Abstract: Disclosed are a scanning electron microscope for cross section observation capable of cutting more accurately a cross section of a specific portion of semiconductor wafer in a shorter time, and a cross section observing method employing such a microscope. The scanning electron microscope includes an SEM column 100, an FIB column 200 mounted together with SEM column 100, and a reflected-electron detector 21 for detecting electrons to be reflected from the semiconductor wafer by scanning with an electron beam 30 from the SEM. Thus, since a process of cutting a cross section to be observed by scanning with an ion beam 31 from FIB column 200 can be observed in real time by employing the reflected electrons of electron beam 30 from SEM column 100, a specific portion of the cross section can be cut more accurately in a shorter time.

Abstract: A mask repair method in which a transparent defect of in a phase shifter pattern is repaired by ion beam etching instead of a shifter pattern film deposition. A portion of the mask substrate below the transparent defect region is etched with an ion beam to a depth such that the phase of light passing through the adjacent transparent pattern regions and the phase of light passing through the etched region are opposite to each other. This mask repairing method enables high-contrast exposure and ensures high working accuracy since the repairing process is based on etching alone.

Abstract: An X-ray mask includes a membrane formed of a material which transmits X-rays, a mask pattern formed on the surface of the membrane, the mask pattern being made of an X-ray absorbing material, and a supporting frame formed of a material which is mechanically deformed by an external signal. The supporting frame supports the membrane. In an exposure method which employs this X-ray mask, the X-ray mask is first disposed above a substrate in alignment therewith. Subsequently, distortion in the mask pattern is corrected by the application of the external signal to the supporting frame of the mask, and the substrate is then irradiated with X-rays through the mask so as to transfer the mask pattern of the mask to the substrate.