Abstract: A resin composition includes a resin or a resin precursor, and a nitrogen-containing aromatic heterocyclic compound. The nitrogen-containing aromatic heterocyclic compound has a structure represented by the following general formula (1), the following general formula (6) or the following general formula (7): In the general formula (1), A1 and A2 each represent a 6-membered nitrogen-containing aromatic heterocyclic ring together with a nitrogen atom, and the 6-membered nitrogen-containing aromatic heterocyclic ring optionally forms a fused ring; and L represents a single bond, or a linking group derived from an aromatic hydrocarbon ring, an aromatic heterocyclic ring, or an alkyl group. The resin composition includes the nitrogen-containing aromatic heterocyclic compound in a range from 0.10 to 30% by mass relative to the resin or the resin precursor.

Abstract: A resin composition includes a resin or a resin precursor, and a nitrogen-containing aromatic heterocyclic compound. The nitrogen-containing aromatic heterocyclic compound has a structure represented by the following general formula (1), the following general formula (6) or the following general formula (7). The resin composition includes the nitrogen-containing aromatic heterocyclic compound in a range from 0.10 to 30% by mass relative to the resin or the resin precursor. In the general formula (1), A1 and A2 each represent a 6-membered nitrogen-containing aromatic heterocyclic ring together with a nitrogen atom, and the 6-membered nitrogen-containing aromatic heterocyclic ring optionally forms a fused ring; and L represents a single bond, or a linking group derived from an aromatic hydrocarbon ring, an aromatic heterocyclic ring, or an alkyl group.

Abstract: Provided are an organic electroluminescent element having a long lifetime and preventing a voltage rise and a decrease in efficiency after driven for a long time, a display and a lighting device both of which include the element. The organic electroluminescent element includes a luminescent layer sandwiched between an anode and a cathode, and a plurality of organic layers including the luminescent layer. The luminescent layer contains a phosphorescent compound and host compounds A and B both of which satisfy the following equations and requirement (11). Host Compound A=X+nR1, Host Compound B=X+mR2; and (11) [HOMO Energy level of Host Compound A]?[HOMO Energy level of Host Compound B]?0.15 eV.

Abstract: When a control circuit has received a first erase command, the control circuit controls performing a first pre-write process to allow a first storage device and a second storage device to have threshold voltages, respectively, both increased, and the control circuit thereafter controls performing an erase process to allow the first storage device and the second storage device to have their respective threshold voltages both decreased to be smaller than a prescribed erase verify level. When the control circuit has received a second erase command, the control circuit controls performing a second pre-write process to allow one of the first storage device and the second storage device to have its threshold voltage increased, and control circuit subsequently controls performing the erase process.

Abstract: An organic electroluminescent element includes a hole injection layer (HI), a first hole transport layer (HT1), a second hole transport layer (HT2), and a light-emitting layer containing a host compound (H) and a phosphorescence emitting dopant compound (D), which are laminated in this order, between and an anode and a cathode. The phosphorescence emitting dopant compound has a partial structure represented by Formula (1): The “highest occupied molecular orbital” HOMO of the second hole transport layer satisfies the expression: ?5.4<HOMO (HT2)<?4.8; and the relationship of triplet excitation energies (T1) between the phosphorescence emitting dopant compound and a hole transport material contained in the second hole transport layer satisfies the expression: T1 (HT2)?T1 (D)>0.1.

Abstract: When a control circuit has received a first erase command, the control circuit controls performing a first pre-write process to allow a first storage device and a second storage device to have threshold voltages, respectively, both increased, and the control circuit thereafter controls performing an erase process to allow the first storage device and the second storage device to have their respective threshold voltages both decreased to be smaller than a prescribed erase verify level. When the control circuit has received a second erase command, the control circuit controls performing a second pre-write process to allow one of the first storage device and the second storage device to have its threshold voltage increased, and control circuit subsequently controls performing the erase process.

Abstract: When a control circuit has received a first erase command, the control circuit controls performing a first pre-write process to allow a first storage device and a second storage device to have threshold voltages, respectively, both increased, and the control circuit thereafter controls performing an erase process to allow the first storage device and the second storage device to have their respective threshold voltages both decreased to be smaller than a prescribed erase verify level. When the control circuit has received a second erase command, the control circuit controls performing a second pre-write process to allow one of the first storage device and the second storage device to have its threshold voltage increased, and control circuit subsequently controls performing the erase process.

Abstract: Disclosed is an organic photoelectric conversion element which has a reverse layer structure wherein at least a first electrode, a photoelectric conversion layer and a second electrode are arranged on a substrate in this order. The organic photoelectric conversion element is characterized in that: the photoelectric conversion layer is a bulk heterojunction layer that is composed of a p-type organic semiconductor material and an n-type organic semiconductor material; and a compound that has a linear or branched fluorinated alkyl group having 6-20 carbon atoms is contained as the p-type organic semiconductor material.

Abstract: When a control circuit has received a first erase command, the control circuit controls performing a first pre-write process to allow a first storage device and a second storage device to have threshold voltages, respectively, both increased, and the control circuit thereafter controls performing an erase process to allow the first storage device and the second storage device to have their respective threshold voltages both decreased to be smaller than a prescribed erase verify level. When the control circuit has received a second erase command, the control circuit controls performing a second pre-write process to allow one of the first storage device and the second storage device to have its threshold voltage increased, and control circuit subsequently controls performing the erase process.

Abstract: The purpose of the present invention is to provide: an organic electroluminescence element having a plurality of light-emitting dopants of different light-emitting wavelengths and emitting white light, the white-light-emitting organic electroluminescence element having excellent longevity, low-voltage driving, and chromatic stability, and also having a few dark spots; as well as an illumination device and a display device that use the element. This organic electroluminescence element contains at least one light-emitting layer sandwiched between a positive electrode and a negative electrode, the organic electroluminescence element characterized in that the light-emitting layer contribution ratio, defined as the ratio ?PL/?EL of the photoluminescence intensity decay rate to the electroluminescence intensity decay rate, is 0.3 to 1.0.

Abstract: An organic electroluminescent element includes a hole injection layer (HI), a first hole transport layer (HT1), a second hole transport layer (HT2), and a light-emitting layer containing a host compound (H) and a phosphorescence emitting dopant compound (D), which are laminated in this order, between and an anode and a cathode. The phosphorescence emitting dopant compound has a partial structure represented by Formula (1): The “highest occupied molecular orbital” HOMO of the second hole transport layer satisfies the expression: ?5.4<HOMO (HT2)<?4.8; and the relationship of triplet excitation energies (T1) between the phosphorescence emitting dopant compound and a hole transport material contained in the second hole transport layer satisfies the expression: T1(HT2)?T1(D)>0.1.

Abstract: The purpose of the present invention is to provide: an organic electroluminescence element having a plurality of light-emitting dopants of different light-emitting wavelengths and emitting white light, the white-light-emitting organic electroluminescence element having excellent longevity, low-voltage driving, and chromatic stability, and also having a few dark spots; as well as an illumination device and a display device that use the element. This organic electroluminescence element contains at least one light-emitting layer sandwiched between a positive electrode and a negative electrode, the organic electroluminescence element characterized in that the light-emitting layer contribution ratio, defined as the ratio ?PL/?EL of the photoluminescence intensity decay rate to the electroluminescence intensity decay rate, is 0.3 to 1.0.

Abstract: Disclosed is an organic photoelectric conversion element which has a reverse layer structure wherein at least a first electrode, a photoelectric conversion layer and a second electrode are arranged on a substrate in this order. The organic photoelectric conversion element is characterized in that: the photoelectric conversion layer is a bulk heterojunction layer that is composed of a p-type organic semiconductor material and an n-type organic semiconductor material; and a compound that has a linear or branched fluorinated alkyl group having 6-20 carbon atoms is contained as the p-type organic semiconductor material.

Abstract: An objective is to provide a planographic printing plate material exhibiting excellent developability, printing durability, together with excellent oxygen-shielding layer adhesion and moisture dependence after exposure. Disclosed is a planographic printing plate material possessing a support provided thereon, a photosensitive layer, wherein the photosensitive layer comprises (A) at least two binder polymers comprising different glass transition points (Tg) from each other, (B) a polymerizable ethylenic double bond-containing compound, and (C) a photopolymerization initiator.

Abstract: Disclosed is a light sensitive planographic printing plate material comprising a support and provided thereon, a light sensitive layer containing a polymerization initiator, a polymerizable ethylenically unsaturated compound, a polymeric binder, and a sensitizing dye, wherein the polymerization initiator is a biimidazole compound, and the sensitizing dye is represented by formula (1),

Abstract: An objective is to provide a planographic printing plate material exhibiting excellent developability, printing durability, together with excellent oxygen-shielding layer adhesion and moisture dependence after exposure. Disclosed is a planographic printing plate material possessing a support provided thereon, a photosensitive layer, wherein the photosensitive layer comprises (A) at least two binder polymers comprising different glass transition points (Tg) from each other, (B) a polymerizable ethylenic double bond-containing compound, and (C) a photopolymerization initiator.

Abstract: A microcomputer with a built-in non-volatile semiconductor memory, which can automatically perform a work of temporarily interrupting automatic writing or automatic erase and accepting an interruption process when an interruption occurs during the automatic writing or automatic erase by using an interrupt request signal for a microcomputer as an external input for controlling automatic writing or automatic erase of a flash memory.

Abstract: Disclosed is a planographic printing plate material comprising a support and provided thereon, a hydrophilic layer and an image formation layer containing heat melt particles or heat fusible particles, wherein the hydrophilic layer contains a starch derivative in an amount of from 0.1 to 10% by weight, or the image formation layer contains a starch derivative in an amount of from 0.1 to 10% by weight.

Abstract: A microcomputer with a built-in non-volatile semiconductor memory, which can automatically perform a work of temporarily interrupting automatic writing or automatic erase and accepting an interruption process when an interruption occurs during the automatic writing or automatic erase by using an interrupt request signal for a microcomputer as an external input for controlling automatic writing or automatic erase of a flash memory.

Abstract: A microcomputer comprises: a flash memory for storing rewriting control F/W and user S/F; a command register for specifying content of rewriting control; a address register to be subjected to rewriting-control; a data register for specifying data to be written; a power-supply pump circuit in the flash memory; and a control signal register for specifying/outputting a control signal to a memory decoder. A CPU of the microcomputer is capable of accessing these four registers to perform writing or reading. A given bit of the control signal register corresponds to a given control signal. A value written to the register becomes a control signal that will be directly supplied to both of the power supply circuit and the memory decoder, in the flash memory, to control them. By rewriting a set value of this control signal register using the rewriting control F/W according to a specified sequence, processing such as “erase” and “program” of the flash memory is performed.