Abstract: The present disclosure provides a thin film transistor, a method for manufacturing the thin film transistor, an array substrate and a display panel. The thin film transistor includes: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate, wherein the active layer includes a first semiconductor layer and a second semiconductor layer sequentially arranged in a direction perpendicular to the substrate, the second semiconductor layer is arranged on a side of the first semiconductor layer away from the gate electrode; an absolute value of a difference between conduction band minimums of a first oxide material and a second oxide material is greater than 0.2 eV.

Abstract: A tunneling field effect transistor includes a gate electrode, a tunneling field active layer, a first electrode, and a second electrode disposed on a base substrate; the tunneling field active layer includes a first-type active layer and a second-type active layer that are stacked, wherein the first-type active layer includes a first-type channel region and a first source-drain region, the second-type active layer includes a second-type channel region and a second source-drain region, an orthographic projection of the first-type channel region on the base substrate is completely overlapped with an orthographic projection of the second-type channel region on the base substrate, the first source-drain region is located at a side of the tunneling field active layer and is connected with the first electrode.

Abstract: Provided is an analysis method for determining gas-bearing situation of an unknown shale reservoir, includes: S1, selecting a shale reservoir of a target interval of a place; and collecting data of parameters of cores of each of a known gas-bearing shale reservoir A and a known water-bearing shale reservoir B; S2, calculating average values of the parameters of each of the reservoirs A and B respectively; S3, calculating average differences of the parameters of each of the reservoirs; S4, calculating covariance values of the parameters of each of the reservoirs; S5, establishing, according to the covariance values, an equation group and resolving discriminant coefficients; S6, establishing a discriminant equation according to the discriminant coefficients and solving a discriminant index; and S7, obtaining values of parameters of cores of a sample of the unknown shale reservoir, calculating a discriminant value, and determining gas-bearing situation of the unknown shale reservoir.

Abstract: A method carried out in a radio node of a wireless network for facilitating joint channel estimation in communication with a User Equipment, UE, the method comprising: providing (702), to the UE, radio configuration for a channel (PUSCH, PUCCH) identifying resources for Uplink, UL, transmission within a first frequency domain allocation (83); configuring (704) the UE to transmit, in reference signal resources associated with the radio configuration, a reference signal (DMRS) for use in the radio node for joint channel estimation, wherein said reference signal resources comprise first reference signal resources (81) allocated within said first frequency domain allocation, and second reference signal resources (82) outside said first frequency domain allocation to facilitate joint channel estimation over a transmission disruption within the first frequency domain allocation.

Abstract: A method for performing an erasing operation on a memory device is provided. The memory device includes a bottom select gate, a plate line above the bottom select gate, a word line above the plate line, a pillar extending through the bottom select gate, the plate line, and the word line, a source line under the pillar, a drain cap above the pillar, and a bit line formed above the drain cap. A first positive voltage bias is applied to the bottom select gate. A second positive voltage bias is applied to the plate line. The first positive voltage bias to the bottom select gate is reduced. A negative voltage bias is applied to the source line.

Abstract: Method, carried out in a radio terminal, for configuring uplink output power of radio transmission from the radio terminal, comprising determining a demand power reduction (P-MPR1) based on a maximum power level associated with a first uplink duty cycle (UDC1); transmitting, to a radio network node, an indication of the demand power reduction; receiving, from the network node, an indication of a target power reduction (P-MPR2) associated with an actual uplink duty cycle (UDC2); and configuring the output power based on the target power reduction.

Abstract: A three-dimensional (3D) printing build material composition includes polyamide particles and a filler material consisting of aramid fibers having an aspect ratio ranging from about 0.1 mm/20 ?m to about 1.2 mm/16 ?m. The polyamide particles are present in an amount of at least 82 wt % based on a total weight of the build material composition, and the aramid fibers are present in an amount ranging from about 2 wt % to about 18 wt % based on the total weight of the build material composition.

Abstract: A high-brightness picosecond laser system, comprising a fully polarization-maintaining fiber picosecond seed laser (1), a fiber collimator (2), a space isolator (3), a polarization splitting prism (5), a first-stage solid traveling wave amplifier (6), a second-stage solid traveling wave amplifier (7), and a third-stage solid traveling wave amplifier (8) which are sequentially arranged in the laser transmission direction. The first-stage solid traveling wave amplifier (6) is located on the transmission light side of the polarization splitting prism (5), the second-stage solid traveling wave amplifier (7) is located on the reflected light side of the polarization splitting prism (5), and the fiber collimator (2) is connected to the fully polarization-maintaining fiber picosecond seed laser (1) by means of a tail fiber.

Abstract: An array substrate includes a substrate, the array substrate includes a display region and a detection region. And the detection region includes a thin film transistor located on the substrate and a photodiode located on one side of the thin film transistor away from the substrate, and the array substrate further includes a first inorganic protective layer, an organic protective layer and a second inorganic protective layer located between the thin film transistor and the photodiode. And the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are stacked in sequence in a direction away from the substrate, and an orthographic projection of the photodiode on the substrate is within the range of the orthographic projection of the organic protective layer on the substrate.

Abstract: Provided are a thin film transistor, a display substrate and a display device, the thin film transistor includes: a gate on a base substrate; an active layer between the gate and the base substrate, the active layer includes a source contact portion, a drain contact portion and a middle portion therebetween, orthographic projections of the middle portion and the gate on the base substrate overlaps to form a first overlapping region, a material of the middle portion includes a metal oxide containing a doped element, a dissociation energy of the doped element from an oxygen element is greater than 500 Kj/mol; a source connected to the source contact portion and a drain connected to the drain contact portion, a ratio of an area of the orthographic projection of the gate on the base substrate to an area of the first overlapping region is less than or equal to 3.

Abstract: A first node obtains a corresponding physical address based on a first virtual address in a first request. The first request may be sent by an application in the first node, and is used to request to read data of a second node or request to write data to the second node. Then, the first node sends a second request corresponding to the first request to the second node based on a first mapping relationship. Because the bus address indicates a virtual address corresponding to an instance of the second node, when the virtual address may be accessed by the first node based on the first request, the virtual address may be accessed by the second node, or may be accessed by another node based on a request, to implement address sharing in data access.

Abstract: A multi-layer frequency selective surface is disclosed that exhibits a frequency response having a passband and one or more stopbands.

Abstract: A multi-task learning method comprises: determining participating nodes; performing clustering to the participating nodes and determining several clusters; determining a global model for the clusters according to the several clusters and by means of the federated learning within the cluster; determining a cluster key feature set of any one of the clusters according to the cluster model and by means of calculation with the SHAP framework; determining a global model according to the cluster key feature set; and training the global model according to the any one of the clusters, and determining the cluster model of the any one of the clusters, wherein a plurality of the clusters are used for achieving multi-task learning. In the present application, by clustering, the participating nodes having similar device performance and data distribution are collected into the same group, and the participating nodes within the same cluster are trained together.

Abstract: A method for reflective index modulation based on intelligent reflecting surface, in which an IRS control unit is added into wireless communication system, and the data to be transmitted in a transmission is divided into two parts: a reflective domain data dr and a phase-amplitude domain data dc, the reflective domain data dr is transmitted through a wired connection to the IRS control unit to activate or deactivate each group of reflecting elements, the phase-amplitude domain data dc is modulated through traditional phase-amplitude domain modulation and transmitted to the IRS, the reflected signals contain the information of the reflective domain data dr, through the demodulating the baseband symbol ym,j, an estimated phase-amplitude modulation index m and an estimated reflective index j are obtained to recover the phase-amplitude domain data dc and the value of the reflective domain data dr respectively.

Abstract: Provided is a micro-nano fluidic substrate, a chip, a preparation method, and a system. The micro-nano fluidic substrate includes: a base; an electrode layer located on the base, the electrode layer includes a first electrode, a second electrode, and a control electrode; and a film layer located on the electrode layer and far away from the base, the film layer includes a groove layer, a nano-channel and a micro-channel, the groove layer includes a first groove, the nano-channel is located in the first groove, an orthographic projection of the nano-channel on the base at least partially coincides with an orthographic projection of the control electrode on the base, and the micro-channel is in communication with the nano-channel, the micro-channel includes a first micro-channel and a second micro-channel, and the first micro-channel is in communication with the first electrode, the second micro-channel is in communication with the second electrode.

Abstract: A system and a method for squaring a ingot are provided, the system for squaring a ingot, including: a squaring chamber configured to remove cut edges of the ingot; and a movement stage disposed at one side of the squaring chamber in a first direction, wherein the movement stage is provided with a loading mechanism and a unloading mechanism, the loading mechanism and the unloading mechanism are respectively arranged on two sides of the movement stage opposite to each other in a second direction different from the first direction, and while the unloading mechanism collects the cut edges and removes the ingot after removal of the cut edges, the loading mechanism is configured to transport another ingot to be squared to the squaring chamber.

Abstract: The present disclosure provides a blockchain-based green power certification method, apparatus, and system, to pre-process obtained basic data to obtain proof-of-existence data, certify the proof-of-existence data from a production side and a consumption side by using a certification chain and a token chain respectively, and obtain a green power attribute certificate and a green power consumption label if the certification is passed; generate a unique digital identifier for the green power attribute certificate and the green power consumption label separately based on a non-fungible token (NFT), which realizes non-interchangeability, indivisibility, and other characteristics of the certificate and the identifier; and supervise and verify a certification process by using a chain of custody, and generate a corresponding unique blockchain identifier for the certification chain, the token chain, and the chain of custody separately through multi-chain interaction, so as to realize data interaction between blockcha

Abstract: A computer implemented method for determining weights for an attention based trajectory prediction comprises the following steps carried out by computer hardware components: receiving a sequence of a plurality of captures taken by a sensor; determining an unnormalized weight for a first capture of the sequence based on the first capture of the sequence; and determining a normalized weight for the first capture of the sequence based on the unnormalized weight for the first capture of the sequence and a normalized weight for a second capture of the sequence.

Abstract: The present disclosure provides a metal oxide thin film transistor, an array substrate and a display device. A metal oxide thin film transistor in the present disclosure includes: a substrate, a first metal oxide semiconductor layer on the substrate, and a second metal oxide semiconductor layer on a side of the first metal oxide semiconductor layer away from the substrate; a carrier mobility of the first metal oxide semiconductor layer is higher than that of the second metal oxide semiconductor layer; a material of the first metal oxide semiconductor layer includes: a first metal oxide doped with a rear earth element; a difference between an electronegativity of the rare earth element and an electronegativity of oxygen element is greater than or equal to a difference between an electronegativity of a metal element in the first metal oxide and the electronegativity of oxygen element.

Abstract: A wiring board includes a base substrate and first connection pads disposed on the base substrate. The first connection pads each include electrical connection layer(s); each electrical connection layer includes a main material layer and protective layer(s) disposed on a side of the main material layer away from the base substrate; the protective layer(s) include a first reference protective layer, which is a protective layer farthest away from the base substrate in the protective layer(s); and a material of the main material layer includes copper. The electrical connection layer(s) includes a first electrical connection layer, which is an electrical connection layer farthest away from the base substrate in the electrical connection layer(s); and in protective layer(s) in the first electrical connection layer, at least a material of the first reference protective layer is capable of forming a first intermetallic compound with a first solder.