Abstract: A method for preventing contamination in a plasma process chamber when the primary heating means for the chamber is turned off is provided. In the method, a heated gas is flown over the top chamber lid of the plasma process chamber. A suitable heated gas can be nitrogen gas that is heated to a temperature between about 100° C. and about 150° C.

Abstract: A method and an apparatus for preventing contamination in a plasma process chamber when the primary heating means for the chamber is turned off is provided. In the method, a heated gas is flown over the top chamber lid of the plasma process chamber. A suitable heated gas can be nitrogen gas that is heated to a temperature between about 100° C and about 150° C. The present invention is further directed to an apparatus of a plasma process chamber that is equipped with a primary heating means and an auxiliary heating means. The auxiliary heating means is turned on as soon as the primary heating means is turned off such that a heated gas is flown onto the top chamber lid, thus preventing contaminating particles from falling off the chamber wall and preventing contamination of a wafer situated inside the chamber.

Abstract: A method for alignment to an alignment mark array within a patterned electronic material layer, formed on a substrate employed in a microelectronics fabrication, with improved registration accuracy of a subsequent step-and-repeat photomask pattern. There is first provided a substrate upon which is formed a patterned microelectronics layer containing an alignment mark array. There is then formed over the substrate and patterned layer, covering over the alignment marks, a subsequent layer or layers which may be of opaque material. In order to align properly a patterned photomask for patterning the overlying layer by means of conventional photolithography, the alignment mark array is located by first scanning with a laser light source contained within a step-and-repeat apparatus containing the patterned photomask and detecting the optical radiation signal scattered from the alignment mark array.

Abstract: A method for making long focal length micro-lens for color filters in CMOS image sensor applications and device made by the method are described. In the method, a layer of micro-lens material is first spin coated on top of a color filter, patterned by a photolithographic method into at least four discrete regions, and preferably at least nine discrete regions for each micro-lens with a pre-set spacing therein between. The discrete regions allow a smaller volume of micro-lens material to be used for forming the micro-lens in a subsequent reflow process. The micro-lens formed by the present invention novel method has a focal length of at least 7 &mgr;m, and preferably at least 10 &mgr;m such that a 0.35 &mgr;m technology CMOS image sensor utilizing two or three layers of metal conductors can be formed by the present invention method.

Abstract: Within both a method for fabricating an optoelectronic microelectronic fabrication and the optoelectronic microelectronic fabrication fabricated in accord with the method for fabricating the optoelectronic microelectronic fabrication there is first provided a substrate having formed therein a minimum of one photoactive region which is sensitive to infrared radiation. There is also formed over the substrate and in registration with the minimum of one optically active region a minimum of one microlens layer. Similarly, there is also formed interposed between the substrate and the minimum of one microlens layer an infrared filter layer, wherein the infrared filter is not formed contacting the substrate. The method provides that the optoelectronic microelectronic fabrication is fabricated with enhanced optical sensitivity.

Abstract: A microelectronic method is described for optimizing the fabrication of optical and semiconductor array structures for high efficiency color image formation in solid-state cameras. Disclosed is an ordered fabrication sequence in which microlens formation precedes color filter layer formation to enable increased image light collection efficiency, to encapsulate and protect the microlens elements from chemical and thermal processing damage, to minimize topographical underlayer variations which would axially misalign or otherwise aberrate microlens elements formed on non-planar surfaces, and, to complete the most difficult steps early in the process to minimize rework and scrap. A CMOS, CID, or CCD optoelectronic configuration is formed by photolithographically patterning a planar-array of photodiodes on a Silicon or other III-V, II-VI, or compound semiconductor substrate.

Abstract: A microelectronic method is described for optimizing the fabrication of optical and semiconductor array structures for high efficiency color image formation in solid-state cameras. Disclosed is an ordered fabrication sequence in which microlens formation precedes color filter layer formation to enable increased image light collection efficiency, to encapsulate and protect the microlens elements from chemical and thermal processing damage, to minimize topographical underlayer variations which would axially misalign or otherwise aberrate microlens elements formed on non-planar surfaces, and, to complete the most difficult steps early in the process to minimize rework and scrap. A CMOS, CID, or CCD optoelectronic configuration is formed by photolithographically patterning a planar-array of photodiodes on a Silicon or other III-V, II-VI, or compound semiconductor substrate.

Abstract: The present invention discloses an exhaust gas conduit for feeding exhaust gases to a scrubber wherein the conduit is equipped with a self-cleaning device mounted inside the conduit body adjacent to an outlet end of the conduit for dispensing a cleaning solvent onto the inside wall of the outlet end of the conduit such that solid depositions on the inside wall can be avoided. The present invention is also directed to a method for preventing solid depositions in an exhaust gas inlet port to a wet scrubber by utilizing a self-cleaning device mounted in a conduit adjacent to an outlet end of the exhaust conduit and by dispensing a cleaning solvent through the self-cleaning device and spraying the solvent onto an inside wall of the outlet end of the conduit to prevent the formation of solid depositions on the inside wall.

Abstract: A wet chemical process tank for processing semiconductor wafers equipped with a specially designed fluid dispenser positioned at the bottom of the tank where the dispenser has a fluid dispensing member having an elongated body connected on at least one end to at least one support member for stabilizing the member and a fluid passage therein in fluid communication with a plurality of openings provided on at least one of the vertical sides of the member such that a fluid may only exit the member in a horizontal direction so that bubbles generated do not directly contact the semiconductor wafers suspended at the center of the tank.

Abstract: A wet chemical treatment system for processing semiconductor wafers that does not have the problem of cracking or other damages occurring in the system during a cleaning process where a strong acid and water are mixed and pressure and heat are generated. The system includes an additional filing system such that only an outer tank for the processing liquid is filled after the system is cleaned so that pressure and heat generated by the reaction between acid and water can be released into an empty inner tank and thus avoiding damages caused by the heat and pressure. A method for cleaning such system is further disclosed.