Abstract: The method includes the steps of measuring a surface height of a polishing member 10 at each of plural oscillation sections Z1 to Z5 which are defined in advance on the polishing member 10 along an oscillation direction of a dresser 5; calculating a difference between a current profile obtained from measured values of the surface height and a target profile of the polishing member 10; and correcting moving speeds of the dresser 5 in the plural oscillation sections Z1 to Z5 so as to eliminate the difference.

Abstract: A polishing method that carries out a multi-step polishing process with improved polishing conditions (polishing recipe) while omitting measurement of the surface conditions of a substrate, as carried out between polishing steps thereby increasing the throughput.

Abstract: A polishing method can bring a polishing surface to the optimum condition for polishing, without using a dummy wafer, before resuming polishing, thereby eliminating the cost of dummy wafer. The polishing method includes carrying out a stand-by operation during a polishing-resting time period, carrying out a preparatory process to polishing, after completion of the stand-by operation, by dressing a polishing surface while supplying a polishing liquid to the polishing surface, and starting polishing of a workpiece after completion of the preparatory process to polishing. A determination as to whether to carry out the preparatory process to polishing after completion of the stand-by operation may be made based on the total operating time of the stand-by operation or the total effective number of the stand-by operations.

Abstract: A polishing method for reducing an amount of polishing liquid used without lowering a polishing rate is provided. The polishing method comprises determining, in advance, the relationship between a supply flow rate of a polishing liquid and a polishing rate at the time the substrate is polished without controlling a surface temperature of the polishing pad, and the relationship between a supply flow rate of a polishing liquid and a polishing rate at the time the substrate is polished while controlling a surface temperature of the polishing pad at a predetermined level, and continuously supplying the polishing liquid to the surface of the polishing pad to achieve a higher polishing rate when the substrate is polished while controlling the surface temperature of the polishing pad at the predetermined level, than when the substrate is polished without controlling the surface temperature of the polishing pad.

Abstract: A polishing method that carries out a multi-step polishing process with improved polishing conditions (polishing recipe) while omitting measurement of the surface conditions of a substrate, as carried out between polishing steps thereby increasing the throughput.

Abstract: A polishing method that carries out a multi-step polishing process with improved polishing conditions (polishing recipe) while omitting measurement of the surface conditions of a substrate, as carried out between polishing steps thereby increasing the throughput.

Abstract: A polishing method can bring a polishing surface to the optimum condition for polishing, without using a dummy wafer or the like, before resuming polishing, thereby eliminating the cost of dummy wafer or the like. The polishing method comprises: carrying out a stand-by operation during a polishing-resting time period; carrying out a preparatory process to polishing, after completion of the stand-by operation, by dressing a polishing surface while supplying a polishing liquid to the polishing surface; and starting polishing of a workpiece after completion of the preparatory process to polishing. Determination as to whether to carry out the preparatory process to polishing after completion of the stand-by operation may be made based on the total operating time of the stand-by operation or the total effective number of the stand-by operations.

Abstract: A polishing method make it possible to carry out a multi-step polishing process with improved polishing conditions (polishing recipe) while omitting measurement of the surface conditions of a substrate, as carried out between polishing steps, as much as possible, thereby increasing the throughput.

Abstract: An optical fiber cord which is a single core optical fiber cord having an outer diameter of 1.2 mm or less, and has a structure in which an optical fiber core wire having a resin coating is provided at the center, a tensile-strength-fiber layer is provided around the outer periphery of the optical fiber core wire, and a coating layer is further provided around the outer periphery of the tensile-strength-fiber layer, wherein the coating layer is composed of a non-halogen fire-retardant resin, is disclosed. This optical fiber cord has excellent fire retardant, mechanical and handling properties, although the outer diameter thereof is made smaller.

Abstract: A single core optical fiber cord having an outer diameter of 1.2 mm or less, and having a structure in which an optical fiber core wire having a resin coating provided at the center, a tensile-strength-fiber layer around the periphery of the optical fiber core wire, and a coating layer around the outer periphery of the tensile-strength-fiber layer is provided. The coating layer can be composed of a non-halogen fire-retardant resin. The optical fiber cord has excellent fire retardant, mechanical and handling properties, although the outer diameter thereof is 1.2 mm or less.

Abstract: An optical fiber cord which is a single core optical fiber cord having an outer diameter of 1.2 mm or less, and has a structure in which an optical fiber core wire having a resin coating is provided at the center, a tensile-strength-fiber layer is provided around the outer periphery of the optical fiber core wire, and a coating layer is further provided around the outer periphery of the tensile-strength-fiber layer, wherein the coating layer is composed of a non-halogen fire-retardant resin, is disclosed. This optical fiber cord has excellent fire retardant, mechanical and handling properties, although the outer diameter thereof is made smaller.

Abstract: A dressing apparatus is used for dressing a polishing surface of a polishing table used for polishing a workpiece such as a semiconductor wafer. The dressing apparatus for dressing apparatus comprises a dresser having a dressing surface for dressing the polishing surface, and the dressing surface has an area which covers an entire area of the polishing surface.

Abstract: Disclosed is a dressing apparatus wherein a polishing surface can be regenerated stably over a long period without any danger of an object to be polished being scratched. A dressing surface 50a of a dresser 48 is caused to slide on a polishing surface 30a of a polishing table 22 while the dressing surface is urged against the polishing surface. The dressing surface is formed from a grindstone 50.

Abstract: A polishing plant including a polishing apparatus having a top ring for holding a workpiece and a turn table for polishing a surface of the workpiece held by the top ring. A cleaning apparatus has cleaning machines for cleaning the workpiece polished by the polishing apparatus. At least one drainage pipe connected to the polishing apparatus discharges a waste liquid from the polishing apparatus, and at least one drainage pipe connected to the cleaning apparatus discharges a waste liquid from the cleaning apparatus are provided as separate plural drainage pipe lines, depending on the type of waste liquid. By use of the polishing plant of the present invention, treatment of waste liquids can be efficiently conducted.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus, includes a turntable having a polishing surface thereon, and a top ring for holding a workpiece to be polished and pressing the workpiece against the polishing surface on the turntable. A pusher is disposed in a position for transferring the workpiece to and from the top ring, and has a workpiece support which can be lifted to a position close to the top ring for transferring the workpiece to and from the top ring. When the workpiece support receives a polished workpiece and is lowered, a cleaning liquid is ejected substantially simultaneously from three cleaning nozzle units that are disposed in respective three positions to clean the upper and lower surfaces of the workpiece and the lower surface of the top ring.

Abstract: A polishing apparatus has a polishing table having a polishing surface, a carrier for carrying a plate-like member and bringing the plate-like member into contact with the polishing surface, and a dresser including a dressing tool adapted to be brought into contact with the polishing surface to dress or normalize the polishing surface. The carrier is movable along a first path between a work position for bringing into contact the plate-like member with the polishing surface and a rest position. The dresser is movable along a second path between a work position for bringing the dressing tool into contact with the polishing surface and a rest position. The first and second paths have a common overlapping area. A contact prevention device is provided to prevent the carrier and the dresser from coming into contact with each other.

Abstract: This invention relates to a polishing machine for polishing an article such as a semiconductor wafer. A movable arm is located at a liquid supply position for supplying a liquid such as a polishing liquid onto a polishing surface of a turntable. The arm is also adapted to be moved to and held at a retracted position radially outside the polishing surface. At the liquid supply position, liquid supply nozzles supported on the arm are brought into a condition such that the nozzles are close to a position on the polishing surface where the liquid is to be supplied, whereby the liquid is accurately supplied onto the position. Holding the arm at the retracted position makes it easy to conduct a maintenance work for the polishing surface and so on.

Abstract: A polishing apparatus includes a top ring for holding a workpiece to be polished on a lower surface thereof, a turntable having a polishing surface for polishing a surface of the workpiece held by the top ring, and a dressing tool for dressing the polishing surface of the turntable. The top ring is movable to a first maintenance position therefor, and the dressing tool is movable to a second maintenance position therefor. The top ring, the turntable, and the dressing tool are housed in a single chamber having a plurality of side faces. The polishing surface, the first maintenance position, and the second maintenance position are positioned closely to one of the side faces of the chamber. Such one side face serves as a maintenance face for approaching the polishing surface, the first maintenance position, and the second maintenance position for maintenance of the polishing surface, the top ring and the dressing tool.

Abstract: A polishing plant includes a polishing apparatus having a top ring for holding a workpiece and a turn table for polishing a surface of the workpiece held by the top ring. A cleaning apparatus has cleaning machines for cleaning the workpiece polished by the polishing apparatus. At least one drainage pipe connected to the polishing apparatus discharges a waste liquid from the polishing apparatus, and at least one drainage pipe connected to the cleaning apparatus to discharges a waste liquid from the cleaning apparatus are provided as separate plural of drainage pipe lines, depending on the type of waste liquid. By use of the polishing plant of the present invention, treatment waste liquids can be efficiently conducted.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a turntable having a polishing surface thereon, and a top ring for holding a workpiece to be polished and pressing the workpiece against the polishing surface on the turntable. A pusher is disposed in a position for transferring the workpiece to and from the top ring, and has a workpiece support which can be lifted to a position close to the top ring for transferring the workpiece to and from the top ring. When the workpiece support receives a polished workpiece and is lowered, a cleaning liquid is ejected substantially simultaneously from three cleaning nozzle units that are disposed in respective three positions to clean the upper and lower surfaces of the workpiece and the lower surface of the top ring.