Abstract: A packaged micro-electro-mechanical system (MEMS) device (100) comprises a circuitry chip (101) attached to the pad (110) of a substrate with leads (111), and a MEMS (150) vertically attached to the chip surface by a layer (140) of low modulus silicone compound. On the chip surface, the MEMS device is surrounded by a polyimide ring (130) with a surface phobic to silicone compounds. A dome-shaped glob (160) of cured low modulus silicone material covers the MEMS and the MEMS terminal bonding wire spans (180); the glob is restricted to the chip surface area inside the polyimide ring and has a surface non-adhesive to epoxy-based molding compounds. A package (190) of polymeric molding compound encapsulates the vertical assembly of the glob embedding the MEMS, the circuitry chip, and portions of the substrate; the molding compound is non-adhering to the glob surface yet adhering to all other surfaces.

Abstract: A packaged micro-electro-mechanical system (MEMS) device (100) comprises a circuitry chip (101) attached to the pad (110) of a substrate with leads (111), and a MEMS (150) vertically attached to the chip surface by a layer (140) of low modulus silicone compound. On the chip surface, the MEMS device is surrounded by a polyimide ring (130) with a surface phobic to silicone compounds. A dome-shaped glob (160) of cured low modulus silicone material covers the MEMS and the MEMS terminal bonding wire spans (180); the glob is restricted to the chip surface area inside the polyimide ring and has a surface non-adhesive to epoxy-based molding compounds. A package (190) of polymeric molding compound encapsulates the vertical assembly of the glob embedding the MEMS, the circuitry chip, and portions of the substrate; the molding compound is non-adhering to the glob surface yet adhering to all other surfaces.

Abstract: A floating die package including a cavity formed through sublimation of a sacrificial die encapsulant and sublimation or separation of die attach materials after molding assembly. A pinhole vent in the molding structure is provided as a sublimation path to allow gases to escape, whereby the die or die stack is released from the substrate and suspended in the cavity by the bond wires only.

Abstract: An integrated circuit die may be fabricating to have a plurality of contacts. A metal post may be formed on each of the plurality of contacts. A plurality of bumps may be formed on a plurality of contact regions of a leadframe or on the posts, in which the plurality of bumps are formed with a material that includes metal nanoparticles. The IC die may be attached to the leadframe by aligning the metal posts to the leadframe and sintering the metal nanoparticles in the plurality of bumps to form a sintered metal bond between each metal post and corresponding contact region of the leadframe.

Abstract: A packaged micro-electro-mechanical system (MEMS) device (100) comprises a circuitry chip (101) attached to the pad (110) of a substrate with leads (111), and a MEMS (150) vertically attached to the chip surface by a layer (140) of low modulus silicone compound. On the chip surface, the MEMS device is surrounded by a polyimide ring (130) with a surface phobic to silicone compounds. A dome-shaped glob (160) of cured low modulus silicone material covers the MEMS and the MEMS terminal bonding wire spans (180); the glob is restricted to the chip surface area inside the polyimide ring and has a surface non-adhesive to epoxy-based molding compounds. A package (190) of polymeric molding compound encapsulates the vertical assembly of the glob embedding the MEMS, the circuitry chip, and portions of the substrate; the molding compound is non-adhering to the glob surface yet adhering to all other surfaces.

Abstract: A method of attaching an IC wafer having a plurality of copper pillars (“CuP's) projecting from one face thereof to a substrate having a plurality of contact pads on one face thereof including applying a film having a substantial amount of filler particles therein to the one face of the wafer; applying an a-stage resin having substantially no filler particles therein to the one face of the substrate; and interfacing the film with the a-stage resin.

Abstract: A method of attaching an IC wafer having a plurality of copper pillars (“CuP's) projecting from one face thereof to a substrate having a plurality of contact pads on one face thereof including applying a film having a substantial amount of filler particles therein to the one face of the wafer; applying an a-stage resin having substantially no filler particles therein to the one face of the substrate; and interfacing the film with the a-stage resin.

Abstract: A method of forming a stackable plasma cleaned via package includes forming interconnection balls on terminals. The interconnection balls are encapsulated in a package body, e.g., molding compound. Via apertures are formed through the package body to expose the interconnection balls, wherein a contamination is formed on the interconnection balls. The contamination is removed using a plasma cleaning process. By removing the contamination, robust reflow of the interconnection balls is insured thus maximizing yield. Further, the plasma cleaning process is a cost efficient high volume process with no adverse effect on package reliability.

Abstract: A semiconductor device with a first (101) and a second (111) semiconductor chip assembled on an insulating flexible interposer (120). The interposer, preferably about 25 to 50 ?m thick, has conductive traces (121), a central planar rectangular area and on each side of the rectangle a wing bent at an angle from the central plane. The central area has metal studs (122, 123) on the top and the bottom surface, which match the terminals of the chips, further conductive vias of a pitch center-to-center about 50 ?m or less. The side wings have contact pads (130) with metallic connectors (131) on the bottom surface; the connectors may be solder balls, metal studs, or anisotropic conductive films. The second chip is adhesively attached to a substrate, whereby the interposer faces away from the substrate. The interposer side wings have a convex bending (150) downwardly along the second chip and a concave bending (151) over the substrate; the side wing connectors are attached to the matching substrate sites.

Abstract: A semiconductor device with a first (101) and a second (111) semiconductor chip assembled on an insulating flexible interposer (120). The interposer, preferably about 25 to 50 ?m thick, has conductive traces (121), a central planar rectangular area and on each side of the rectangle a wing bent at an angle from the central plane. The central area has metal studs (122, 123) on the top and the bottom surface, which match the terminals of the chips, further conductive vias of a pitch center-to-center about 50 ?m or less. The side wings have contact pads (130) with metallic connectors (131) on the bottom surface; the connectors may be solder balls, metal studs, or anisotropic conductive films. The second chip is adhesively attached to a substrate, whereby the interposer faces away from the substrate. The interposer side wings have a convex bending (150) downwardly along the second chip and a concave bending (151) over the substrate; the side wing connectors are attached to the matching substrate sites.

Abstract: A process flow employing a liquid cleaning agent (510) such as flux to penetrate the interface between the glassy coats (402) and the surface of metal (120) and to delaminate the coats from the metal, and then, at elevated temperatures, to use the agent's vapor pressure to break up the glassy coats into smaller pieces (403). The glassy coats are prevented by their low density to penetrate into the molten solder. Finally, at ambient temperature, the floating filler debris is water-washed and rinsed away. Cleaning agents include low-viscosity liquids (oils) and flux, which do not decompose at elevated temperatures and are mixed with components operable to provide, at the elevated temperatures, the fumes for sufficient vapor pressure to break up and dislodge the coats from the metal contacts.

Abstract: A semiconductor device with a first (101) and a second (111) semiconductor chip assembled on an insulating flexible interposer (120). The interposer, preferably about 25 to 50 ?m thick, has conductive traces (121), a central planar rectangular area and on each side of the rectangle a wing bent at an angle from the central plane. The central area has metal studs (122, 123) on the top and the bottom surface, which match the terminals of the chips, further conductive vias of a pitch center-to-center about 50 ?m or less. The side wings have contact pads (130) with metallic connectors (131) on the bottom surface; the connectors may be solder balls, metal studs, or anisotropic conductive films. The second chip is adhesively attached to a substrate, whereby the interposer faces away from the substrate. The interposer side wings have a convex bending (150) downwardly along the second chip and a concave bending (151) over the substrate; the side wing connectors are attached to the matching substrate sites.