Abstract: A photomask provided with a light-shielding coating on a surface of a glass substrate is cleaned with O3 gas solved water to eliminate organic substances adhered on a surface of the photomask (S120). Using an alkaline chemical such as alkaline ionized water or hydrogenated water, the photomask is then cleaned to eliminate contamination (S122). After completion of these cleaning steps, the photomask is dried (S124).

Abstract: A photomask provided with a light-shielding coating on a surface of a glass substrate is cleaned with O3 gas solved water to eliminate organic substances adhered on a surface of the photomask (S120). Using an alkaline chemical such as alkaline ionized water or hydrogenated water, the photomask is then cleaned to eliminate contamination (S122). After completion of these cleaning steps, the photomask is dried (S124).

Abstract: A light shielding film, a halftone film, an etching stopper film and a transparent substrate are dry etched to form a hole penetrating the films and extending in the substrate through a main surface thereof to a prescribed depth. The etching stopper film is formed of a material significantly high in selectivity relative to the substrate under a condition for etching the substrate. This prevents the etching stopper film and the substrate in the step of etching the substrate from being etched to extend a geometry of a pattern in a direction parallel to the substrate's main surface.

Abstract: Photomask blanks are fabricated by forming half-tone film over quartz substrate and causing a half-tone phase shift film to contain impurity becoming a color center by implanting ion at a predetermined depth of the half-tone film by means of ion-implantation. Using the above photomask blanks, a desired pattern is formed within photosensitive resist by applying photosensitive resist over the half-tone film thereover, exposing the resist through use of a desired pattern, and then developing the resist. Through the above photosensitive resist as a mask, the half-tone film is etched to form a predetermined pattern within the half-tone film. The exposed photosensitive resist is removed to fabricate a photomask.

Abstract: A selecting method includes the steps of receiving pattern-forming area 100% region data and unit price data from a mask manufacturer's computer, extracting a 100% code that matches a condition based on the pattern-forming area 100% region data if data are received from computers of at least a predetermined number of mask manufacturers, calculating a pattern-forming area ratio based on a pattern-forming 100% region of the extracted 100% code and a pattern-forming region of the pattern-forming area data, calculating a unit price from a pattern-forming area ratio based on the unit price data and pattern-forming area ratio, and determining a mask manufacturer to which an order is sent based on the calculated unit price.

Abstract: A main object of the present invention is to provide a photo-mask improved to ensure dimension with high accuracy. An actual pattern is provided on a substrate. A monitor mark for ensuring dimension of the actual pattern is also provided on the substrate. The monitor mark is provided with a coarse pattern and a high-density array pattern formed to have a density higher than the coarse pattern.

Abstract: Photomask blanks are fabricated by forming half-tone film over quartz substrate and causing a half-tone phase shift film to contain impurity becoming a color center by implanting ion at a predetermined depth of the half-tone film by means of ion-implantation. Using the above photomask blanks, a desired pattern is formed within photosensitive resist by applying photosensitive resist over the half-tone film thereover, exposing the resist through use of a desired pattern, and then developing the resist. Through the above photosensitive resist as a mask, the half-tone film is etched to form a predetermined pattern within the half-tone film. The exposed photosensitive resist is removed to fabricate a photomask.

Abstract: A completely-light-shielding Cr section of the scribe-line region assumes a light-shielding structure of self-aligned type. A dicing mark section assumes a light-shielding structure of Cr setback type. A pattern section of a device region assumes a light-shielding structure of HT pattern type.

Abstract: Provided are a manufacturing process for a semiconductor device capable of transferring a pattern corrected with respect of optical distortion of an exposure apparatus, a mask, and a manufacturing apparatus for a semiconductor device. The manufacturing process, regarding optical distortion of said exposure apparatus as a variation in reduction rate of a transferred pattern in each of regions, includes: a first step transferring a fundamental pattern formed on a reference photomask for measuring the optical distortion to measure a size of a transferred pattern in a corresponding one of regions; and a second step of, based on a result obtained in said first step, forming a corrected photomask having a pattern corrected in said corresponding one of regions with respect to said optical distortion.

Abstract: A photomask provided with a light-shielding coating on a surface of a glass substrate is cleaned with O3 gas solved water to eliminate organic substances adhered on a surface of the photomask (S120). Using an alkaline chemical such as alkaline ionized water or hydrogenated water, the photomask is then cleaned to eliminate contamination (S122). After completion of these cleaning steps, the photomask is dried (S124).

Abstract: Provided are a manufacturing process for a semiconductor device capable of transferring a pattern corrected with respect of optical distortion of an exposure apparatus, a mask, and a manufacturing apparatus for a semiconductor deavice.

Abstract: Provided are a manufacturing process for a semiconductor device capable of transferring a pattern corrected with respect of optical distortion of an exposure apparatus, a mask, and a manufacturing apparatus for a semiconductor device. The manufacturing process, regarding optical distortion of said exposure apparatus as a variation in reduction rate of a transferred pattern in each of regions, includes: a first step transferring a fundamental pattern formed on a reference photomask for measuring the optical distortion to measure a size of a transferred pattern in a corresponding one of regions; and a second step of, based on a result obtained in said first step, forming a corrected photomask having a pattern corrected in said corresponding one of regions with respect to said optical distortion.

Abstract: A completely-light-shielding Cr section of the scribe-line region assumes a light-shielding structure of self-aligned type. A dicing mark section assumes a light-shielding structure of Cr setback type. A pattern section of a device region assumes a light-shielding structure of HT pattern type.

Abstract: Provided are a manufacturing process for a semiconductor device capable of transferring a pattern corrected with respect of optical distortion of an exposure apparatus, a mask, and a manufacturing apparatus for a semiconductor device.

Abstract: A corrected irradiation region (14) to be irradiated with a laser light under given output conditions to remove an opaque extension defect (13) is set to include: {circumflex over (1)} an irradiation region (14A) containing the opaque extension defect (13) and having widths w1 and w2 and {circumflex over (2)} a pattern repaired region (14B) having the width w2 and extending in the negative direction in a first direction D1 by the absolute value of a quantity of bias offset of repairing &Dgr;w from the connection between the opaque extension defect (13) and the pattern edge (12E). The quantity of correction offset &Dgr;w is set so that the dimensional variation rate of the resist pattern transferred falls within a range permitted for the device quality. Part of the pattern edge (12E) is missing by the width |&Dgr;w| after the irradiation of laser light.

Abstract: A photolithography mask having monitoring marks, which is suitable for correctly monitoring the dimensions of patterns that are intended for transfer, and its manufacturing method. The photolithography mask is manufactured by plotting mask patterns that are designed on a data address unit basis by using a prescribed plotting address unit that is larger the data address unit. Monitoring marks are formed so as to correspond to all plotting grids, respectively, that are necessary for plotting of all mask patterns. Pattern edges plotted by using all different plotting grids are distributed to the monitoring marks, respectively.

Abstract: An apparatus and method for inspecting photomask pattern defects, discriminating true defects from false ones, efficiently detects only the true defects. The apparatus includes a light source; an irradiation section for transmitting light from the light source to a photomask; a light detecting section for detecting the light passing through transparent parts of the photomask; an image processing section for acquiring image data of the pattern according to signals from the light detecting section; a first condition setting section for setting a coordinate threshold that defines a misregistration defect in the pattern; a second condition setting section for setting an area threshold that defines an area defect of the pattern; a testing section that determines whether the coordinates of a pattern feature and the area of the pattern satisfy the thresholds upon comparison to a second pattern; and an output section for outputting a signal indicating a defect only when at least one of the thresholds is exceeded.

Abstract: In a phase shift mask and a method for repairing a defect of a phase shift mask according to the present invention, a phase shifter defective portion in which a portion of a phase shifter portion is missing is formed in a region including a boundary between a light transmitting portion and a phase shifter portion, and phase shifter defective portion is supplemented with a repairing member having substantially the same transmittance as that of phase shifter portion and capable of converting a phase of exposure light by 180.degree.. Thus, a defect of the phase shifter portion generated on or in the vicinity of the boundary between the light transmitting portion and the phase shifter portion can be repaired without impairing a function as a phase shift mask.

Abstract: A method of correcting a pattern defect in a phase shift mask allowing planarization of bump and divot defects in a phase shift mask with high accuracy is disclosed. In the case of a bump defect, the region including the bump defect is irradiated with an FIB and supplied with a deposition gas, thereby forming a planarization film, and then the planarization film is etched back with the FIB. Thereafter, a layer containing ions is removed away using a laser beam. In the case of a divot defect, the region including the divot defect is planarized by application of an SOG film, and then the unnecessary part of the SOG film other than in the region of the divot defect is removed away by etching back to the interface of the SOG film with the FIB and developing the same. Thereafter, the layer containing ions is removed away utilizing a laser beam.

Abstract: A pattern defect correction method of a photomask includes the steps of directing a focused ion beam to scan a small region including a pattern defect after a planarization film is formed on a region including a pattern defect of a phase shift mask to etch the small region. By monitoring a change in the intensity of a secondary signal, the end of an etching process is detected, followed by removal of the planarization film. According to this method, a pattern defect of a phase shift mask which is used in manufacturing an LSI can be corrected in high precision.