Abstract: A semiconductor device according to embodiments of the present disclosure includes a first die including a first bonding layer and a second die including a second hybrid bonding layer. The first bonding layer includes a first dielectric layer and a first metal coil embedded in the first dielectric layer. The second bonding layer includes a second dielectric layer and a second metal coil embedded in the second dielectric layer. The second hybrid bonding layer is bonded to the first hybrid bonding layer such that the first dielectric layer is bonded to the second dielectric layer and the first metal coil is bonded to the second metal coil.

Abstract: A device for forming a conductive powder includes a reaction chamber configured to receive a conductive powder precursor gas, an inert gas and a hydrogen gas. The device further includes a radio frequency (RF) power unit configured to ignite a plasma using the inert gas and the hydrogen gas, wherein the plasma is usable to reduce, by a reduction reaction, the conductive powder precursor gas to form the conductive powder. The device further includes powder collecting cells configured to separate the conductive powder based on particle size. The device further includes a solvent inlet configured to provide a solvent to the powder collecting cells for dispersing the conductive powder in a solvent.

Abstract: A method of forming a conductive powder includes reducing, by a reduction reaction, a conductive powder precursor gas using a plasma to form the conductive powder. The method further includes filtering the conductive powder based on particle size. The method further includes dispersing a portion of the conductive powder having a particle size below a threshold value in a fluid.

Abstract: A substrate handling device includes a substrate reception area defined by an edge. The substrate reception area includes a planar surface, wherein the edge extends upward from the planar surface. The substrate reception area further includes a plurality of contact structures extending upwards from the planar surface, wherein a first contact structure of the plurality of contact structures directly contacts a side surface of the edge, and a second contact structure of the plurality of contact structures is separated from the edge. The substrate reception area and the planar surface include a first material. At least one contact structure of the plurality of contact structures includes a second material different from the first material, and the second material has a hardness aligned to a hardness of a substrate material.

Abstract: A method for forming a semiconductor structure is provided. The method includes depositing a hard mask layer over a substrate. The method further includes depositing a silver precursor layer over the hard mask layer. The method further includes exposing portions of the silver precursor layer to a radiation, the radiation causing a reduction of silver ions in the irradiated portions of the silver precursor layer. The method further includes removing non-irradiated portions of the silver precursor layer, resulting in a plurality of silver seed structures.

Abstract: A substrate handling device includes a substrate reception area defined by an edge. The substrate reception area includes a planar surface, wherein the edge extends upward from the planar surface. The substrate reception area further includes a plurality of contact structures extending upwards from the planar surface, wherein a first contact structure of the plurality of contact structures directly contacts a side surface of the edge, a second contact structure of the plurality of contact structures separated from the edge, a shape of the first contact structure is different from a shape of the second contact structure. The substrate reception area and the planar surface include a first material. Each contact structure of the plurality of contact structures includes a second material different from the first material, and the second material has a hardness aligned to a hardness of a substrate material.

Abstract: A method for forming a semiconductor structure is provided. The method includes depositing a hard mask layer over a substrate. The method further includes depositing a silver precursor layer over the hard mask layer. The method further includes exposing portions of the silver precursor layer to a radiation, the radiation causing a reduction of silver ions in the irradiated portions of the silver precursor layer. The method further includes removing non-irradiated portions of the silver precursor layer, resulting in a plurality of silver seed structures.

Abstract: A gamma ray generator includes a rotational shaft, a plurality of holders and a plurality of gamma ray sources. The holders are connected to the rotational shaft. The gamma ray sources are disposed in the holders respectively, wherein the holders respectively have an upper portion and a lower portion connecting to the upper portion, and the gamma ray source is placed at an interface between the upper portion and the lower portion.

Abstract: A gamma ray generator includes a rotational shaft, a plurality of holders and a plurality of gamma ray sources. The holders are connected to the rotational shaft. The gamma ray sources are disposed in the holders respectively, wherein the holders respectively have an upper portion and a lower portion connecting to the upper portion, and the gamma ray source is placed at an interface between the upper portion and the lower portion.

Abstract: A substrate handling device includes a substrate reception area defined by an edge. The substrate reception area includes a planar surface, wherein the edge extends upward from the planar surface. The substrate reception area further includes a plurality of contact structures extending upwards from the planar surface, wherein a first contact structure of the plurality of contact structures directly contacts a side surface of the edge, a second contact structure of the plurality of contact structures separated from the edge, a shape of the first contact structure is different from a shape of the second contact structure. The substrate reception area and the planar surface include a first material. Each contact structure of the plurality of contact structures includes a second material different from the first material, and the second material has a hardness aligned to a hardness of a substrate material.

Abstract: A gamma ray generator includes a plate, a plurality of holes and a plurality of gamma ray sources. The plate is configured to rotate along a rotational axis. The holes are disposed in the plate, and the holes are arranged in a matrix. The gamma ray sources are respectively placed in the holes.

Abstract: A method of aligning a substrate contact material to a substrate material includes determining a hardness of a substrate material. The method further includes matching a hardness of a substrate contact material to the hardness of the substrate material. The method further includes adding the substrate contact material to a plurality of contact structures of a substrate handling device, wherein the substrate handling device comprises an edge and a planar surface, a first contact structure of the plurality of contact structures extends from the edge, and a second contact structure of the plurality of contact structures extends from the planar surface.

Abstract: A method of patterning a material layer includes the following steps. A first material layer is formed over a substrate, and the first material layer includes a first metal compound. Through a first photomask, portions of the first material layer is exposed with a gamma ray, wherein a first metal ion of the first metal compound in the portions of the first material layer is chemically reduced to a first metal grain. Other portions of the first material layer are removed to form a plurality of first hard mask patterns including the first metal grain.

Abstract: A photomask includes a patterned photomask plate and a supporting member. The patterned photomask plate has a pattern region and a peripheral region surrounding the pattern region. The patterned photomask plate includes a plurality of openings in the pattern region. The supporting member directly abuts the patterned photomask plate and is in a peripheral region of the patterned photomask plate. The supporting member is formed from a different material than the patterned photomask plate.

Abstract: A transistor includes a silicon germanium layer, a gate stack, and source and drain features. The silicon germanium layer has a channel region. The silicon germanium layer has a first silicon-to-germanium ratio. The gate stack is disposed over the channel region of the silicon germanium layer and includes a silicon germanium oxide layer over and in contact with the channel region of the silicon germanium layer, a high-? dielectric layer over the silicon germanium oxide layer, and a gate electrode over the high-? dielectric layer. The silicon germanium oxide layer has a second silicon-to-germanium ratio, and the second silicon-to-germanium ratio is substantially the same as the first silicon-to-germanium ratio.

Abstract: A device includes a non-insulator structure, a first dielectric layer, and a first conductive feature. The first dielectric layer is over the non-insulator structure. The first conductive feature is in the first dielectric layer and includes carbon nano-tubes. The first catalyst layer is between the first conductive feature and the non-insulator structure. A top of the first catalyst layer is lower than a top of the first conductive feature.

Abstract: A semiconductor integrated circuit (IC) including a first fin structure having a first aqueous soluble channel layer. The semiconductor IC includes a first gate structure over the first aqueous soluble channel layer, wherein the first gate structure includes a first oxide film directly contacting the first aqueous soluble channel layer, and the first oxide film includes a first material. The semiconductor IC includes a first spacer along the first gate structure, wherein a bottom surface of the first spacer is above an interface between the first oxide layer and the first aqueous soluble channel layer. The semiconductor IC includes a second fin structure having a second aqueous soluble channel layer. The semiconductor IC includes a second gate structure over the second aqueous channel layer, wherein the second gate structure includes a second oxide film directly contacting the second aqueous soluble channel layer, the second oxide film includes a second material.

Abstract: A gamma ray generator includes a plate, a plurality of holes and a plurality of gamma ray sources. The plate is configured to rotate along a rotational axis. The holes are disposed in the plate, and the holes are arranged in a matrix. The gamma ray sources are respectively placed in the holes.

Abstract: A method for forming a semiconductor structure is provided. The method includes depositing a hard mask layer over a substrate. The method further includes depositing a silver precursor layer over the hard mask layer. The method further includes exposing portions of the silver precursor layer to a radiation, the radiation causing a reduction of silver ions in the irradiated portions of the silver precursor layer. The method further includes removing non-irradiated portions of the silver precursor layer, resulting in a plurality of silver seed structures.

Abstract: A method including forming a first insulating film over a first fin structure. The method further includes removing the first insulating film to expose a portion of the first fin structure. The method further includes forming a first oxide film over the exposed portion of the first fin structure using a non-aqueous solvent-based chemical.