Patents by Inventor Kunihiko Suzuki

Kunihiko Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200111966
    Abstract: A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.
    Type: Application
    Filed: December 5, 2019
    Publication date: April 9, 2020
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi SEO, Nobuharu OHSAWA, Satoko SHITAGAKI, Hideko INOUE, Hiroshi KADOMA, Harue OSAKA, Kunihiko SUZUKI, Yasuhiko TAKEMURA
  • Publication number: 20200098997
    Abstract: A highly reliable light-emitting element having high emission efficiency is provided. The light-emitting element includes a light-emitting layer including a first organic compound and a guest material. The first organic compound has a substituted or unsubstituted carbazole skeleton. In the light-emitting layer, the weight ratio of a hydrocarbon group substitution product in which at least one of hydrogen atoms in the first organic compound is substituted by a hydrocarbon group having 1 to 6 carbon atoms to the first organic compound is greater than 0 and less than or equal to 0.1.
    Type: Application
    Filed: December 19, 2017
    Publication date: March 26, 2020
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takeyoshi WATABE, Satoshi SEO, Nozomi KOMATSU, Ryohei YAMAOKA, Harue OSAKA, Kunihiko SUZUKI, Shunsuke HOSOUMI
  • Patent number: 10593895
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting element is provided which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes, in which a combination of the first organic compound and the second organic compound forms an exciplex (excited complex). The light-emitting element transfers energy by utilizing an overlap between the emission spectrum of the exciplex and the absorption spectrum of the phosphorescent compound and thus has high energy transfer efficiency. Therefore, a light-emitting element having high external quantum efficiency can be obtained.
    Type: Grant
    Filed: March 9, 2017
    Date of Patent: March 17, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Nobuharu Ohsawa, Hideko Inoue, Kunihiko Suzuki
  • Patent number: 10586934
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting element is provided which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes, in which a combination of the first organic compound and the second organic compound forms an exciplex (excited complex). The light-emitting element transfers energy by utilizing an overlap between the emission spectrum of the exciplex and the absorption spectrum of the phosphorescent compound and thus has high energy transfer efficiency. Therefore, a light-emitting element having high external quantum efficiency can be obtained.
    Type: Grant
    Filed: January 30, 2019
    Date of Patent: March 10, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Nobuharu Ohsawa, Hideko Inoue, Kunihiko Suzuki
  • Patent number: 10573829
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting element is provided which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes, in which a combination of the first organic compound and the second organic compound forms an exciplex (excited complex). The light-emitting element transfers energy by utilizing an overlap between the emission spectrum of the exciplex and the absorption spectrum of the phosphorescent compound and thus has high energy transfer efficiency. Therefore, a light-emitting element having high external quantum efficiency can be obtained.
    Type: Grant
    Filed: May 21, 2018
    Date of Patent: February 25, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Nobuharu Ohsawa, Hideko Inoue, Kunihiko Suzuki
  • Patent number: 10559762
    Abstract: To provide a novel fluorescent organic compound (a fluorescent compound). The organic compound is a substance that emits fluorescence and an organic compound (a host material) in which TTA can occur efficiently. In the organic compound, triplet excitons, which do not contribute to light emission, can be efficiently converted into singlet excitons. The use of such an organic compound can increase emission efficiency of a light-emitting element.
    Type: Grant
    Filed: October 4, 2018
    Date of Patent: February 11, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kyoko Takeda, Harue Osaka, Yusuke Takita, Naoaki Hashimoto, Tsunenori Suzuki, Kunihiko Suzuki, Satoshi Seo
  • Publication number: 20200006534
    Abstract: An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced.
    Type: Application
    Filed: September 12, 2019
    Publication date: January 2, 2020
    Inventors: Shunpei YAMAZAKI, Takahiro TSUJI, Kunihiko SUZUKI
  • Patent number: 10505120
    Abstract: A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: December 10, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Seo, Nobuharu Ohsawa, Satoko Shitagaki, Hideko Inoue, Hiroshi Kadoma, Harue Osaka, Kunihiko Suzuki, Yasuhiko Takemura
  • Publication number: 20190368448
    Abstract: A novel control device for an internal combustion engine capable of highly accurately estimating an EGR amount (rate) during the transient state is provided. A first EGR rate is determined using, as an input, a detection signal of an EGR sensor provided on the downstream side of a throttle valve which adjusts the flow rate of a mixed gas of air and EGR gas flowing through an intake pipe, a second EGR rate is estimated by calculating a predetermined equation using, as an input, at least a detection signal of an air flow sensor and an EGR valve opening degree sensor, a third EGR rate is determined by carrying out delay processing on the second EGR rate corresponding to a response delay of the EGR sensor, and the second EGR rate is subjected to learning correction by reflecting a difference between the third EGR rate and the first EGR rate.
    Type: Application
    Filed: December 27, 2017
    Publication date: December 5, 2019
    Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.
    Inventors: Takafumi ARAKAWA, Yoichi IIHOSHI, Kunihiko SUZUKI, Toshio HORI
  • Patent number: 10418466
    Abstract: An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film transistor in which an oxide semiconductor layer is used, the amount of change in threshold voltage of the thin film transistor before and after a BT test is made to be 2 V or less, preferably 1.5 V or less, more preferably 1 V or less, whereby the semiconductor device which has high reliability and stable electric characteristics can be manufactured. In particular, in a display device which is one embodiment of the semiconductor device, a malfunction such as display unevenness due to change in threshold voltage can be reduced.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: September 17, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takahiro Tsuji, Kunihiko Suzuki
  • Patent number: 10403839
    Abstract: Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.
    Type: Grant
    Filed: October 31, 2016
    Date of Patent: September 3, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Nobuharu Ohsawa, Hideko Inoue, Masahiro Takahashi, Kunihiko Suzuki
  • Patent number: 10367160
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having low drive voltage is provided. Provided is a light-emitting element which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes. A combination of the first organic compound and the second organic compound forms an exciplex (excited complex). An emission spectrum of the exciplex overlaps with an absorption band located on the longest wavelength side of an absorption spectrum of the phosphorescent compound. A peak wavelength of the emission spectrum of the exciplex is longer than or equal to a peak wavelength of the absorption band located on the longest wavelength side of the absorption spectrum of the phosphorescent compound.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: July 30, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Satoko Shitagaki, Nobuharu Ohsawa, Hideko Inoue, Kunihiko Suzuki
  • Publication number: 20190189949
    Abstract: Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.
    Type: Application
    Filed: February 25, 2019
    Publication date: June 20, 2019
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Satoko SHITAGAKI, Satoshi SEO, Nobuharu OHSAWA, Hideko INOUE, Masahiro TAKAHASHI, Kunihiko SUZUKI
  • Patent number: 10316429
    Abstract: According to one embodiment, a film forming apparatus includes a process chamber, a placement portion, a susceptor, a cover, a gas source, a heater, and a support portion. The placement portion is provided inside the process chamber. The susceptor is held in an end portion of the placement portion and is capable of placing a substrate. The cover is capable of being placed facing the susceptor inside the process chamber. The gas source is capable of supplying a process gas between the cover and the substrate. The heater is capable of heating the substrate. The support portion is provided inside the process chamber and is capable of supporting the cover at a first position above the susceptor and is capable of separating the cover at a second position which is different from the first position.
    Type: Grant
    Filed: September 6, 2017
    Date of Patent: June 11, 2019
    Assignees: Kabushiki Kaisha Toshiba, NuFlare Technology, Inc.
    Inventors: Shinya Higashi, Kaori Deura, Kunihiko Suzuki, Masayoshi Yajima
  • Publication number: 20190173038
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having low drive voltage is provided. Provided is a light-emitting element which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes. A combination of the first organic compound and the second organic compound forms an exciplex (excited complex). An emission spectrum of the exciplex overlaps with an absorption band located on the longest wavelength side of an absorption spectrum of the phosphorescent compound. A peak wavelength of the emission spectrum of the exciplex is longer than or equal to a peak wavelength of the absorption band located on the longest wavelength side of the absorption spectrum of the phosphorescent compound.
    Type: Application
    Filed: February 11, 2019
    Publication date: June 6, 2019
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Satoshi Seo, Satoko Shitagaki, Nobuharu Ohsawa, Hideko Inoue, Kunihiko Suzuki
  • Publication number: 20190157577
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting element is provided which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes, in which a combination of the first organic compound and the second organic compound forms an exciplex (excited complex). The light-emitting element transfers energy by utilizing an overlap between the emission spectrum of the exciplex and the absorption spectrum of the phosphorescent compound and thus has high energy transfer efficiency. Therefore, a light-emitting element having high external quantum efficiency can be obtained.
    Type: Application
    Filed: January 30, 2019
    Publication date: May 23, 2019
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Satoko SHITAGAKI, Satoshi SEO, Nobuharu OHSAWA, Hideko INOUE, Kunihiko SUZUKI
  • Publication number: 20190115553
    Abstract: A novel light-emitting element or a highly reliable light-emitting element is provided. The light-emitting element includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes at least a light-emitting layer. The light-emitting layer includes at least a first organic compound and a second organic compound. The energy for liberating halogen from a halogen-substituted product of the first organic compound in a radical anion state and in a triplet excited state is less than or equal to 1.00 eV. The amount of halogen-substituted product in the second organic compound is not increased with an increase in driving time of the light-emitting element.
    Type: Application
    Filed: December 10, 2018
    Publication date: April 18, 2019
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Satoshi SEO, Takeyoshi WATABE, Rina NAKAMURA, Harue OSAKA, Ayumi SATO, Kunihiko SUZUKI, Hayato YAMAWAKI
  • Publication number: 20190084003
    Abstract: An object is to provide a novel peeling method and a novel peeling apparatus. A peeling method including a first step of forming a separation layer over a substrate, a second step of forming a layer to be separated over the separation layer, a third step of forming a peeling starting point by separating part of the layer to be separated from the separation layer, and a fourth step of peeling the layer to be separated from the substrate using the peeling starting point. In the fourth step, the substrate temperature is higher than or equal to 60 degrees Celsius and lower than or equal to 90 degrees Celsius.
    Type: Application
    Filed: November 5, 2018
    Publication date: March 21, 2019
    Inventors: Shunpei YAMAZAKI, Kunihiko SUZUKI
  • Patent number: 10237917
    Abstract: A heater according to an embodiment of the present disclosure includes a heater element including a flat heat generating body, a linear slit formed in a linearly opened manner with one end arranged at an outer circumference of the heat generating body and the other end arranged in the turnover portion of the heat generating body, and a turnover portion formed in an opened manner to continue from the other end, an opening diameter of the turnover portion being larger than a slit width of the linear slit, the heater element generating heat by electrification, and a pair of electrodes connected to a predetermined face of the heater element, a voltage being applied on the electrodes during electrification of the heater element.
    Type: Grant
    Filed: March 8, 2016
    Date of Patent: March 19, 2019
    Assignee: NuFlare Technology, Inc.
    Inventors: Hiroshi Furutani, Yuusuke Sato, Kunihiko Suzuki
  • Publication number: 20190036036
    Abstract: To provide a novel fluorescent organic compound (a fluorescent compound). The organic compound is a substance that emits fluorescence and an organic compound (a host material) in which TTA can occur efficiently. In the organic compound, triplet excitons, which do not contribute to light emission, can be efficiently converted into singlet excitons. The use of such an organic compound can increase emission efficiency of a light-emitting element.
    Type: Application
    Filed: October 4, 2018
    Publication date: January 31, 2019
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kyoko Takeda, Harue OSAKA, Yusuke TAKITA, Naoaki HASHIMOTO, Tsunenori SUZUKI, Kunihiko SUZUKI, Satoshi SEO