Kuo-Cheng Ching has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: A semiconductor device includes first channel layers disposed over a substrate, a first source/drain region disposed over the substrate, a gate dielectric layer disposed on and wrapping each of the first channel layers, a gate electrode layer disposed on the gate dielectric layer and wrapping each of the first channel layers, and a liner semiconductor layer disposed between the first channel layers and the first source/drain region.
Abstract: A semiconductor device structure is provided. The semiconductor device structure includes an isolation structure formed over a substrate, and a first stacked wire structure and a second stacked wire structure extending above the isolation structure. The semiconductor device structure includes a dummy fin structure formed over the isolation structure, and the dummy fin structure is between the first stacked wire structure and the second stacked wire structure. The semiconductor device structure also includes a capping layer formed over the dummy fin structure. The isolation structure has a first width, the dummy fin structure has a second width, and the second width is smaller than the first width.
Abstract: A semiconductor device includes a substrate, a first dielectric fin, a second dielectric fin, a semiconductor fin, an epitaxy structure, and a metal gate structure. The first dielectric fin and the second dielectric fin disposed over the substrate. The semiconductor fin is disposed over the substrate, in which the semiconductor fin is between the first dielectric fin and the second dielectric fin. The epitaxy structure covers at least two surfaces of the semiconductor fin, in which the epitaxy structure is in contact with the first dielectric fin and is separated from the second dielectric fin. The metal gate structure crosses the first dielectric fin, the second dielectric fin, and the semiconductor fin.
Abstract: An integrated circuit (IC) device comprises a substrate having a metal-oxide-semiconductor (MOS) region; a gate region disposed over the substrate and in the MOS region; and source/drain features in the MOS region and separated by the gate region. The gate region includes a fin structure and a nanowire over the fin structure. The nanowire extends from the source feature to the drain feature.
Abstract: In a method of manufacturing a semiconductor device, a separation wall made of a dielectric material is formed between two fin structures. A dummy gate structure is formed over the separation wall and the two fin structures. An interlayer dielectric (ILD) layer is formed over the dummy gate structure. An upper portion of the ILD layer is removed, thereby exposing the dummy gate structure. The dummy gate structure is replaced with a metal gate structure. A planarization operation is performed to expose the separation wall, thereby dividing the metal gate structure into a first gate structure and a second gate structure. The first gate structure and the second gate structure are separated by the separation wall.
December 14, 2020
May 6, 2021
Kuo-Cheng CHING, Chih-Hao WANG, Chih-Liang CHEN, Shi Ning JU
Abstract: Examples of an integrated circuit with an interconnect structure that includes a buried interconnect conductor and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a substrate that includes a plurality of fins extending from a remainder of the substrate. A spacer layer is formed between the plurality of fins, and a buried interconnect conductor is formed on the spacer layer between the plurality of fins. A set of capping layers is formed on the buried interconnect conductor between the plurality of fins. A contact recess is etched through the set of capping layers that exposes the buried interconnect conductor, and a contact is formed in the contact recess that is electrically coupled to the buried interconnect conductor.
Abstract: A method includes forming a first semiconductor layer over a substrate. A second semiconductor layer is formed over the first semiconductor layer. The first semiconductor layer and the second semiconductor layer are etched to form a fin structure that extends from the substrate. The fin structure has a remaining portion of first semiconductor layer and a remaining portion of the second semiconductor layer atop the remaining portion of the first semiconductor layer. A capping layer is formed to wrap around three sides of the fin structure. At least a portion of the capping layer and at least a portion of the remaining portion of the second semiconductor layer in the fin structure are oxidized to form an oxide layer wrapping around three sides of the fin structure.
Abstract: Provided are FinFET devices and methods of forming the same. A FinFET device includes a substrate, a first gate strip and a second gate strip. The substrate has at least one first fin in a first region, at least one second fin in a second region and an isolation layer covering lower portions of the first and second fins. The first fin includes a first material layer and a second material layer over the first material layer, and the interface between the first material layer and the second material layer is uneven. The first gate strip is disposed across the first fin. The second gate strip is disposed across the second fin.
Abstract: The present disclosure describes semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate and a gate structure over the substrate, where the gate structure can include two opposing spacers, a dielectric layer formed on side surfaces of the two opposing spacers, and a gate metal stack formed over the dielectric layer. A top surface of the gate metal stack can be below a top surface of the dielectric layer. An example benefit of the semiconductor structure is to improve structure integrity of tight-pitch transistors in integrated circuits.
Abstract: A semiconductor device includes a first device fin and a second device fin. A first source/drain component is epitaxially grown over the first device fin. A second source/drain component is epitaxially grown over the second device fin. A first dummy fin structure is disposed between the first device fin and the second device fin. A gate structure partially wraps around the first device fin, the second device fin, and the first dummy fin structure. A first portion of the first dummy fin structure is disposed between the first source/drain component and the second source/drain component and outside the gate structure. A second portion of the first dummy fin structure is disposed underneath the gate structure. The first portion of the first dummy fin structure and the second portion of the first dummy fin structure have different physical characteristics.
Abstract: A semiconductor device includes a substrate, a first semiconductor fin and a second semiconductor fin, a gate structure, a shallow trench isolation (STI) oxide, and a dielectric layer. The first semiconductor fin and a second semiconductor fin extend upwardly from the substrate. The gate structure extends across the first and second semiconductor fins. The shallow trench isolation (STI) oxide has a horizontal portion extending along a top surface of the substrate and vertical portions extending upwardly from the horizontal portion along the first and second semiconductor fins. The dielectric layer has a horizontal portion extending along a top surface of the horizontal portion of the STI oxide and vertical portions extending upwardly from the horizontal portion of the dielectric layer to a position higher than top ends of the vertical portions of the STI oxide.
Abstract: A method for fabricating a semiconductor device having a substantially undoped channel region includes performing an ion implantation into a substrate, depositing a first epitaxial layer over the substrate, and depositing a second epitaxial layer over the first epitaxial layer. In various examples, a plurality of fins is formed extending from the substrate. Each of the plurality of fins includes a portion of the ion implanted substrate, a portion of the first epitaxial layer, and a portion of the second epitaxial layer. In some embodiments, the portion of the second epitaxial layer of each of the plurality of fins includes an undoped channel region. In various embodiments, the portion of the first epitaxial layer of each of the plurality of fins is oxidized.
Abstract: A semiconductor device is provided. The semiconductor device includes a plurality of channel layers stacked over a semiconductor substrate and spaced apart from one another, a source/drain structure adjoining the plurality of channel layers, a gate structure wrapping around the plurality of channel layers, and a first inner spacer between the gate structure and the source/drain structure and between the plurality of channel layers. The first inner spacer is made of an oxide of a semiconductor material.
Abstract: Methods are disclosed herein for fabricating integrated circuit devices, such as fin-like field-effect transistors (FinFETs), and disclosed are the associated devices. An exemplary method includes forming a first semiconductor material layer over a fin portion of a substrate; forming a second semiconductor material layer over the first semiconductor material layer; and converting a portion of the first semiconductor material layer to a first semiconductor oxide layer. The fin portion of the substrate, the first semiconductor material layer, the first semiconductor oxide layer, and the second semiconductor material layer form a fin. The method further includes forming a gate stack overwrapping the fin.
Abstract: A method includes receiving a substrate; forming on the substrate a semiconductor fin; an isolation structure surrounding the semiconductor fin; and first and second dielectric fins above the isolation structure and sandwiching the semiconductor fin; depositing a spacer feature filling spaces between the semiconductor fin and the first and second dielectric fins; performing an etching process to recess the semiconductor fin, resulting in a trench between portions of the spacer feature; and epitaxially growing a semiconductor material in the trench.
Abstract: FinFET patterning methods are disclosed for achieving fin width uniformity. An exemplary method includes forming a mandrel layer over a substrate. A first cut removes a portion of the mandrel layer, leaving a mandrel feature disposed directly adjacent to a dummy mandrel feature. The substrate is etched using the mandrel feature and the dummy mandrel feature as an etch mask, forming a dummy fin feature and an active fin feature separated by a first spacing along a first direction. A second cut removes a portion of the dummy fin feature and a portion of the active fin feature, forming dummy fins separated by a second spacing and active fins separated by the second spacing. The second spacing is along a second direction substantially perpendicular to the first direction. A third cut removes the dummy fins, forming fin openings, which are filled with a dielectric material to form dielectric fins.
Abstract: A method of fabricating a semiconductor device includes forming a fin extruding from a substrate, the fin having a plurality of sacrificial layers and a plurality of channel layers, wherein the sacrificial layers and the channel layers are alternately arranged; removing a portion of the sacrificial layers from a channel region of the fin; depositing a spacer material in areas from which the portion of the sacrificial layers have been removed; selectively removing a portion of the spacer material, thereby exposing the channel layers in the channel region of the fin, wherein other portions of the spacer material remain as a spacer feature; and forming a gate structure engaging the exposed channel layers.
Abstract: A semiconductor device includes a source/drain feature disposed over a substrate. The source/drain feature includes a first nanowire, a second nanowire disposed over the first nanowire, a cladding layer disposed over the first nanowire and the second nanowire and a spacer layer extending from the first nanowire to the second nanowire. The device also includes a conductive feature disposed directly on the source/drain feature such that the conductive feature physically contacts the cladding layer and the spacer layer.
October 16, 2020
February 18, 2021
Kuo-Cheng Ching, Ching-Fang Huang, Wen-Hsing Hsieh, Ying-Keung Leung, Chih-Hao Wang, Carlos H. Diaz
Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a fin structure on a substrate; a first gate stack and a second gate stack formed on the fin structure; a dielectric material layer disposed on the first and second gate stacks, wherein the dielectric layer includes a first portion disposed on a sidewall of the first gate stack with a first thickness and a second portion disposed on a sidewall of the second gate stack with a second thickness greater than the first thickness; a first gate spacer disposed on the first portion of the dielectric material layer; and a second gate spacer disposed on the second portion of the dielectric material layer.
October 26, 2020
February 11, 2021
Kuo-Cheng Ching, Ying-Keung Leung, Chi On Chui
Abstract: Methods for manufacturing semiconductor structures are provided. The method includes alternately stacking sacrificial layers and semiconductor layers over a substrate to form a semiconductor stack and forming a first mask structure and a second mask structure over the semiconductor stack. In addition, a width of the first mask structure is substantially equal to a width of the second mask structure. The method further includes forming spacers on sidewalls of the second mask structure and patterning the semiconductor stack to form a first fin structure overlapping the first mask structure and a second fin structure overlapping the second mask structure and the spacers. In addition, the first fin structure has a first width and the second fin structure has a second width different from the first width. The method further includes removing the sacrificial layers to form first nanostructures and second nanostructures.