Abstract: A wireless communication system includes: a filter; and a semiconductor chip including a signal processing integrated circuit having an amplifier, wherein a main surface of the semiconductor chip is provided with a plurality of electrode terminals along an edge portion thereof; wherein the amplifier has a transistor including a control electrode, a first electrode through which a signal is outputted, and a second electrode to which a voltage is applied; wherein the control electrode, the first electrode and the second electrode of the transistor are connected to the electrode terminals, respectively; and wherein none of wirings are arranged between the electrode terminals and placements of the control electrode, the first electrode and the second electrode, making space between the electrodes and the electrode terminals narrow.

Abstract: An IC having inputs and outputs for a plurality of frequency bands from a high frequency band to a low frequency band is protected from electrostatic damage. A high-frequency section of the IC is provided with a protection circuit including diode-connected transistors connected by multiple stages. In addition, there are applied the transistors in which elements thereof are isolated by insulator that can prevent thyristor operation.

Abstract: Into an internal circuit to operate in a high-frequency band, there is incorporated a protective circuit of a multistage connection which is constructed to include a plurality of diode-connected transistors having a low parasitic capacity and free from a malfunction even when an input signal higher than the power supply voltage is applied. Into an internal circuit to operate in a low-frequency band, there is incorporated a protective circuit which is constructed to include one diode-connected transistor. The protective circuits include two lines of protective circuit, in which the directions of electric currents are so reversed as to protect the internal circuits against positive/negative static electricities.

Abstract: A transceiver suitable for larger scale of integration employs direct conversion reception for reducing the number of filters. Also, the number of VCOs is reduced by utilizing dividers to supply a receiver and a transmitter with locally oscillated signals at an RF band. Dividers each having a fixed division ratio are used for generating locally oscillated signals for the receiver, while a divider having a switchable division ratio are used for generating the locally oscillated signal for the transmitter. In addition, a variable gain amplifier for baseband signal is provided with a DC offset voltage detector and a DC offset canceling circuit for supporting high speed data communications to accomplish fast cancellation of a DC offset by eliminating intervention of a filter within a feedback loop for offset cancellation.

Abstract: A wireless communication system includes: a filter; and a semiconductor chip including a signal processing integrated circuit having an amplifier, wherein a main surface of the semiconductor chip is provided with a plurality of electrode terminals along an edge portion thereof; wherein the amplifier has a transistor including a control electrode, a first electrode through which a signal is outputted, and a second electrode to which a voltage is applied; wherein the control electrode, the first electrode and the second electrode of the transistor are connected to the electrode terminals, respectively; and wherein none of wirings are arranged between the electrode terminals and placements of the control electrode, the first electrode and the second electrode, making space between the electrodes and the electrode terminals narrow.

Abstract: A pin layout which prevents degradation of a frequency characteristic of a low noise amplifier and a receiving mixer included in a semiconductor integrated circuit for dual-band transmission/reception wherein the circuit of the low noise amplifier is provided at a position where the distance from the end of a pin outside the package of the low noise amplifier to the pad is the shortest; ground pins of two low noise amplifiers and the high frequency signal pins are arranged respectively so as not to be adjacent to each other; the power source and ground pin of the low noise amplifier, and the power source and ground pin of the bias circuit are respectively separated; and high frequency signal wires do not intersect each other.

Abstract: A transceiver suitable for larger scale of integration employs direct conversion reception for reducing the number of filters. Also, the number of VCOs is reduced by utilizing dividers to supply a receiver and a transmitter with locally oscillated signals at an RF band. Dividers each having a fixed division ratio are used for generating locally oscillated signals for the receiver, while a divider having a switchable division ratio are used for generating the locally oscillated signal for the transmitter. In addition, a variable gain amplifier for baseband signal is provided with a DC offset voltage detector and a DC offset canceling circuit for supporting high speed data communications to accomplish fast cancellation of a DC offset by eliminating intervention of a filter within a feedback loop for offset cancellation.

Abstract: Into an internal circuit to operate in a high-frequency band, there is incorporated a protective circuit of a multistage connection which is constructed to include a plurality of diode-connected transistors having a low parasitic capacity and free from a malfunction even when an input signal higher than the power supply voltage is applied. Into an internal circuit to operate in a low-frequency band, there is incorporated a protective circuit which is constructed to include one diode-connected transistor. The protective circuits include two lines of protective circuit, in which the directions of electric currents are so reversed as to protect the internal circuits against positive/negative static electricities.

Abstract: Into an internal circuit to operate in a high-frequency band, there is incorporated a protective circuit of a multistage connection which is constructed to include a plurality of diode-connected transistors having a low parasitic capacity and free from a malfunction even when an input signal higher than the power supply voltage is applied. Into an internal circuit to operate in a low-frequency band, there is incorporated a protective circuit which is constructed to include one diode-connected transistor. The protective circuits include two lines of protective circuit, in which the directions of electric currents are so reversed as to protect the internal circuits against positive/negative static electricities.

Abstract: A wireless communication system includes: a filter; and a semiconductor chip including a signal processing integrated circuit having an amplifier, wherein a main surface of the semiconductor chip is provided with a plurality of electrode terminals along an edge portion thereof; wherein the amplifier has a transistor including a control electrode, a first electrode through which a signal is outputted, and a second electrode to which a voltage is applied; wherein the control electrode, the first electrode and the second electrode of the transistor are connected to the electrode terminals, respectively; and wherein none of wirings are arranged between the electrode terminals and placements of the control electrode, the first electrode and the second electrode, making space between the electrodes and the electrode terminals narrow.

Abstract: A wireless communication system includes: a filter; and a semiconductor chip including a signal processing integrated circuit having an amplifier, wherein a main surface of the semiconductor chip is provided with a plurality of electrode terminals along an edge portion thereof; wherein the amplifier has a transistor including a control electrode, a first electrode through which a signal is outputted, and a second electrode to which a voltage is applied; wherein the control electrode, the first electrode and the second electrode of the transistor are connected to the electrode terminals, respectively; and wherein none of wirings are arranged between the electrode terminals and placements of the control electrode, the first electrode and the second electrode, making space between the electrodes and the electrode terminals narrow.

Abstract: A wireless communication system includes: a filter; and a semiconductor chip including a signal processing integrated circuit having an amplifier, wherein a main surface of the semiconductor chip is provided with a plurality of electrode terminals along an edge portion thereof; wherein the amplifier has a transistor including a control electrode, a first electrode through which a signal is outputted, and a second electrode to which a voltage is applied; wherein the control electrode, the first electrode and the second electrode of the transistor are connected to the electrode terminals, respectively; and wherein none of wirings are arranged between the electrode terminals and placements of the control electrode, the first electrode and the second electrode, making space between the electrodes and the electrode terminals narrow.

Abstract: When one base station to which a terminal is to connect is determined from a plurality of base stations in a wireless communication system, the best base station is selected according to the communication quality or the content of communication services. In the wireless communication system, the plurality of base stations are classified into a plurality of groups. Indexes of communication quality between the base stations and the terminal are obtained and, for each group, the characterizing quantities of the indexes of communication quality are calculated. The base station group with which the terminal is to communicate is specified based on the characterizing quantities. One of the base stations in the specified group is determined as a communication destination base station.

Abstract: A wireless communication system includes: a filter; and a semiconductor chip including a signal processing integrated circuit having an amplifier, wherein a main surface of the semiconductor chip is provided with a plurality of electrode terminals along an edge portion thereof; wherein the amplifier has a transistor including a control electrode, a first electrode through which a signal is outputted, and a second electrode to which a voltage is applied; wherein the control electrode, the first electrode and the second electrode of the transistor are connected to the electrode terminals, respectively; and wherein none of wirings are arranged between the electrode terminals and placements of the control electrode, the first electrode and the second electrode, making space between the electrodes and the electrode terminals narrow.

Abstract: In a position detection system utilizing a WLAN supporting multiple data transfer rates, it is possible to reduce the number of required installed base stations, so system construction costs can be lowered. In a wireless station, a transmitted signal is judged at the time of transmission, and in case it is normal user data, the signal is transmitted by setting optimal transmission parameters for which a high communication throughput with wireless communication is obtained, and in case it is a position detection signal, the aforementioned signal is transmitted by setting transmission parameters for which the service range is increased. As a transmission parameter for which the service range is increased, a low data transfer rate or a long preamble length is used.

Abstract: An IC having inputs and outputs for a plurality of frequency bands from a high frequency band to a low frequency band is protected from electrostatic damage. A high-frequency section of the IC is provided with a protection circuit including diode-connected transistors connected by multiple stages. In addition, there are applied the transistors in which elements thereof are isolated by insulator that can prevent thyristor operation.

Abstract: Into an internal circuit to operate in a high-frequency band, there is incorporated a protective circuit of a multistage connection which is constructed to include a plurality of diode-connected transistors having a low parasitic capacity and free from a malfunction even when an input signal higher than the power supply voltage is applied. Into an internal circuit to operate in a low-frequency band, there is incorporated a protective circuit which is constructed to include one diode-connected transistor. The protective circuits include two lines of protective circuit, in which the directions of electric currents are so reversed as to protect the internal circuits against positive/negative static electricities.

Abstract: A wireless communication system includes: a filter; and a semiconductor chip including a signal processing integrated circuit having an amplifier, wherein a main surface of the semiconductor chip is provided with a plurality of electrode terminals along an edge portion thereof; wherein the amplifier has a transistor including a control electrode, a first electrode through which a signal is outputted, and a second electrode to which a voltage is applied; wherein the control electrode, the first electrode and the second electrode of the transistor are connected to the electrode terminals, respectively; and wherein none of wirings are arranged between the electrode terminals and placements of the control electrode, the first electrode and the second electrode, making space between the electrodes and the electrode terminals narrow.

Abstract: An IC having inputs and outputs for a plurality of frequency bands from a high frequency band to a low frequency band is protected from electrostatic damage. A high-frequency section of the IC is provided with a protection circuit including diode-connected transistors connected by multiple stages. In addition, there are applied the transistors in which elements thereof are isolated by insulator that can prevent thyristor operation.

Abstract: Into an internal circuit to operate in a high-frequency band, there is incorporated a protective circuit of a multistage connection which is constructed to include a plurality of diode-connected transistors having a low parasitic capacity and free from a malfunction even when an input signal higher than the power supply voltage is applied. Into an internal circuit to operate in a low-frequency band, there is incorporated a protective circuit which is constructed to include one diode-connected transistor. The protective circuits include two lines of protective circuit, in which the directions of electric currents are so reversed as to protect the internal circuits against positive/negative static electricities.