Abstract: The present invention proposes an in-situ freezing machining method for an integrated thin-walled array structure. In the method, the area among cups is cut off first; then, the outer walls of a cup array are machined; and finally, water filling and freezing are carried out, and in-situ freezing machining of the inner walls of the cup array is carried out. Then, hoisting and turning over are carried out, and the area among cavities is cut off; then, the outer walls of a cavity array are machined; and finally, water filling and freezing are carried out, and in-situ freezing machining of the inner walls of the cavity array is carried out. The method realizes in-situ freezing clamping of workpieces, avoids error accumulation caused by repeated installation of a fixture, and can refrigerate efficiently, suppress ambient and cutting thermal interference, and ensure the stability of freezing fixture.

Abstract: An integrated circuit includes a device, a first interconnect structure disposed above the device and a second interconnect structure positioned below the device. The first interconnect structure includes multiple frontside metal layers. The second interconnect structure includes multiple backside metal layers, where each backside metal layer includes metal conductors routed according to diagonal routing. In some embodiments, a backside interconnect structure can include another backside metal layer that includes metal conductors routed according to mixed-Manhattan-diagonal routing. A variety of techniques can be used to route signals between metal conductors in the backside interconnect structure and cells on one or more frontside metal layers.

Abstract: Devices and method for forming a shielding assembly including a first chip package structure sensitive to magnetic interference (MI), a second chip package structure sensitive to electromagnetic interference (EMI), and a shield surrounding sidewalls and top surfaces of the first chip package structure and the second chip package structure, in which the shield is a magnetic shielding material. In some embodiments, the shield may include silicon steel, in some embodiments, the shield may include Mu-metal. The silicon-steel-based or Mu-metal-based shield may provide both EMI and MI protection to multiple chip package structures with various susceptibilities to EMI and MI.

Abstract: The present invention relates to the treatment of herpes simplex virus (HSV) infection using an anti-HSV antibody. In particular, the anti-HSV antibody specifically binds to the glycoprotein D (gD) of herpes simplex virus-1 (HSV-1) and herpes simplex virus-2 (HSV-2). The treatment of the present invention is effective against drug-resistant and/or recurrent HSV infection.

Abstract: A single smart health device able to monitor all physiological aspects of a human body includes a body fluid detection module, a temperature detection module, an electrocardiogram detection module, and a control module. The body fluid detection module tests and detects amounts of biological substances in body fluids. The temperature detection module detects a temperature of the human body. The electrocardiogram detection module detects a heart rate of the human body. The control module is electrically connected to the body fluid detection module, the temperature detection module, and the electrocardiogram detection module, and obtains the detected amounts of biological substances, the detected temperature, and the detected heart rate.

Abstract: The present invention proposes an in-situ freezing machining method for an integrated thin-walled array structure. In the method, the area among cups is cut off first; then, the outer walls of a cup array are machined; and finally, water filling and freezing are carried out, and in-situ freezing machining of the inner walls of the cup array is carried out. Then, hoisting and turning over are carried out, and the area among cavities is cut off; then, the outer walls of a cavity array are machined; and finally, water filling and freezing are carried out, and in-situ freezing machining of the inner walls of the cavity array is carried out. The method realizes in-situ freezing clamping of workpieces, avoids error accumulation caused by repeated installation of a fixture, and can refrigerate efficiently, suppress ambient and cutting thermal interference, and ensure the stability of freezing fixture.

Abstract: Please replace the abstract originally filed with the following: A display panel and a display device. Because the pixel distribution density in a second display subarea (A12) is lower than that in a first display subarea (A11), the quantities of sub-pixels (pix) connected to scanning lines are not completely the same; a sub-pixel row having the greatest quantity of sub-pixels (pix) in the display panel is taken as a reference sub-pixel row, the quantity of the sub-pixels (pix) of the reference sub-pixel row is taken as a reference value, a sub-pixel row having the quantity of sub-pixels (pix) smaller than the reference value is taken as a compensation sub-pixel row, and a scanning line connected to the compensation sub-pixel row is taken as a first scanning line; the display panel is provided with load compensation units corresponding to at least part of the first scanning lines, and the load compensation units are located in the second display subarea.

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate, a fin, and a semiconductor layer. The fin is over the substrate, the semiconductor layer is over the fin, the substrate and the fin are made of different materials, and the fin and the semiconductor layer are made of different materials. The method includes forming a dielectric layer over the semiconductor layer and the fin. The method includes forming a semiconductor structure over a sidewall of the dielectric layer. The method includes removing a first top portion of the dielectric layer over a top surface of the semiconductor layer. The method includes forming a gate over the semiconductor layer, the dielectric layer, and the semiconductor structure.

Abstract: In some embodiments, the present application provides an integrated chip. The integrated chip includes a chip comprising a semiconductor device. A shielding structure abuts the chip. The shielding structure comprises a first horizontal region adjacent to a first horizontal surface of the chip. The first horizontal region comprises a first multilayer structure comprising a first dielectric layer and two or more metal layers. The first dielectric layer is disposed between the two or more metal layers.

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

Abstract: A prediction method of part surface roughness and tool wear based on multi-task learning belong to the file of machining technology. Firstly, the vibration signals in the machining process are collected; next, the part surface roughness and tool wear are measured, and the measured results are corresponding to the vibration signals respectively; secondly, the samples are expanded, the features are extracted and normalized; then, a multi-task prediction model based on deep belief networks (DBN) is constructed, and the part surface roughness and tool wear are taken as the output of the model, and the features are extracted as the input to establish the multi-task DBN prediction model; finally, the vibration signals are input into the multi-task prediction model to predict the surface roughness and tool wear.

Abstract: In some embodiments, the present application provides a method for manufacture a memory device. The method includes forming a multilayer stack including a first magnetic layer and a first dielectric layer and forming another magnetic layer. The multilayer stack and the another magnetic layer are tailored to meet dimensions of a package structure. The package structure includes a chip having a memory cell and an insulating material enveloping the chip, where an outer surface of the package structure comprises the insulating material. The tailored multilayer stack and the tailored another magnetic layer are attached to the outer surface of the package structure.

Abstract: A toolholder matched with the internal jet cooling spindle for cryogenic coolant is mainly composed of a hollow toolholder body, a high-performance thermal insulation structure and a bidirectional sealing structure. They can guide the cryogenic coolant from the spindle to the internal cooling channel of cutting tool and realize the cryogenic thermal insulation and dynamic sealing. The high-performance thermal insulation structure inside the toolholder employs the material with a low thermal conductivity and a low linear expansion coefficient to restrain the low temperature impact of cryogenic coolant on the toolholder and spindle, to ensure the dimensional accuracy and assembly accuracy of the toolholder. The bidirectional sealing structure in the toolholder uses the ultra-low temperature resistant seal rings to prevent the cryogenic coolant from leaking towards the spindle and the cutting tool, to ensure the stability of the coolant transport.

Abstract: A water quality monitoring device and a monitoring method thereof are provided. The water quality monitoring device includes a water tank, a first and a second optical detection devices and a control circuit. The water tank has an accommodating space to carry a liquid. The first optical detection device provides a first light to detect and obtain a first reference light intensity, a first scattered light intensity, and a first penetrating light intensity. The second optical detection device provides a second light to detect and obtain a second reference light intensity, a second scattered light intensity, and a second penetrating light intensity. The control circuit calculates a water quality detection value of the liquid based on the first reference light intensity, the first scattered light intensity, the first penetrating light intensity, the second reference light intensity, the second scattered light intensity, and the second penetrating light intensity.

Abstract: The present invention relates to a process method for conformal processing of a cylindrical shell inner weld seam by a special mobile robot, a laser scanner is used to scan a cylindrical shell inner weld seam to obtain point cloud data of a contour of a weld seam area first. Weld seam feature identification is carried out to each generatrix, and misidentified generatrices are filtered out to obtain weld seam left and right boundaries. An ideal weld seam processing contour is generated conformally according to the appearance of the weld seam area, weld seam coarse grinding is carried out after correction and compensation, and weld seam contour information after coarse grinding is obtained by scanning after the coarse grinding is completed. Process parameters of the grinding are controlled according to an actual weld seam contour, and weld seam fine grinding is carried out to obtain a smooth weld seam contour.

Abstract: Methods and semiconductor structures are provided. A semiconductor structure according to the present disclosure includes a plurality of transistors, an interconnect structure electrically coupled to the plurality of transistors, a metal feature disposed over the interconnect structure and electrically isolated from the plurality of transistors, an insulation layer disposed over the metal feature, and a first redistribution feature and a second redistribution feature disposed over the insulation layer. A space between the first redistribution feature and the second redistribution feature is disposed directly over at least a portion of the metal feature.

Abstract: A method for controlling the IoT devices and an IoT system using the same are provided. The IoT devices includes a trigger device and a functional device. A managing software is executable on a client device. First, a credential is sent to the client from the functional device. Second, a script is received at the trigger device. The script includes the credential, at least one supported command, and at least one supported event. The script is generated at the managing software. The supported command is recognizable to the functional device. When the supported event is triggered at the trigger device, the supported command from the trigger device is received at the functional device. Then, a function of the functional device is performed based on the command, which increases the convenience of operating the system. The trigger device need not recognize the command, which increases the flexibility of the system.

Abstract: The present disclosure provides a method for fabricating a semiconductor structure, including placing a wafer on a chuck, wherein the wafer is surrounded by a focus ring, the focus ring is supported by a first actuator, wherein the first actuator is in a cavity defined by the chuck and the edge ring, wherein the first actuator includes an outer ring disposed in the cavity, a piezoelectric layer apart from a top surface of the cavity, wherein an edge of the piezoelectric layer is fixed by the outer ring, and an inner ring disposed in the chamber at a center portion of the piezoelectric layer, performing plasma etch on a surface of the wafer, and controlling a distance between a gas distribution plate and a top surface of the focus ring to be less than a threshold value by the first actuator.