Abstract: A thin film transistor substrate includes a substrate, a first metal layer disposed on the substrate, a second metal layer disposed on the first metal layer, a semiconductor disposed between the substrate and the first metal layer, and a first insulating layer disposed between the first metal layer and the second metal layer. The first metal layer includes a gate pattern, the second metal layer includes a scan line pattern, the semiconductor includes an active region, and the first insulating layer includes a first opening. The gate pattern overlaps the active region, and the scan line pattern of the second metal layer is electrically connected to the gate pattern of the first metal layer through the first opening in the first insulating layer.

Abstract: A display and a backlight compensation method thereof are provided, wherein the display includes a backlight unit and a driving unit, and the backlight compensation method includes: providing a gamma value of the display; performing local dimming of the backlight unit according to the gamma value; obtaining an area peak luminance of each area in the backlight unit; obtaining a windows size of the backlight unit and a corresponding luminance dependency of windows size; obtaining, by the driving unit, a first display luminance corresponding to each area in the backlight unit according to a product of the area peak luminance of each area and the luminance dependency of windows size; and performing luminance compensation in each area of the backlight unit according to the first display luminance. A backlight compensation method that maintains optical quality is achieved, which can maintain brightness and gamma values under different windows sizes.

Abstract: An electronic device includes a substrate, an electrical component, a signal line, a fan-out line and a switch. The substrate includes an active area and a peripheral area. The electrical component is disposed on the substrate and in the active area. The signal line is disposed on the substrate and in the active area, and the signal line is coupled to the electrical component. The fan-out line is disposed on the substrate and in the peripheral area. The switch is disposed area and the peripheral area, wherein the switch is coupled between the signal line and the fan-out line. The switch is controlled to transmit a signal from the fan-out line to the signal line during the switch is turned on, and the electrical component is operated in different refreshing frequencies according to the signal.

Abstract: A semiconductor device includes a gate structure on a substrate, a source/drain region adjacent to the gate structure, an interlayer dielectric (ILD) layer around the gate structure, a contact plug in the ILD layer and adjacent to the gate structure, an air gap around the contact plug, a barrier layer on and sealing the air gap, a metal layer on the barrier layer, a stop layer adjacent to the barrier layer and on the ILD layer, and an inter-metal dielectric (IMD) layer on the ILD layer. Preferably, bottom surfaces of the barrier layer and the stop layer are coplanar and top surfaces of the IMD layer and the barrier layer are coplanar.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer adjacent to the gate structure, performing a plasma doping process to form a doped layer in the ILD layer and a source/drain region adjacent to the gate structure, forming a conductive layer in the contact hole, planarizing the conductive layer to form a contact plug, removing the doped layer to form an air gap adjacent to the contact plug, and then forming a stop layer on the ILD layer and the contact plug.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer adjacent to the gate structure, performing a plasma doping process to form a doped layer in the ILD layer and a source/drain region adjacent to the gate structure, forming a conductive layer in the contact hole, planarizing the conductive layer to form a contact plug, removing the doped layer to form an air gap adjacent to the contact plug, and then forming a stop layer on the ILD layer and the contact plug.

Abstract: Aspects of this disclosure relate to a tunable filter with tunable rejection. The tunable filter includes mutually coupled inductors and a tunable impedance circuit electrically connected to at least one of the mutually coupled inductors. The tunable impedance circuit is configured to adjust at least two notches in a frequency response of the tunable filter by changing a state of a switch. The tunable filter can filter a radio frequency signal. Related methods, radio frequency systems, radio frequency modules, and wireless communication devices are also disclosed.

Abstract: A predictive maintenance system and an implementation method thereof are provided. The system includes a mainboard, a sensing interface card coupled to the mainboard, and a predictive maintenance program. The mainboard includes a storage for storing a computer program and one or more processors for executing the computer program. The sensing interface card includes a sensor connection port that is configured to connect external device sensors with different connection interfaces and to receive detection values detected by the external device sensors, and a microprocessor for receiving the detection values to generate a failure prediction analysis result. The predictive maintenance program stored in the storage is executed by the processors.

Abstract: A metal interconnect structure includes a first metal interconnection in an inter-metal dielectric (IMD) layer on a substrate, a second metal interconnection on the first metal interconnection, and a cap layer between the first metal interconnection and the second metal interconnection. Preferably, a top surface of the first metal interconnection is even with a top surface of the IMD layer and the cap layer is made of conductive material.

Abstract: An image color display restoration system, method and display system include a first auxiliary light source; a camera device connected to the first auxiliary light source to form an imaging environment, acquiring a first image and imaging parameter values in the imaging environment, wherein the first image includes an image of a colorimetric component; a display device located in an ambient light source area having a first illumination value, and receiving and displaying a second image, wherein the display device has display parameter values; a second auxiliary light source matched and arranged corresponding to the display device and forming a light source control area, and having a second illumination value; a cloud platform receiving the first image, the imaging parameter values and the display parameter values, and after correcting the first image according to the imaging parameter values and the display parameter values, outputting the second image.

Abstract: The present application provides a vehicle thermal management system and a transportation refrigeration vehicle. The vehicle thermal management system comprises: an air conditioning system, configured with a compressor, a first three-way valve, a first outdoor heat exchanger, an indoor heat exchanger, a regulating valve, an intermediate heat exchanger, and a first throttling element, a second throttling element, and a third throttling element connected through pipelines, and a battery cooling system, configured with a second outdoor heat exchanger, a battery cooling device, and a second three-way valve connected through pipelines.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer adjacent to the gate structure, performing a plasma doping process to form a doped layer in the ILD layer and a source/drain region adjacent to the gate structure, forming a conductive layer in the contact hole, planarizing the conductive layer to form a contact plug, removing the doped layer to form an air gap adjacent to the contact plug, and then forming a stop layer on the ILD layer and the contact plug.

Abstract: A smoke detector comprises a light source, an optical sensor, a first, and a second processing circuit. The optical sensor senses optical data and comprises; a first oscillator, generating a first oscillating signal; and a second oscillator, generating a second oscillating signal. The first processing circuit generates a first command to instruct the first oscillator to oscillate for a first expected oscillating time, and acquires a first real oscillating time, wherein the first processing circuit further computes a time relation between the first expected oscillating time and the first real oscillating time. The first processing circuit generates a second command to instruct the second oscillator to oscillate for a second expected oscillating time according to the time relation. The second processing circuit controls the smoke detector to generate a first alarm according to the time relation. The optical sensor can also be applied to other electronic devices.

Abstract: An electronic device includes a substrate, an electrical component, a plurality of data lines, a plurality of fan-out lines and a multiplexer. The substrate includes an active area and a fan-out area. The electrical component is disposed in the active area. The data lines are disposed in the active area, and one of the data lines is coupled to the electrical component. The fan-out lines are disposed in the fan-out area. The multiplexer is disposed between the active area and the fan-out area, and is coupled to the one of the data lines and one of the fan-out lines. The electronic device has various refreshing frequencies and is configured to use the multiplexer to control the one of the data lines to receive a data signal through the one of the fan-out lines, and the electrical component displays a corresponding gray-level according to the data signal.

Abstract: Aspects of this disclosure relate to a tunable filter with tunable rejection. The tunable filter includes mutually coupled inductors and a tunable impedance circuit electrically connected to at least one of the mutually coupled inductors. The tunable impedance circuit is configured to adjust at least two notches in a frequency response of the tunable filter by changing a state of a switch. The tunable filter can filter a radio frequency signal. Related methods, radio frequency systems, radio frequency modules, and wireless communication devices are also disclosed.

Abstract: In one or more embodiments, the present invention is directed to an electrically conductive polymer composition comprising a conductive metal filler material comprising a plurality of metal particles and one or more carbon-based filler material substantially homogenously dispersed throughout a polymer matrix, wherein the aspect ratio of the one or more carbon-based filler material is at least ten times greater than the aspect ratio of the conductive metal filler material comprising a plurality of metal particles. In one or more embodiment, the carbon-based filler material will comprise at least one of carbon nanotubes, multi-walled carbon nanotubes and edge-functionalized graphene.

Abstract: A metal interconnect structure includes a first metal interconnection in an inter-metal dielectric (IMD) layer on a substrate, a second metal interconnection on the first metal interconnection, and a cap layer between the first metal interconnection and the second metal interconnection. Preferably, a top surface of the first metal interconnection is even with a top surface of the IMD layer and the cap layer is made of conductive material.

Abstract: There is provided a smoke detector including a first light source, a second light source surface, a light sensor and a processor. The light sensor receives reflected light when the first light source and the second light source emit light, and generates a first detection signal corresponding to light emission of the first light source and a second detection signal corresponding to light emission of the second light source. The processor distinguishes smoke and floating particles according to a similarity between the first detection signal and the second detection signal.

Abstract: A method of fabricating magnetoresistive random access memory, including providing a substrate, forming a bottom electrode layer, a magnetic tunnel junction stack, a top electrode layer and a hard mask layer sequentially on the substrate, wherein a material of the top electrode layer is titanium nitride, a material of the hard mask layer is tantalum or tantalum nitride, and a percentage of nitrogen in the titanium nitride gradually decreases from a top surface of top electrode layer to a bottom surface of top electrode layer, and patterning the bottom electrode layer, the magnetic tunnel junction stack, the top electrode layer and the hard mask layer into multiple magnetoresistive random access memory cells.

Abstract: Disclosed is a method for detecting motor parameters, comprising: injecting a first direct current signal; receiving a first d-q axis feedback current corresponding to the first direct current signal and a first d-q axis voltage output by a current regulation module; injecting a second direct current signal different from the first direct current signal; receiving a second d-q axis feedback current corresponding to the second direct current signal and a second d-q axis voltage output by the current regulation module; and determining motor parameters based on the first d-q axis feedback current, the first d-q axis voltage, the second d-q axis feedback current and the second d-q axis voltage. Also disclosed is an apparatus for detecting motor parameters, a computer program product and an air conditioner compressor system.