Abstract: A lateral diffusion metal-oxide semiconductor (LDMOS) device includes a first gate structure and a second gate structure extending along a first direction on a substrate, a first source region extending along the first direction on one side of the first gate structure, a second source region extending along the first direction on one side of the second gate structure, a drain region extending along the first direction between the first gate structure and the second gate structure, a guard ring surrounding the first gate structure and the second gate structure, and a shallow trench isolation (STI) surrounding the guard ring.

Abstract: A lateral diffusion metal-oxide semiconductor (LDMOS) device includes a first gate structure and a second gate structure extending along a first direction on a substrate, a first source region extending along the first direction on one side of the first gate structure, a second source region extending along the first direction on one side of the second gate structure, a drain region extending along the first direction between the first gate structure and the second gate structure, a guard ring surrounding the first gate structure and the second gate structure, and a shallow trench isolation (STI) surrounding the guard ring.

Abstract: A light source module includes a light guide plate and a light source. The light guide plate includes a first light guide layer, a second light guide layer, and a translucent adhesive layer. The second light guide layer is bonded to the first light guide layer through the translucent adhesive layer. An absolute value of a refractive index difference between the translucent adhesive layer and any one of the first light guide layer and the second light guide layer is less than or equal to 0.02. The light source is disposed adjacent to a side surface of the light guide plate.

Abstract: A lateral diffusion metal-oxide semiconductor (LDMOS) device includes a first gate structure and a second gate structure extending along a first direction on a substrate, a first source region extending along the first direction on one side of the first gate structure, a second source region extending along the first direction on one side of the second gate structure, a drain region extending along the first direction between the first gate structure and the second gate structure, a guard ring surrounding the first gate structure and the second gate structure, and a shallow trench isolation (STI) surrounding the guard ring.

Abstract: A 3D chip packaging structure with a memory device. The memory device includes a memory wafer layer and a connecting layer. The memory wafer layer includes at least one memory partition. The connecting layer is disposed on one side of the memory wafer layer. The connecting layer includes at least one connecting quiet zone and at least one connecting area. The at least one connecting quiet zone and the at least one connecting area are corresponding to the at least one memory partition. The at least one connecting quiet zone is adjacent to the at least one connecting area. The area of the at least one connecting quiet zone is equal to or larger than the at least one connecting area.

Abstract: The invention provides a metal oxide semiconductor (MOS) capacitor structure, which includes a counter-doping region in the channel region directly below the gate. Between the deep ion well and the counter-doping region is a semiconductor region. The doping concentration of the semiconductor region is lower than that of the deep ion well. The P-type well ion implantation processes in the active region of the device can be omitted, so the production cost is lower, and the dosage of the counter-doping region can be reduced, which improves the time-dependent dielectric collapse (TDDB) issue.

Abstract: A display device including a display panel, a flexible light guide having a Young's modulus of about 10 to 1000 MPa, a light emitting element, and an optical layer is provided. The flexible light guide includes a light source portion, a light entrance portion, and a middle portion. The middle portion is bent, so that the light source portion and the light entrance portion are disposed at the opposite sides of the display panel. The light emitting element is disposed adjacent to the light entrance portion of the flexible light guide with a light emitting surface facing the side edge of the flexible light guide. The optical layer is in contact with a surface of the light source portion and a difference of refractive index between the flexible light guide and the optical layer is in a range of 0.1 to 0.2.

Abstract: A display device including a display panel and a light source module is provided. The light source module includes a flexible light guide and a light emitting element. The flexible light guide has a light exiting portion and a light incident portion. The flexible light guide is bent so that the display panel is located between the light exiting portion and the light incident portion. The light incident portion has a light incident surface at a terminal. A thickness of the light incident portion is gradually increased toward the light incident surface. The light emitting element is disposed to face toward the light incident surface.

Abstract: A quick release mechanism includes a fixed component, at least one engagement component and a disengagement component. The fixed component has at least one slide channel and at least one first opening, and the at least one first opening communicates with one side of the at least one slide channel. The at least one engagement component includes a slidable portion and an engagement portion. The slidable portion is slidably located in the at least one slide channel, and the engagement portion is connected to the slidable portion and configured to penetrate through the at least one first opening. The disengagement component is removably disposed on the fixed component so as to move the engagement portion of the at least one engagement component to be located closer to or farther away from another side of the at least one slide channel.

Abstract: A display module includes a front light module and a reflective display panel. The front light module comprises a light source and a light guide plate. The light source comprises a plurality of major light sources comprising a first color temperature and a plurality of auxiliary light sources comprising a second color temperature. The first color temperature is different from the second color temperature. The light guide plate comprises a front surface comprising a light mixing area and an active area. The light mixing area comprises a light entrance surface. The light source is disposed adjacent to the light entrance surface. The reflective display panel is disposed on a back surface of the light guide plate. The light mixing area of the light guide plate is foldable. When the light mixing area is folded, the light mixing area is on the back surface of the light guide plate.

Abstract: A display device includes a base layer, a touch sensing layer, a light guide module and a display panel. The touch sensing layer is disposed on the base layer. The light guide module is disposed on the touch sensing layer. The touch sensing layer is located between the light guide module and the display panel, and the touch sensing layer and one of the light guide module and the display panel have no adhesive material therebetween.

Abstract: A display device including a display panel and a light source module is provided. The light source module includes a flexible light guide and a light emitting element. The flexible light guide has a light exiting portion and a light incident portion. The flexible light guide is bent so that the display panel is located between the light exiting portion and the light incident portion. The light incident portion has a light incident surface at a terminal. A thickness of the light incident portion is gradually increased toward the light incident surface. The light emitting element is disposed to face toward the light incident surface.

Abstract: A display device includes a base layer, a touch sensing layer, a light guide module and a display panel. The touch sensing layer is disposed on the base layer. The light guide module is disposed on the touch sensing layer. The touch sensing layer is located between the light guide module and the display panel, and the touch sensing layer and one of the light guide module and the display panel have no adhesive material therebetween.

Abstract: A lateral diffusion metal-oxide semiconductor (LDMOS) device includes a first gate structure and a second gate structure extending along a first direction on a substrate, a first source region extending along the first direction on one side of the first gate structure, a second source region extending along the first direction on one side of the second gate structure, a drain region extending along the first direction between the first gate structure and the second gate structure, a guard ring surrounding the first gate structure and the second gate structure, and a shallow trench isolation (STI) surrounding the guard ring.

Abstract: A lateral diffusion metal-oxide semiconductor (LDMOS) device includes a first gate structure and a second gate structure extending along a first direction on a substrate, a first source region extending along the first direction on one side of the first gate structure, a second source region extending along the first direction on one side of the second gate structure, a drain region extending along the first direction between the first gate structure and the second gate structure, a guard ring surrounding the first gate structure and the second gate structure, and a shallow trench isolation (STI) surrounding the guard ring.

Abstract: A lateral diffusion metal-oxide semiconductor (LDMOS) device includes a first gate structure and a second gate structure extending along a first direction on a substrate, a first source region extending along the first direction on one side of the first gate structure, a second source region extending along the first direction on one side of the second gate structure, a drain region extending along the first direction between the first gate structure and the second gate structure, a guard ring surrounding the first gate structure and the second gate structure, and a shallow trench isolation (STI) surrounding the guard ring.

Abstract: A front light module includes a foldable light guide plate, a light source, an upper insulating layer, an upper optical adhesive layer, a lower insulating layer, and a lower optical adhesive layer. The top surface and the bottom surface of the foldable light guide plate adjoin the light incident surface of the foldable light guide plate. The light source faces toward the light incident surface. The upper insulating layer is located on the top surface. The upper optical adhesive layer is located on the upper insulating layer, and a storage modulus of the upper optical adhesive layer is less than a storage modulus of the upper insulating layer. The lower optical adhesive layer is located on a bottom surface of the lower insulating layer, and a storage modulus of the lower optical adhesive layer is less than a storage modulus of the lower insulating layer.

Abstract: A high voltage semiconductor device includes a semiconductor substrate, first and second deep well regions, and first and second well regions disposed in the semiconductor substrate. The second deep well region is located above the first deep well region. The first well region is located above the first deep well region. The second well region is located above the second deep well region. A conductivity type of the second deep well region is complementary to that of the first deep well region. A conductivity type of the second well region is complementary to that of the first well region and the second deep well region. A length of the second deep well region is greater than or equal to that of the second well region and less than that of the first deep well region. The first well region is connected with the first deep well region.

Abstract: A front light module includes a foldable light guide plate, a light source, an upper insulating layer, an upper optical adhesive layer, a lower insulating layer, and a lower optical adhesive layer. The top surface and the bottom surface of the foldable light guide plate adjoin the light incident surface of the foldable light guide plate. The light source faces toward the light incident surface. The upper insulating layer is located on the top surface. The upper optical adhesive layer is located on the upper insulating layer, and a storage modulus of the upper optical adhesive layer is less than a storage modulus of the upper insulating layer. The lower optical adhesive layer is located on a bottom surface of the lower insulating layer, and a storage modulus of the lower optical adhesive layer is less than a storage modulus of the lower insulating layer.

Abstract: A high voltage semiconductor device includes a semiconductor substrate, first and second deep well regions, and first and second well regions disposed in the semiconductor substrate. The second deep well region is located above the first deep well region. The first well region is located above the first deep well region. The second well region is located above the second deep well region. A conductivity type of the second deep well region is complementary to that of the first deep well region. A conductivity type of the second well region is complementary to that of the first well region and the second deep well region. A length of the second deep well region is greater than or equal to that of the second well region and less than that of the first deep well region. The first well region is connected with the first deep well region.