Abstract: A plurality of light-emitting elements having a structure in which an organic compound layer as a whole is processed with a photolithography technique is provided. A light-emitting element is formed over an insulating layer and includes a first electrode, a second electrode, and an organic compound layer. The organic compound layer is positioned between the first electrode and the second electrode. The organic compound layer includes a light-emitting layer and an electron-injection layer. The electron-injection layer is in contact with the second electrode, and the electron-injection layer includes an organic compound having a basic skeleton and an acid dissociation constant pKa of 1 or more. Layers included in the organic compound layer have substantially the same contour, and the organic compound layer is separated from organic compound layers of the other light-emitting elements of the plurality of light-emitting elements.

Abstract: To provide a light-emitting element in which an organic compound layer can be processed at once by a photolithography technique. A first electrode and an organic compound layer including an electron-injection layer are formed over an insulating surface. The electron-injection layer is the outermost layer of the organic compound layer and contains an organic compound having a basic skeleton and an acid dissociation constant pKa of greater than or equal to 1. A sacrificial layer and a mask are formed over the electron-injection layer and the sacrificial layer is processed into an island shape using the mask. With use of the island-shaped sacrificial layer as a mask, the organic compound layer is processed into an island shape to cover the first electrode. Part of the island-shaped sacrificial layer is removed with an acidic chemical solution to expose the electron-injection layer. A second electrode is formed to cover the electron-injection layer.

Abstract: One embodiment of the present invention provides a secondary battery that can be used in a wide temperature range and is less likely to be affected by the ambient temperature. A highly safe secondary battery is provided. Use of a positive electrode including a fluorine-containing electrolyte enables a secondary battery that can work in a wide temperature range, specifically, in the range of higher than or equal to ?40° C. and lower than or equal to 85° C., preferably higher than or equal to ?40° C. and lower than or equal to 150° C. An incombustible high molecular material or a nonflammable high molecular material is used for a binder. Furthermore, a solid electrolyte material may be included in the positive electrode to increase non-flammability.

Abstract: To keep medium purification efficiency at a high level and prevent deterioration of emission performance.

Abstract: According to a certain embodiment, the semiconductor device includes: an integrated circuit unit; a command control unit configured to execute command control for the integrated circuit unit on the basis of a command, an address, and/or data, each supplied from an outside; an internal state control unit configured to detect an operating state inside the integrated circuit unit, and to provide an internal state signal indicating a first state or a second state in accordance with the detected operating state; and an instruction rejection control unit configured to instruct the internal state control unit to compulsorily turn the internal state signal to the first state if an operation of the integrated circuit unit has not been completed even after a predetermined maximum monitoring time has elapsed, and to instructs the command control unit to reject an input/output operation of the command, the address, and/or the data.

Abstract: Provided is an internal combustion engine control device capable of reducing a control error of the ignition timing as compared with the conventional technique. The internal combustion engine control device of the present disclosure includes a neural network model that receives three or more variables including at least a rotation speed, a load, and another specific variable of an internal combustion engine as inputs and outputs a control amount of the internal combustion engine. The neural network model includes a first neural network model having a reference value of the specific variable as an input and a second neural network model having a current value of the specific variable as an input.

Abstract: A novel light-emitting device is provided. A light-emitting device with high emission efficiency is provided. A light-emitting device with a long lifetime is provided. A light-emitting device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-injection layer, a light-emitting layer, and an electron-transport layer. The hole-injection layer is positioned between the anode and the light-emitting layer. The electron-transport layer is positioned between the light-emitting layer and the cathode. The hole-injection layer contains a first substance and a second substance. The first substance is an organic compound which has a hole-transport property and a HOMO level higher than or equal to ?5.7 eV and lower than or equal to ?5.4 eV. The second substance exhibits an electron-accepting property with respect to the first substance.

Abstract: A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.

Abstract: To provide a method for predicting the c-axis length of a lithium compound crystal structure, a method for building a learning model for predicting a c-axis length, and a system for predicting a crystal structure having the maximum c-axis length. A method for predicting the c-axis length of a crystal structure of a lithium compound containing cobalt, nickel, and manganese includes preparing a descriptor including n values (n is an integer greater than or equal to 0) obtained by converting a crystal structure of the lithium compound in which manganese at any one or more of n sites is substituted by a metal atom among crystal structures of the lithium compound into binary data and a characteristic value of the metal atom; inputting the descriptor into a learned learning model; and outputting a predicted value of c-axis length of an optimized crystal structure and a descriptor corresponding to the optimized crystal structure as an output value of the learning model.

Abstract: A property prediction system for a semiconductor element is provided. The property prediction system includes a memory unit, an input unit, a processing unit, and an arithmetic unit. The processing unit has a function of creating a learning data set from first data stored in the memory unit, a function of creating prediction data from second data supplied from the input unit, a function of converting qualitative data (a material name or a compositional formula) into quantitative data (the properties of an element and a composition), and a function of performing extraction or removal on the first data and the second data. The first data includes step lists of first to m-th semiconductor elements (m is an integer of 2 or more) and the properties of the first to m-th semiconductor elements. The second data includes a step list of an (m+1)-th semiconductor element.

Abstract: A secondary battery that can withstand at least high temperature is achieved by designing the structure of the secondary battery. The secondary battery uses: a positive electrode active material obtained by a formation method including a first step of forming a first mixture by pulverizing magnesium fluoride, lithium fluoride, a nickel source, and an aluminum source and then mixing the pulverized materials with powder of lithium cobalt oxide, and a second step of forming a second mixture by heating the first mixture at a temperature lower than an upper temperature limit of the lithium cobalt oxide; and an electrolyte solution to which LiBOB is added.

Abstract: A steering system includes a steered shaft, a ball screw nut, balls, a housing, a rolling bearing, and a snap ring configured to prevent the rolling bearing from detaching from the ball screw nut. The rolling bearing includes double-row rolling element arrays, an outer ring, a first inner ring, and a second inner ring. The ball screw nut has a receiving portion. The snap ring contacts a side face of the second inner ring to push the second inner ring toward the receiving portion via the first inner ring. A resistance force received from the second outer peripheral fitting surface when the second inner ring moves in the axial direction in a state in which detachment of the rolling bearing is not prevented by the snap ring is smaller than a pushing force with which the snap ring pushes the second inner ring.

Abstract: A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.

Abstract: An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced.

Abstract: A novel light-emitting device is provided. A light-emitting device with high emission efficiency is provided. A light-emitting device with along lifetime is provided. A light-emitting device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-injection layer, a light-emitting layer, and an electron-transport layer. The hole-injection layer is positioned between the anode and the light-emitting layer. The electron-transport layer is positioned between the light-emitting layer and the cathode. The hole-injection layer contains a first substance and a second substance. The first substance is an organic compound which has a hole-transport property and a HOMO level higher than or equal to ?5.7 eV and lower than or equal to ?5.4 eV. The second substance exhibits an electron-accepting property with respect to the first substance.

Abstract: Provided is a positive electrode for a secondary battery, which has a small change in a crystal structure due to charging and discharging and has excellent cycle performance. The positive electrode for a secondary battery includes n positive electrode active material layers (n is an integer greater than or equal to 2), n?1 separation layer(s), and a positive electrode current collector layer. The positive electrode active material layers and the separation layer(s) are alternately stacked. The positive electrode active material layer contains lithium, cobalt, and oxygen. The separation layer contains a titanium compound. Titanium oxide and titanium nitride are preferable as the titanium compound, and titanium oxide is particularly preferable.

Abstract: Provided is an internal combustion engine control device capable of reducing a control error of the ignition timing as compared with the conventional technique. The internal combustion engine control device of the present disclosure includes a neural network model that receives three or more variables including at least a rotation speed, a load, and another specific variable of an internal combustion engine as inputs and outputs a control amount of the internal combustion engine. The neural network model includes a first neural network model having a reference value of the specific variable as an input and a second neural network model having a current value of the specific variable as an input.

Abstract: A property prediction system is provided. An input portion, a processing portion, an arithmetic portion, and an output portion are included; the input portion has a function of supplying the structure of a light-emitting device or the properties of the light-emitting device; the processing portion has a function of generating a learning data set or data that is used for property prediction and a function of quantifying the molecular structure of an organic compound; the arithmetic portion has a function of performing supervised learning on the basis of the learning data set and a function of making an inference of the properties of the light-emitting device from the data on the basis of the learning result of the supervised learning; and the output portion has a function of providing the result of the inference. Thus, the properties of the light-emitting device including a layer containing an organic compound are predicted.

Abstract: A novel method for manufacturing a positive electrode active material is provided. In the method, an acid solution is formed by mixing an aqueous solution containing nickel, cobalt, and manganese with an aqueous solution containing a first additive element; a composite hydroxide containing nickel, cobalt, manganese, and the first additive element is formed by a reaction between the acid solution and an alkaline solution; the composite hydroxide and a lithium source are mixed and heated (first heating) to form a composite oxide; and the composite oxide and a second additive element source are mixed and heated (second heating). The first additive element is at least one of gallium, boron, aluminum, indium, magnesium, and fluorine, and the second additive element is at least one of calcium, gallium, boron, aluminum, indium, magnesium, and fluorine.

Abstract: An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced.