Ti and N for the calculation of the element composition in the layer, whereby x+y=1 and 0.45?x?0.55, and wherein the coating layer exhibits 90% or more of fcc cubic phase, and compressive stress of 2.5 GPa or more, preferably between 2.5 GPa and 6 GPa.

Abstract: The present invention discloses a high-temperature stable ceramic coating structure including a microalloy comprising the elements Al, V and N producible by a gas phase deposition process.

Abstract: The invention relates to a method for manufacturing a solid-state battery (2) comprising the steps of preparing (100) a cathode (4), preparing (400) an anode (6), and preparing (200) a solid-state electrolyte (8) to be disposed between the cathode (4) and the anode (6), wherein the solid-state electrolyte (8) is prepared by means of a coating process, wherein the coating process comprises PVD coating.

Abstract: The present invention discloses a PVD coating process for producing a multifunctional coating structure comprising the steps of producing a HEA ceramic matrix on a substrate and the targeted introduction of a controlled precipitate structure into the HEA ceramic matrix to generate a desired specific property of the coating structure.

Abstract: A coated tool of the present invention includes a base material and a hard coating film on the base material. The hard coating film is a nitride or carbonitride containing aluminum (Al) of 65 atomic % or more 90 atomic % or less, titanium (Ti) of 10 atomic % or more 35 atomic % or less, a total of aluminum (Al) and titanium (Ti) of 85 atomic % or more, and argon (Ar) of 0.20 atomic % or less. The hard coating film satisfies a relationship of Ih×100/Is?12 when a peak intensity of a (010) plane of AlN of a hexagonal close-packed structure is Ih and a sum of peak intensities due to predetermined nine crystal planes of TiN and AlN is Is in an intensity profile obtained from a selected area diffraction pattern of a transmission electron microscope.

Abstract: Method for producing a coating comprising at least one PVD coating layer, wherein for the production of the at least one PVD coating layer materials from one or more targets are evaporated by using a PVD technique in a coating chamber comprising oxygen and nitrogen as reactive gases, wherein during deposition of the at least one PVD coating layer a multi-anion HEA-oxynitride structure is formed, which comprises a cation lattice formed of five or more elements and an anion lattice formed of two or more elements, wherein if only two elements are present in the anion lattice, they are oxygen and nitrogen.

Abstract: Coated substrate comprising a surface coated with a coating comprising at least one coating layer of (TM1-xAlx)OyN, with (0.75-y)?z?(1.2-y) and 0.6>y>0, exhibiting a solid solution with B1 cubic structure, wherein x is the content of aluminum in atomic fraction if only aluminum and TM are being considered for the determination of the element composition in atomic percentage, and y is the content of oxygen in atomic fraction if only 0 and N are being considered for the determination of the element composition in atomic percentage, wherein TM is one or more transition metals and 0.05<x<0.95, wherein y correspond to a value of oxygen concentration in the TM1-xAlxOyNz coating layer that produces an increment of the thermal stability in such a manner that no precipitation w-AlN phase is produced when the coated substrate or at least the coated surface of the coated substrate is exposed to temperatures higher than 1100° C.

Abstract: The present invention relates to a component comprising a substrate coated with a coating having a film (3,4 or 3,4,5) comprising one or more transition metals, TM, aluminium, Al, and nitrogen, N, wherein the TM and N as well as Al and N are comprised in the film forming respectively nitride compounds, wherein the transition metal nitride, TM-N, is present in the film distributed in different portions exhibiting one crystalline phase of TM-N, and the aluminium nitride, Al—N, is present in the film in different portions exhibiting one phase of Al—N, whereas the phase of the transition metal nitride is cubic, c-TMN, the phase of the aluminium nitride is wurtzite, w-AIN, and wherein the film exhibits coherent or (semi-) coherent interfaces between the c-TMN phase portions and the w-AI-N phase portions.

Abstract: The present invention discloses a non-reactive PVD coating process for producing an aluminium-rich AlxTi1?xN-based thin film having an aluminium content of >75 at-% based on the total amount of aluminium and titanium in the thin film, a cubic crystal structure, and a columnar microstructure, wherein ceramic targets are used as a material source for the aluminium-rich AlxTi1?xN-based thin film.

Abstract: The present invention discloses a high-temperature stable ceramic coating structure including a microalloy comprising the elements Al, V and N producible by a gas phase deposition process.

Abstract: The present invention discloses a PVD coating process for producing a multifunctional coating structure comprising the steps of producing a HEA ceramic matrix on a substrate and the targeted introduction of a controlled precipitate structure into the HEA ceramic matrix to generate a desired specific property of the coating structure.

Abstract: This invention relates to a coating comprising at least one AlTiN-based film deposited by means of a PVD process, wherein the at least one AlTiN-based film deposited is comprising an Al-content—in relation to the Ti-content—in atomic percentage higher than 75%, and wherein the AlTiN-based film exhibits solely a crystallographic cubic phase and internal compressive stresses and this invention relates to a method involving deposition of an AlTiN-based film.