Abstract: A touch-sensing electrode structure has a plurality of electrode units. Each of the electrode units includes at least one first electrode and at least one second electrode. The second electrode is formed in an area not overlapping the first electrode, and the first electrode has a first part and a second part. The second electrode is adjacent to the first part of the first electrode and spaced apart the first part of the first electrode by a first interval, the second part of the first electrode is adjacent to the second electrode and spaced apart the second electrode by a second interval, and a width of the second interval is not equal to a width of the first interval.

Abstract: A method for enhance lightness of p-type nitride group compound L.E.D. is disclosed. The present invention, firstly, the p-type GaN semiconductor layer is provided, then, the different thickness and coverage for titanium metal are coated on the p-type GaN semiconductor layer. Next, the activation process is carried out in the heating tube under the nitrogen gas and quite high temperature, about certain minutes. Finally, The titanium metal is removed after the activation process, therefore the carrier concentration can be selectively changed, in order to enhance lightness for p-type nitride group compound L.E.D.