Abstract: As a novel substance having a novel skeleton, an organometallic complex with high emission efficiency which achieves improved color purity by a reduction of half width of an emission spectrum is provided. One embodiment of the present invention is an organometallic complex in which a ?-diketone and a six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom are ligands. In General Formula (G1), X represents a substituted or unsubstituted six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom. Further, R1 to R4 each represent a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms.

Abstract: A light-emitting element with high emission efficiency. The light-emitting element includes a pair of electrodes and an EL layer between the pair of electrodes. In the light-emitting element, the EL layer contains at least a light-emitting material, the light-emitting material is a 1,6-bis(diphenylamino)pyrene derivative, and a structural change between an excited state and a ground state in the 1,6-bis(diphenylamino)pyrene derivative is smaller than that in a 1,6-bis(diphenylamino)pyrene derivative in which hydrogen is bonded to ortho positions of two phenyl groups of each of two diphenylamino groups.

Abstract: A driving force transmission apparatus including a tank which reserves lubricating oil in an accommodating space which is interposed between a housing and an inner shaft and an apparatus case which has a cylindrical accommodating portion which accommodates the housing, and in the case, the accommodating portion has an inner circumferential surface which faces an outer circumferential surface of the housing, and the tank has an oil inlet port which is opened to the inner circumferential surface of the accommodating portion and through which the lubricating oil in the accommodating space is let in based on a centrifugal force generated in association with the rotation of the housing when a four-wheel drive vehicle travels forwards in a two-wheel drive mode.

Abstract: Control device of an internal combustion engine that determines whether or not to perform sensor element heating control of an air-fuel ratio sensor with high accuracy based on the mass of condensed water in an exhaust pipe. The control device computes the rate of change of condensed water mass in an exhaust pipe based on the saturated water vapor pressure and the water vapor partial pressure of exhaust gas, and computes the rate of change of evaporation mass in the exhaust pipe based on the amount of heat which the condensed water receives in the exhaust pipe. The control device updates the mass of condensed water based on the rate of change of condensed water mass and the rate of change of evaporation mass, and determines whether or not to perform heating control by a heating controlling unit based on the updated mass of condensed water.

Abstract: An apparatus for manufacturing a semiconductor device includes an out-heater including a heater element formed in an annular shape with a disconnected portion at one place, a first electrode component connected to a first heater electrode part of the heater element, a second electrode component connected to a second heater electrode part of the heater element, and a base including a first groove in which the first electrode component is fixedly disposed, and a second groove in which the second electrode component is movably disposed and a groove width in a circumferential direction of the heater element is formed such that a width of a second gap formed between a side of the second electrode component and an inner wall of the groove is wider than a width of a first gap formed between a side of the first electrode component and an inner wall of the first groove.

Abstract: A manufacturing apparatus for a semiconductor device includes: a chamber configured to load a wafer into the chamber; a gas supplying mechanism configured to supply processed gas into the chamber; a gas discharging mechanism configured to discharge the gas from the chamber; a wafer supporting member configured to mount the wafer; a heater including a heater element configured to heat the wafer up to a predetermined temperature and a heater electrode molded integrally with the heater element; an electrode part connected to the heater electrode and configured to applied a voltage to the heater element via the heater electrode; a base configured to fix the electrode part; and a rotational drive control mechanism configured to rotate the wafer; wherein at least a part of a connection portion of the heater electrode and the electrode part is positioned under the upper surface of the base.

Abstract: A vehicle driving force distribution device includes: a differential gear; a driving force transmission device; and a case member having a first accommodating chamber accommodating the differential gear and a second accommodating chamber accommodating the driving force transmission device. The case member has a first flow passage that allows lubricating oil to flow from the first accommodating chamber into the second accommodating chamber, and a second flow passage that allows lubricating oil to flow from the second accommodating chamber into the first accommodating chamber. In a two-wheel drive mode, lubricating oil flows from the second accommodating chamber into the first accommodating chamber through the second flow passage. In a four-wheel drive mode, lubricating oil flows from the first accommodating chamber into the second accommodating chamber through the first flow passage.

Abstract: An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced.

Abstract: An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than 6×1020 atoms/cm3 and a fluorine concentration greater than or equal to 1×1020 atoms/cm3 is used as a gate insulating layer in contact with an oxide semiconductor layer forming a channel region, so that the amount of hydrogen released from the gate insulating layer can be reduced and diffusion of hydrogen into the oxide semiconductor layer can be prevented. Further, hydrogen present in the oxide semiconductor layer can be eliminated with the use of fluorine; thus, the hydrogen content in the oxide semiconductor layer can be reduced. Consequently, the semiconductor device having good electrical characteristics can be provided.

Abstract: A driving force transmission control system includes: an electric motor; a multi-disc clutch; a cam mechanism that converts rotation output from the electric motor into cam thrust force that is axial force in the axial direction of the multi-disc clutch; a pressure-conversion mechanism that converts reaction force against the cam thrust force into pressure of a fluid; a pressure sensor that detects the pressure; and a control unit that computes a command value of a current supplied to the electric motor. The control unit stores the pressure of the fluid during disengagement of the multi-disc clutch, and computes the current command value based on the pressure of the fluid to which the reaction force against the cam thrust force has been applied, and the stored pressure of the fluid.

Abstract: A display device that includes a first flexible substrate, a first bonding layer over the first flexible substrate, a first insulating film over the first bonding layer, a first element layer over the first insulating film, a second element layer over the first element layer, a second insulating film over the second element layer, a second bonding layer over the second insulating film, and a second flexible substrate over the second bonding layer is provided. The first element layer includes a pixel portion and a circuit portion. The pixel portion includes a display element and a first transistor, and the circuit portion includes a second transistor. The second element layer includes a coloring layer and a light-blocking layer.

Abstract: An object is to provide a novel peeling method and a novel peeling apparatus. A peeling method including a first step of forming a separation layer over a substrate, a second step of forming a layer to be separated over the separation layer, a third step of forming a peeling starting point by separating part of the layer to be separated from the separation layer, and a fourth step of peeling the layer to be separated from the substrate using the peeling starting point. In the fourth step, the substrate temperature is higher than or equal to 60 degrees Celsius and lower than or equal to 90 degrees Celsius.

Abstract: A speed reduction mechanism includes a bearing mechanism arranged on an axis of an output mechanism and including ball bearings that are arranged in parallel with each other in an axial direction of a differential case. The differential case is rotatably supported by the ball bearings of the bearing mechanism such that the entirety of an outer periphery of one of the ball bearings faces an inner periphery of a first housing element that accommodates the differential case and that is made of a material having a stiffness lower than a stiffness of a material of a rotation force applying member, and the entirety of an outer periphery of the other one of the ball bearings faces an inner periphery of the rotation force applying member.

Abstract: An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced.

Abstract: A thin film transistor in which deterioration at initial operation is not likely to be caused and a manufacturing method thereof. A transistor which includes a gate insulating layer at least whose uppermost surface is a silicon nitride layer, a semiconductor layer over the gate insulating layer, and a buffer layer over the semiconductor layer and in which the concentration of nitrogen in the vicinity of an interface between the semiconductor layer and the gate insulating layer, which is in the semiconductor layer is lower than that of the buffer layer and other parts of the semiconductor layer. Such a thin film transistor can be manufactured by exposing the gate insulating layer to an air atmosphere and performing plasma treatment on the gate insulating layer before the semiconductor layer is formed.

Abstract: When an outer ring is fitted to an inner periphery of an input member, which defines a center hole, and an inner ring is fitted to an eccentric portion with clearances in a reduction-transmission mechanism, in a state where tooth tips of the input member contact bottomlands of a rotation force applying member on a line perpendicular to a second axis and a fourth axis, a size between the second axis and a third axis is set to a size that is smaller than or equal to half of a size obtained by adding a diameter difference between an outside diameter of a ball bearing and an inside diameter of the input member, which defines the center hole, a diameter difference between an inside diameter of the ball bearing and an outside diameter of the eccentric portion and an operating clearance of the ball bearing.

Abstract: A film formation apparatus according to an embodiment includes: a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole.

Abstract: Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.

Abstract: An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H2O) is eliminated from an oxide semiconductor layer with use of a halogen element typified by fluorine or chlorine, so that the impurity concentration in the oxide semiconductor layer is reduced. A gate insulating layer and/or an insulating layer provided in contact with the oxide semiconductor layer can be formed to contain a halogen element. In addition, a halogen element may be attached to the oxide semiconductor layer through plasma treatment under an atmosphere of a gas containing a halogen element.

Abstract: An electromagnetic clutch device includes: a meshing member; an electromagnetic coil; an armature; a cylindrical cam member; and a locking portion. The cam member is provided with a plurality of locked portions to be locked by the locking portion at different axial positions, such that the plurality of locked portions is formed adjacent to each other in a circumferential direction; the cam member rotates only by a first predetermined angle due to an axial movement of the armature from a first position to a second position, and the cam member further rotates only by a second predetermined angle due to a movement of the armature from the second position to the first position; and when locking of the locking portion is shifted from one of the plurality of locked portions to another locked portion circumferentially adjacent thereto so that the locking portion locks the another locked portion at a different axial position, the second meshing portion is meshed with the first meshing portion.