Patents by Inventor Kun-Yuan Liao
Kun-Yuan Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11881409Abstract: A method of cutting fins includes the following steps. A photomask including a snake-shape pattern is provided. A photoresist layer is formed over fins on a substrate. A photoresist pattern in the photoresist layer corresponding to the snake-shape pattern is formed by exposing and developing. The fins are cut by transferring the photoresist pattern and etching cut parts of the fins.Type: GrantFiled: June 28, 2021Date of Patent: January 23, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Wei-Hao Huang, Chun-Lung Chen, Kun-Yuan Liao, Lung-En Kuo, Chia-Wei Hsu
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Publication number: 20240006525Abstract: A method for manufacturing a high electron mobility transistor device includes providing a substrate. A channel material, a barrier material, a polarization adjustment material and a conductive material are formed on the substrate. A hard mask layer is formed on the conductive material. The conductive material is patterned to form a conductive layer by using the hard mask layer as a mask. A plurality of protection layers is formed on sidewalls of the hard mask layer and the conductive layer. The polarization adjustment material is patterned to form a polarization adjustment layer by using the plurality of protection layers and the hard mask as masks. The plurality of protection layers is removed. A portion of the conductive layer is laterally removed to form a first gate conductive layer.Type: ApplicationFiled: July 21, 2022Publication date: January 4, 2024Applicant: United Microelectronics Corp.Inventors: Yuan Yu Chung, Bo-Yu Chen, You-Jia Chang, Lung-En Kuo, Kun-Yuan Liao, Chun-Lung Chen
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Publication number: 20230354715Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a passivation layer on the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on the passivation layer. Preferably, a top surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the passivation layer directly on top of the first MTJ.Type: ApplicationFiled: June 27, 2023Publication date: November 2, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Yu-Tsung Lai, Wei-Hao Huang
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Publication number: 20230320229Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and form a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.Type: ApplicationFiled: May 10, 2023Publication date: October 5, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Yu-Tsung Lai, Wei-Hao Huang
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Patent number: 11778922Abstract: A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.Type: GrantFiled: November 22, 2021Date of Patent: October 3, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Yu-Tsung Lai, Wei-Hao Huang
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Patent number: 11737370Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a passivation layer on the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on the passivation layer. Preferably, a top surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the passivation layer directly on top of the first MTJ.Type: GrantFiled: January 4, 2021Date of Patent: August 22, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Yu-Tsung Lai, Wei-Hao Huang
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Patent number: 11706993Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.Type: GrantFiled: December 27, 2020Date of Patent: July 18, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Yu-Tsung Lai, Wei-Hao Huang
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Publication number: 20230112917Abstract: A fabricating method of a high electron mobility transistor includes providing a substrate. Then, a channel layer, an active layer, a P-type group III-V compound material layer, a metal compound material layer, a hard mask material layer and a patterned photoresist are formed to cover the substrate. Later, a dry etching process is performed to etch the hard mask material layer and the metal compound material layer to form a hard mask and a metal compound layer by taking the patterned photoresist as a mask. During the dry etching process, a spacer generated by by-products is formed to surround the patterned photoresist, the hard mask and the metal compound layer. After the dry etching process, the P-type group III-V compound material layer is etched by taking the spacer and the patterned photoresist as a mask.Type: ApplicationFiled: October 31, 2021Publication date: April 13, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Ming-Hua Chang, Kun-Yuan Liao, Lung-En Kuo, Chih-Tung Yeh
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Publication number: 20230006041Abstract: A semiconductor device is provided. The semiconductor device includes a substrate and a plurality of nanowires. The substrate has an upper surface. The nanowires are stacked on the upper surface of the substrate along a first direction. The nanowires include a triangle in a cross section, and the nanowires include a plane extending along a second direction, a first down-slant facet on a (111) plane, and a second down-slant facet on an additional (111) plane.Type: ApplicationFiled: July 27, 2021Publication date: January 5, 2023Inventors: Jing-Wen HUANG, Wei-Hao HUANG, Chung-Yi CHIU, Lung-En KUO, Kun-Yuan LIAO
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Publication number: 20220384200Abstract: A method of cutting fins includes the following steps. A photomask including a snake-shape pattern is provided. A photoresist layer is formed over fins on a substrate. A photoresist pattern in the photoresist layer corresponding to the snake-shape pattern is formed by exposing and developing. The fins are cut by transferring the photoresist pattern and etching cut parts of the fins.Type: ApplicationFiled: June 28, 2021Publication date: December 1, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Wei-Hao Huang, Chun-Lung Chen, Kun-Yuan Liao, Lung-En Kuo, Chia-Wei Hsu
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Publication number: 20220085283Abstract: A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.Type: ApplicationFiled: November 22, 2021Publication date: March 17, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Yu-Tsung Lai, Wei-Hao Huang
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Publication number: 20210151666Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a passivation layer on the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on the passivation layer. Preferably, a top surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the passivation layer directly on top of the first MTJ.Type: ApplicationFiled: January 4, 2021Publication date: May 20, 2021Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Yu-Tsung Lai, Wei-Hao Huang
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Publication number: 20210119115Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.Type: ApplicationFiled: December 27, 2020Publication date: April 22, 2021Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Yu-Tsung Lai, Wei-Hao Huang
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Patent number: 10916694Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.Type: GrantFiled: January 23, 2019Date of Patent: February 9, 2021Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Yu-Tsung Lai, Wei-Hao Huang
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Patent number: 10854520Abstract: The present invention provides a method for forming a semiconductor structure. The method including: Firstly, a substrate is provided, a first region and a second region are defined thereon, next, a gate dielectric layer and a work function metal layer are sequentially formed on the substrate within the first region and within the second region. Afterwards, a dielectric layer is formed on the work function metal layer within the second region, a hydrogen gas treatment is then performed on the substrate, and the work function metal layer is removed within the first region.Type: GrantFiled: May 20, 2019Date of Patent: December 1, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Chun-Hsien Lin, Wei-Hao Huang, Kai-Teng Cheng
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Publication number: 20200212290Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.Type: ApplicationFiled: January 23, 2019Publication date: July 2, 2020Inventors: Hui-Lin Wang, Tai-Cheng Hou, Wei-Xin Gao, Fu-Yu Tsai, Chin-Yang Hsieh, Chen-Yi Weng, Jing-Yin Jhang, Bin-Siang Tsai, Kun-Ju Li, Chih-Yueh Li, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Yu-Tsung Lai, Wei-Hao Huang
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Publication number: 20190279909Abstract: The present invention provides a method for forming a semiconductor structure. The method including: Firstly, a substrate is provided, a first region and a second region are defined thereon, next, a gate dielectric layer and a work function metal layer are sequentially formed on the substrate within the first region and within the second region. Afterwards, a dielectric layer is formed on the work function metal layer within the second region, a hydrogen gas treatment is then performed on the substrate, and the work function metal layer is removed within the first region.Type: ApplicationFiled: May 20, 2019Publication date: September 12, 2019Inventors: Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Chun-Hsien Lin, Wei-Hao Huang, Kai-Teng Cheng
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Publication number: 20190252259Abstract: The present invention provides a method for forming a semiconductor structure. The method including: Firstly, a substrate is provided, a first region and a second region are defined thereon, next, a gate dielectric layer and a work function metal layer are sequentially formed on the substrate within the first region and within the second region. Afterwards, a dielectric layer is formed on the work function metal layer within the second region, a hydrogen gas treatment is then performed on the substrate, and the work function metal layer is removed within the first region.Type: ApplicationFiled: February 11, 2018Publication date: August 15, 2019Inventors: Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Chun-Hsien Lin, Wei-Hao Huang, Kai-Teng Cheng
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Patent number: 10332978Abstract: A semiconductor device with reinforced gate spacers and a method of fabricating the same. The semiconductor device includes low-k dielectric gate spacers adjacent to a gate structure. A high-k dielectric material is disposed over an upper surface of the low-k dielectric gate spacers to prevent unnecessary contact between the gate structure and a self-aligned contact structure. The high-k dielectric material may be disposed, if desired, over an upper surface of the gate structure to provide additional isolation of the gate structure from the self-aligned contact structure.Type: GrantFiled: August 29, 2017Date of Patent: June 25, 2019Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chia-Lin Lu, Yu-Cheng Tung, Chun-Lung Chen, Kun-Yuan Liao, Feng-Yi Chang
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Patent number: 10199374Abstract: A method for fabricating semiconductor device is disclosed. A substrate having a first transistor on a first region, a second transistor on a second region, a trench isolation region, a resistor-forming region is provided. A first ILD layer covers the first region, the second region, and the resistor-forming region. A resistor material layer and a capping layer are formed over the first region, the second region, and the resistor-forming region. The capping layer and the resistor material layer are patterned to form a first hard mask pattern above the first and second regions and a second hard mask pattern above the resistor-forming region. The resistor material layer is isotropically etched. A second ILD layer is formed over the substrate. The second ILD layer and the first ILD layer are patterned with a mask and the first hard mask pattern to form a contact opening.Type: GrantFiled: November 28, 2017Date of Patent: February 5, 2019Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Hsiang-Hung Peng, Wei-Hao Huang, Ching-Wen Hung, Chih-Sen Huang