Abstract: A C49-structured titanium silicide film contains at least a refractory metal having a higher melting point than titanium in the form of a substitutional solid solution, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not less than 20 at %. On silicon, there is formed a titanium film which contains at least a refractory metal having a higher melting point than titanium, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not less than 20 at %. The titanium film is then subjected to a heat treatment in an inert gas atmosphere for causing a silicidation reaction, thereby to form a C49-structured titanium silicide film which contains the above at least a refractory metal in, the form of a substitutional solid solution.

Abstract: A C49-structured titanium silicide film contains at least a refractory metal having a higher melting point than titanium in the form of a substitutional solid solution, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not more than 20 at %. On silicon, there is formed a titanium film which contains at least a refractory metal having a higher melting point than titanium, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not more than 20 at %. The titanium film is then subjected to a heat treatment in an inert gas atmosphere for causing a silicidation reaction, thereby to form a C49-structured titanium silicide film which contains the above at least a refractory metal in the form of a substitutional solid solution.

Abstract: Amorphous silicon layers are formed on an n-type single-crystal/poly-crystal layer and a p-type single-crystal/poly-crystal layer, and titanium is sputtered on the amorphous silicon layers; although the n-type dopant impurity are piled on the n-type single-crystal/poly-crystal layers, the amorphous silicon layers takes the piles of n-type dopant impurity thereinto, and promote the silicidation of the titanium layer.

Abstract: A semiconductor device comprising an insulating film at least partially containing a fluorine-containing film, formed above a semiconductor substrate, and a titanium nitride film formed on the insulating film. The above titanium film functions as a barrier metal film for barriering the diffusion of fluorine (F) atoms.

Abstract: An oxide film is deposited on a semiconductor substrate on which a field oxide film and a gate electrode are formed. The oxide film is etched back to form a first sidewall insulating film made of the oxide film on a side surface of the gate electrode. Then a silicon film is selectively grown on the gate electrode and on the semiconductor substrate. Thereafter a thermal oxide film is formed on a surface of the silicon film by thermally oxidizing. In the step of thermal oxidation, a thin silicon film deposited on a part of the first sidewall insulating film and a part of the field oxide film is fully oxidized. Thereafter, the thermal oxide film is etched back and thereby a second sidewall insulating film made of the thermal oxide film is formed on a side surface of the silicon film.

Abstract: A C49-structured titanium silicide film contains at least a refractory metal having a higher melting point than titanium in the form of a substitutional solid solution, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not less than 20 at %. On silicon, there is formed a titanium film which contains at least a refractory metal having a higher melting point than titanium, wherein a concentration of the refractory metal to a total amount of titanium and the refractory metal is in the range of above 1 at % to not less than 20 at %. The titanium film is then subjected to a heat treatment in an inert gas atmosphere for causing a silicidation reaction, thereby to form a C49-structured titanium silicide film which contains the above at least a refractory metal in the form of a substitutional solid solution.

Abstract: In a method for producing a semiconductor device disclosed herein, a titanium film (131) is formed on a silicon layer and a titanium disilicide film (134) of a C49 structure is formed by the first rapid thermal annealing, followed by removing a titanium nitride film (132). The titanium disilicide film (134) thus formed is then subjected to phase transition to form titanium disilicide film (135a) of a C54 structure, and the titanium-excess titanium silicide film (133) is selectively removed by the second wet etching.

Abstract: A titanium layer is formed by depositing titanium over entire surface of a gate electrode, a P-type silicon substrate, an insulation layer, an oxide layer and so forth. By effecting first RTA (Rapid Thermal Annealing) under nitrogen atmosphere, titanium silicide layer of C49 type structure is formed. At this time, the regions of the titanium layer which are on the oxide layer and the insulation layer and upper part of the region of the titanium layer which is formed on the silicon substrate are reacted with N.sub.2 gas to produce titanium nitride layer. In conjunction therewith, titanium layer on the surface of the insulation layer and the oxide layer is slightly reacted to form titanium silicide thin film. Subsequently, only titanium nitride is selectively removed. Thereafter, under oxygen atmosphere, second RTA is performed at 850.degree. C. for 10 sec. to oxidize the titanium silicide thin film to make it insulative.