Patents by Inventor Kun-Ju Li
Kun-Ju Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12224108Abstract: A coil module is provided, including a second coil mechanism. The second coil mechanism includes a third coil assembly and a second base corresponding to the third coil assembly. The second base has a positioning assembly corresponding to a first coil mechanism.Type: GrantFiled: October 5, 2023Date of Patent: February 11, 2025Assignee: TDK TAIWAN CORP.Inventors: Feng-Lung Chien, Tsang-Feng Wu, Yuan Han, Tzu-Chieh Kao, Chien-Hung Lin, Kuang-Lun Lee, Hsiang-Hui Hsu, Shu-Yi Tsui, Kuo-Jui Lee, Kun-Ying Lee, Mao-Chun Chen, Tai-Hsien Yu, Wei-Yu Chen, Yi-Ju Li, Kuei-Yuan Chang, Wei-Chun Li, Ni-Ni Lai, Sheng-Hao Luo, Heng-Sheng Peng, Yueh-Hui Kuan, Hsiu-Chen Lin, Yan-Bing Zhou, Chris T. Burket
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Publication number: 20250008743Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a first ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ, a passivation layer on the first ULK dielectric layer, and a second ULK dielectric layer on the passivation layer.Type: ApplicationFiled: September 15, 2024Publication date: January 2, 2025Applicant: UNITED MICROELECTRONICS CORP.Inventors: Kun-Ju Li, Tai-Cheng Hou, Hsin-Jung Liu, Fu-Yu Tsai, Bin-Siang Tsai, Chau-Chung Hou, Yu-Lung Shih, Ang Chan, Chih-Yueh Li, Chun-Tsen Lu
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Patent number: 12127413Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a first ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ, a passivation layer on the first ULK dielectric layer, and a second ULK dielectric layer on the passivation layer.Type: GrantFiled: February 23, 2023Date of Patent: October 22, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kun-Ju Li, Tai-Cheng Hou, Hsin-Jung Liu, Fu-Yu Tsai, Bin-Siang Tsai, Chau-Chung Hou, Yu-Lung Shih, Ang Chan, Chih-Yueh Li, Chun-Tsen Lu
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Publication number: 20240170299Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.Type: ApplicationFiled: January 30, 2024Publication date: May 23, 2024Inventors: KUN-JU LI, ANG CHAN, HSIN-JUNG LIU, WEI-XIN GAO, JHIH-YUAN CHEN, CHUN-HAN CHEN, ZONG-SIAN WU, CHAU-CHUNG HOU, I-MING LAI, FU-SHOU TSAI
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Patent number: 11923205Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.Type: GrantFiled: December 17, 2021Date of Patent: March 5, 2024Assignee: UNITED MICROELECTRONICS CORPORATIONInventors: Kun-Ju Li, Ang Chan, Hsin-Jung Liu, Wei-Xin Gao, Jhih-Yuan Chen, Chun-Han Chen, Zong-Sian Wu, Chau-Chung Hou, I-Ming Lai, Fu-Shou Tsai
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Publication number: 20240071988Abstract: A method for manufacturing a semiconductor structure is provided. The method includes: providing a substrate and a dielectric layer on the substrate; forming a hole in the dielectric layer; forming an initial barrier material layer and a conductive layer on an upper surface of the dielectric layer and in the hole; removing part of the initial barrier material layer and part of the conductive layer to form a barrier material layer and a via element in the hole respectively and expose the upper surface of the dielectric layer. An upper surface of the barrier material layer is higher than the upper surface of the dielectric layer.Type: ApplicationFiled: October 11, 2022Publication date: February 29, 2024Inventors: Kun-Ju LI, Hsin-Jung LIU, Wei-Xin GAO, Jhih-Yuan CHEN, Ang CHAN, Chau-Chung HOU
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Publication number: 20240055401Abstract: A semiconductor assembly and a method for manufacturing the same are provided. The semiconductor assembly includes a first substrate, a first well in the first substrate and having a first doping type, a second substrate, a second well in the second substrate and having a second doping type, a first dielectric layer between the first substrate and the second substrate, and a second dielectric layer between the first substrate and the second substrate. The first doping type is different from the second doping type. The second dielectric layer is bonded to the first dielectric layer. The first well overlaps with the second well in a vertical direction.Type: ApplicationFiled: September 8, 2022Publication date: February 15, 2024Inventors: Kun-Ju LI, Hsin-Jung LIU, Zong-Sian WU, Wei-Xin GAO, Jhih-Yuan CHEN, Ang CHAN, Chau-Chung HOU, Hsiang-Chi CHIEN, I-Ming LAI
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Publication number: 20230403946Abstract: A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.Type: ApplicationFiled: August 28, 2023Publication date: December 14, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Laio, Yu-Tsung Lai, Wei-Hao Huang
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Publication number: 20230354715Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a passivation layer on the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on the passivation layer. Preferably, a top surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the passivation layer directly on top of the first MTJ.Type: ApplicationFiled: June 27, 2023Publication date: November 2, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Yu-Tsung Lai, Wei-Hao Huang
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Publication number: 20230320229Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and form a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.Type: ApplicationFiled: May 10, 2023Publication date: October 5, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Yu-Tsung Lai, Wei-Hao Huang
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Patent number: 11778922Abstract: A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.Type: GrantFiled: November 22, 2021Date of Patent: October 3, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Yu-Tsung Lai, Wei-Hao Huang
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Patent number: 11737370Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a passivation layer on the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on the passivation layer. Preferably, a top surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the passivation layer directly on top of the first MTJ.Type: GrantFiled: January 4, 2021Date of Patent: August 22, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Yu-Tsung Lai, Wei-Hao Huang
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Patent number: 11706993Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.Type: GrantFiled: December 27, 2020Date of Patent: July 18, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Yu-Tsung Lai, Wei-Hao Huang
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Publication number: 20230197467Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.Type: ApplicationFiled: December 17, 2021Publication date: June 22, 2023Inventors: KUN-JU LI, Ang Chan, HSIN-JUNG LIU, WEI-XIN GAO, Jhih-Yuan Chen, Chun-Han Chen, Zong-Sian Wu, Chau-Chung Hou, I-MING LAI, FU-SHOU TSAI
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Publication number: 20230200088Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a first ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ, a passivation layer on the first ULK dielectric layer, and a second ULK dielectric layer on the passivation layer.Type: ApplicationFiled: February 23, 2023Publication date: June 22, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Kun-Ju Li, Tai-Cheng Hou, Hsin-Jung Liu, Fu-Yu Tsai, Bin-Siang Tsai, Chau-Chung Hou, Yu-Lung Shih, Ang Chan, Chih-Yueh Li, Chun-Tsen Lu
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Patent number: 11621296Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate; forming a first top electrode on the first MTJ and a second top electrode on the second MTJ; forming a first ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ; forming a passivation layer on the first ULK dielectric layer, wherein a bottom surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the first MTJ; and forming a second ULK dielectric layer on the passivation layer.Type: GrantFiled: April 6, 2021Date of Patent: April 4, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kun-Ju Li, Tai-Cheng Hou, Hsin-Jung Liu, Fu-Yu Tsai, Bin-Siang Tsai, Chau-Chung Hou, Yu-Lung Shih, Ang Chan, Chih-Yueh Li, Chun-Tsen Lu
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Publication number: 20230051000Abstract: A semiconductor structure includes a first dielectric layer on a substrate, a conductive structure disposed in the first dielectric layer and including a terminal portion and an extending portion connecting the terminal portion and extending away from the terminal portion, a second dielectric layer disposed on the first dielectric layer, a conductive via through the second dielectric layer and directly contacting the extending portion, and a dummy via through the second dielectric layer and directly contacting the terminal portion. In a cross-sectional view, a width of the dummy via is smaller than 50% of a width of the conductive via.Type: ApplicationFiled: October 5, 2021Publication date: February 16, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ang Chan, Hsin-Jung Liu, Kun-Ju Li, Chau-Chung Hou, Fu-Shou Tsai, Yu-Lung Shih, Jhih-Yuan Chen, Chun-Han Chen, Wei-Xin Gao, Shih-Ming Lin
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Patent number: 11482666Abstract: A semiconductor substrate is provided. The semiconductor substrate has thereon a first dielectric layer, at least one conductive pattern disposed in the first dielectric layer, and a second dielectric layer covering the first dielectric layer and the at least one conductive pattern. A via opening is formed in the second dielectric layer. The via opening exposes a portion of the at least one conductive pattern. A polish stop layer is conformally deposited on the second dielectric layer and within the via opening. A barrier layer is conformally deposited on the polish stop layer. A tungsten layer is conformally deposited on the barrier layer. The tungsten layer and the barrier layer are polished until the polish stop layer on the second dielectric layer is exposed, thereby forming a via plug in the via opening. A bottom electrode layer is conformally deposited on the second dielectric layer and the via plug.Type: GrantFiled: September 17, 2020Date of Patent: October 25, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hsin-Jung Liu, Chau-Chung Hou, Ang Chan, Kun-Ju Li, Wen-Chin Lin
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Publication number: 20220084878Abstract: A fabricating method of transistors includes providing a substrate with numerous transistors thereon. Each of the transistors includes a gate structure. A gap is disposed between gate structures adjacent to each other. Later, a protective layer and a first dielectric layer are formed in sequence to cover the substrate and the transistors and to fill in the gap. Next, numerous buffering particles are formed to contact the first dielectric layer. The buffering particles do not contact each other. Subsequently, a second dielectric layer is formed to cover the buffering particles. After that, a first planarization process is performed to remove part of the first dielectric layer, part of the second dielectric layer and buffering particles by taking the protective layer as a stop layer, wherein a removing rate of the second dielectric layer is greater than a removing rate of the buffering particles during the first planarization process.Type: ApplicationFiled: September 17, 2020Publication date: March 17, 2022Inventors: Fu-Shou Tsai, Yang-Ju Lu, Yong-Yi Lin, Yu-Lung Shih, Ching-Yang Chuang, Ji-Min Lin, Kun-Ju Li
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Publication number: 20220085284Abstract: A semiconductor substrate is provided. The semiconductor substrate has thereon a first dielectric layer, at least one conductive pattern disposed in the first dielectric layer, and a second dielectric layer covering the first dielectric layer and the at least one conductive pattern. A via opening is formed in the second dielectric layer. The via opening exposes a portion of the at least one conductive pattern. A polish stop layer is conformally deposited on the second dielectric layer and within the via opening. A barrier layer is conformally deposited on the polish stop layer. A tungsten layer is conformally deposited on the barrier layer. The tungsten layer and the barrier layer are polished until the polish stop layer on the second dielectric layer is exposed, thereby forming a via plug in the via opening. A bottom electrode layer is conformally deposited on the second dielectric layer and the via plug.Type: ApplicationFiled: September 17, 2020Publication date: March 17, 2022Inventors: Hsin-Jung Liu, Chau-Chung Hou, Ang Chan, Kun-Ju Li, Wen-Chin Lin