Patents by Inventor Kwan-Woo Do

Kwan-Woo Do has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090004808
    Abstract: A method for fabricating a capacitor includes forming a sacrificial layer having a plurality of trenches on an upper portion of a substrate, forming storage nodes in the trenches, exposing upper portions of the storage nodes by removing a portion of the sacrificial layer, forming supporters to support the exposed upper portions of the storage nodes, removing the sacrificial layer under the supporters, and removing the supporters.
    Type: Application
    Filed: December 27, 2007
    Publication date: January 1, 2009
    Applicant: Hynix Semiconductor Inc.
    Inventors: Kee-Jeung LEE, Jae-Sung Roh, Seung-Jin Yeom, Han-Sang Song, Deok-Sin Kil, Young-Dae Kim, Jin-Hyock Kim, Kwan-Woo Do
  • Publication number: 20080157278
    Abstract: A capacitor includes a lower electrode, a dielectric layer, an upper electrode, and a ruthenium oxide layer. At least one of the lower electrode and the upper electrode is formed of a ruthenium layer, and the ruthenium oxide layer is disposed next to the ruthenium layer.
    Type: Application
    Filed: December 27, 2007
    Publication date: July 3, 2008
    Applicant: Hynix Semiconductor Inc.
    Inventors: Kwan-Woo Do, Jae-Sung Roh, Kee-Jeung Lee, Deok-Sin Kil, Young-Dae Kim, Jin-Hyock Kim, Kyung-Woong Park, Han-Sang Song