Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: An example mobile computing device includes: an antenna capable of switching between a plurality of antenna patterns; an image sensor to capture image data representing an environment of the mobile computing device; a depth sensor to capture depth data representing the environment of the mobile computing device; a processor connected to the antenna, the image sensor and the depth sensor, the processor to: obtain the image data and the depth data; select a designated antenna pattern from the plurality of antenna patterns based on the image data and the depth data; and control the antenna to use the designated antenna pattern.

Abstract: In some examples, an electronic device comprises a camera to capture data representing an environment external to the electronic device; a sensor to determine a location of a second electronic device in the environment; and a controller coupled to the camera and the sensor. The controller is to generate a representation of the environment based on the captured data; determine a relationship between the location and the representation; and perform an action based on the relationship.

Abstract: In some examples, an antenna assembly includes a driven antenna element to communicate a signal over an antenna feed line, and a printed circuit including an electrically conductive pattern that is placed adjacent the driven antenna element. The printed circuit including the electrically conductive pattern provides a parasitic antenna element for the driven antenna element.

Abstract: Approaches for controlling the transmit power of antennas of a communication device, are described. The communication device may include a first wireless communication module and a second wireless communication module. In an example, the first wireless communication module may be coupled to a first antenna.

Abstract: Example electronic devices with adjustable antennas as disclosed. In an example, the electronic device includes a housing, and an antenna disposed within the housing. The antenna includes a slot extending between a first conductive surface and a second conductive surface, and a contact clip coupled to the first conductive surface and the second conductive surface so that the first conductive surface is coupled to the second conductive surface through the contact clip. The contact clip is to move along the slot to adjust an operating frequency of the antenna.

Abstract: Techniques for controlling RF output of portable devices are described. In an example, an indication of a mode of a portable device is received. The mode is based on an inclination of the portable device. The inclination is measured in reference to a screen of the portable device and a horizontal surface. Based on the mode, an RF power level defined for the mode is determined. The RF power output of the portable device is controlled based on the RF power level.

Abstract: Techniques for controlling RF output of portable devices are described. In an example, an indication of a mode of a portable device is received. The mode is based on an inclination of the portable device. The inclination is measured in reference to a screen of the portable device and a horizontal surface. Based on the mode, an RF power level defined for the mode is determined. The RF power output of the portable device is controlled based on the RF power level.

Abstract: A frame includes first and second leads and a body. The first and second leads contain a metal material. The body contains a non-metal material and has first and second side surfaces. The first and second leads are covered with the body. The first and second leads extend in a first direction to outwardly protrude from the body. The first and second side surfaces are respectively abutted against two ends of the protruding first lead and respectively slanted to the two ends of the protruding first lead by a first angle ?1 and a second angle ?2, which are defined by the following relationship, ?1?0° and the ?1?180°, and the ?2?0° and the ?2?180°. The substance between any two points in each of the first and second side surfaces is non-metal.

Abstract: An LED package structure includes a first metal plate, a second metal plate, and a mold. The first metal plate has at least one first protrusion portion. The second metal plate has at least one second protrusion portion. The mold is disposed on the first metal plate and the second metal plate, in which the mold has a first side surface, a second side surface opposite to the first side surface, a third side surface, and a fourth side surface opposite to the third side surface. The first and second protrusion portion protrude respectively from the first side surface and the second side surface, and the first metal plate and the second metal plate are covered by the third side surface and the fourth side surface, in which a portion of the first side surface between the first edge and the first protrusion portion is a fracture surface.

Abstract: An LED package structure includes a first metal plate, a second metal plate, and a mold. The first metal plate has at least one first protrusion portion. The second metal plate has at least one second protrusion portion. The mold is disposed on the first metal plate and the second metal plate, in which the mold has a first side surface, a second side surface opposite to the first side surface, a third side surface, and a fourth side surface opposite to the third side surface. The first and second protrusion portion protrude respectively from the first side surface and the second side surface, and the first metal plate and the second metal plate are covered by the third side surface and the fourth side surface, in which a portion of the first side surface between the first edge and the first protrusion portion is a fracture surface.

Abstract: A frame includes first and second leads and a body. The first and second leads contain a metal material. The body contains a non-metal material and has first and second side surfaces. The first and second leads are covered with the body. The first and second leads extend in a first direction to outwardly protrude from the body. The first and second side surfaces are respectively abutted against two ends of the protruding first lead and respectively slanted to the two ends of the protruding first lead by a first angle ?1 and a second angle ?2, which are defined by the following relationship, ?1?0° and the ?1?180°, and the ?2?0° and the ?2?180°. The substance between any two points in each of the first and second side surfaces is non-metal.

Abstract: A process for fabricating crown capacitors is described. A substrate having a template layer thereon is provided. A patterned support layer is formed over the template layer. A sacrifice layer is formed over the substrate covering the patterned support layer. Holes are formed through the sacrifice layer, the patterned support layer and the template layer, wherein the patterned support layer is located at a depth at which bowing of the sidewalls of the holes occurs and is bowed less than the sacrifice layer at the sidewalls. A substantially conformal conductive layer is formed over the substrate. The conductive layer is then divided into lower electrodes of the crown capacitors.

Abstract: A process for fabricating crown capacitors is described. A substrate having a template layer thereon is provided. A patterned support layer is formed over the template layer. A sacrifice layer is formed over the substrate covering the patterned support layer. Holes are formed through the sacrifice layer, the patterned support layer and the template layer, wherein the patterned support layer is located at a depth at which bowing of the sidewalls of the holes occurs and is bowed less than the sacrifice layer at the sidewalls. A substantially conformal conductive layer is formed over the substrate. The conductive layer is then divided into lower electrodes of the crown capacitors.

Abstract: A method of piping defect detection is provided. A semiconductor substrate having an active region and an isolation region is provided, a plurality of semiconductor elements are formed on the semiconductor substrate, a dielectric layer is deposited on the semiconductor substrate and the semiconductor elements, and first and second contact plugs are formed in the dielectric layer to connect the active region and the isolation region respectively. The first contact plug and the second contact plug are illuminated by an electron beam, accumulating charge on the second contact plug, and piping defects are detected between the first contact plug and the second contact plug according to brightness contrast between the first contact plug and the second contact plug.

Abstract: A method of piping defect detection is provided. A semiconductor substrate having an active region and an isolation region is provided, a plurality of semiconductor elements are formed on the semiconductor substrate, a dielectric layer is deposited on the semiconductor substrate and the semiconductor elements, and first and second contact plugs are formed in the dielectric layer to connect the active region and the isolation region respectively. The first contact plug and the second contact plug are illuminated by an electron beam, accumulating charge on the second contact plug, and piping defects are detected between the first contact plug and the second contact plug according to brightness contrast between the first contact plug and the second contact plug.

Abstract: A structure of a probe is disclosed. The structure of the probe comprises a tube which comprises a larger end and a smaller end with a through hole disposed therewith, an axle having a supporting portion is positioned on the larger end of the tube, wherein the supporting portion comprises a fitting aperture, a pointed element fixed into the fitting aperture of the axle passes through the through hole of the tube, a positioning element positioned at a predetermined portion of the pointed element, a resilient element positioned around the axle, and a positioning cap comprising a through channel for fitting onto the axle and pressing against a juncture of the tube, wherein a smaller end of the positioning cap is formed as a positioning portion for positioning the resilient element. The pointed element is elastically slidable within the tube is used for probing.

Abstract: A method of manufacturing semiconductor devices. A gate structure is formed over a substrate. A dopant implantation is carried out to form a lightly doped region in the substrate on each side of the gate structure. An insulation layer is formed over the substrate. A portion of the insulation is later removed so that a portion of the insulation layer is retained over the substrate on each side of the gate structure. A spacer is formed on each sidewall of the gate structure. Another ion implantation is carried out such that the dopants penetrate through the insulation layer on the substrate on each side of the gate structure to form a heavily doped region in the substrate.