Abstract: A display panel includes a first substrate, a thin-film transistor (TFT), an organic layer, a second substrate, a seal line, and a conductive pattern. The first substrate includes a pixel part and a driving part connected to the pixel part. The TFTs are formed in the pixel part and the driving part. The organic layer is formed on the first substrate having the TFTs formed thereon. The second substrate is opposite to the first substrate. The seal line is disposed between an edge portion of the first substrate having the organic layer formed thereon and an edge portion of the second substrate. The seal line combines the first substrate with the second substrate. The conductive pattern is disposed between the seal line and the organic layer.

Abstract: In a pixel for displays capable of simplifying manufacturing process, a display apparatus having a simplified pixel structure and a method of manufacturing a cost competitive display device, a display pixel includes a channel layer, first to third signal lines, first and second insulating layers and a pixel electrode. The first signal line is formed on the first insulating layer. The first insulating layer insulates the channel layer from the first signal line. The second insulating layer insulates the first signal line from the second and third signal lines, and includes contact holes. The second and third signal lines are connected to the channel layer through the contact holes. The pixel electrode including indium zinc oxide is formed on the identical layer with the first and second signal lines, and disposed on the second insulating layer. Therefore, manufacturing process is simplified and manufacturing time is reduced.

Abstract: Disclosed is an X-ray detector and a method of manufacturing the X-ray detector. A cushion layer is interposed between a scintillator panel for converting X-rays into visual light and a lower substrate formed with a thin film transistor, a photoelectric conversion device. Thus, the lower substrate and the scintillator panel can be bonded to each other such that no air layer can be introduced between the lower substrate and the scintillator panel. Therefore, no air layer is introduced, and thus, it is possible to prevent the efficiency of light incident to the photoelectric conversion device from being lowered. Further, the cushion layer is employed such that the lower substrate and the scintillator panel can be separated and reused.

Abstract: An X-ray detector and method of driving an X-ray detector include an X-ray detector having a detection module that includes a plurality of gate lines and a plurality of photoelectric transducers connected to the gate lines, respectively, to convert X-ray radiation into an electric signal, a data reading module that sequentially scans the gate lines, generates a dummy dark level, by reading electric signals of the photoelectric transducers during a standby period, generates an offset dark level, by reading the electric signals from the photoelectric transducers, before X-ray radiating a specimen, and generates a bright level by reading the electric signals from the photoelectric signals after the irradiation of the specimen during an X-ray radiation period, and a data processing module that ignores the dummy dark level and generates image data using only the bright level and the offset dark level.

Abstract: The present invention relates to a process for vapor depositing a low dielectric insulating film, a thin film transistor using the same, and a preparation method thereof, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device. The present invention also relates to a thin film transistor using the process and preparation method thereof.

Abstract: A liquid crystal display includes first and second substrates. The first substrate has a first insulating substrate, and a pixel electrode formed on the first insulating substrate with a first opening pattern. The second substrate has a second insulating substrate, and a common electrode formed on the second insulating substrate with a second opening pattern. The first and the second opening patterns proceed parallel to each other while being arranged in an alternate manner. A liquid crystal material is injected between the first and the second substrates. A spacer is positioned at an end of the second opening pattern to maintain the distance between the first and the second substrates.

Abstract: A display device includes a substrate, first and second signal lines formed on the substrate, a first thin film transistor connected to the first and second signal lines, a gate driver and a data driver connected to the first signal line and the second signal line, respectively, and a second thin film transistor formed in at least one of the gate driver and the data driver The first thin film transistor and the second thin film transistor include a first semiconductor and a second semiconductor, respectively, and the first semiconductor and the second semiconductor are formed at the different layers from each other.

Abstract: There are provided a TFT, a TFT substrate using the TFT, a method of fabricating the TFT substrate, and an LCD. The TFT includes a source region, a drain region, and a gate electrode having an opening. The opening of the gate electrode is to enhance the light sensing ability of the TFT when it is used as a light sensor, since light is incident into a region where the opening is formed. The TFT including the gate having the opening can be used in a substrate of a flat display or an LCD using such a substrate. The above TFT can sense light incident from outside the display to adjust the brightness of the screen according to the external illumination.

Abstract: A liquid crystal display includes first and second substrates. The first substrate has a first insulating substrate, and a pixel electrode formed on the first insulating substrate with a first opening pattern. The second substrate has a second insulating substrate, and a common electrode formed on the second insulating substrate with a second opening pattern. The first and the second opening patterns proceed parallel to each other while being arranged in an alternate manner. A liquid crystal material is injected between the first and the second substrates. A spacer is positioned at an end of the second opening pattern to maintain the distance between the first and the second substrates.

Abstract: A liquid crystal display includes first and second substrates. The first substrate has a first insulating substrate, and a pixel electrode formed on the first insulating substrate with a first opening pattern. The second substrate has a second insulating substrate, and a common electrode formed on the second insulating substrate with a second opening pattern. The first and the second opening patterns proceed parallel to each other while being arranged in an alternate manner. A liquid crystal material is injected between the first and the second substrates. A spacer is positioned at an end of the second opening pattern to maintain the distance between the first and the second substrates.

Abstract: A display apparatus, such as an organic light emitting diode (“OLED”) display, is driven by thin film transistors (“TFTs”), including a driving TFT and a switching TFT, and a pixel electrode. The display apparatus includes an amorphous silicon layer for the switching TFT and a microcrystalline silicon or polycrystalline silicon layer for the driving TFT. The amorphous silicon layer and the microcrystalline silicon layer are separated by an insulating layer. The apparatus provides product reliability and high image quality. A method of manufacturing the apparatus is characterized by reducing processing steps, and using a special mask which is a half tone mask or a slit mask adapted to forming a source electrode and a drain electrode of the switching TFT or the driving TFT and a semiconductor layer during a photolithographic process.

Abstract: There are provided a TFT, a TFT substrate using the TFT, a method of fabricating the TFT substrate, and an LCD. The TFT includes a source region, a drain region, and a gate electrode having an opening. The opening of the gate electrode is to enhance the light sensing ability of the TFT when it is used as a light sensor, since light is incident into a region where the opening is formed. The TFT including the gate having the opening can be used in a substrate of a flat display or an LCD using such a substrate. The above TFT can sense light incident from outside the display to adjust the brightness of the screen according to the external illumination.

Abstract: A display substrate includes a base substrate having a display area and a peripheral area which surrounds the display area, a pixel electrode formed on the display area, a pad part formed on the peripheral area, an adhesion part formed on the peripheral area and having a plurality of holes formed in an area adjacent to the pad part on the peripheral area and a conductive adhesion member formed on the pad part and the adhesion part to make electrical contact with the pad part and a terminal of an integrated circuit.

Abstract: In a thin-film transistor (“TFT”) array substrate for an X-ray detector and an X-ray detector having the TFT array substrate, the TFT array substrate includes a gate wiring, a gate insulating layer, an active layer, a data wiring, a photodiode, an organic insulating layer and a bias wiring. The gate wiring is formed on an insulating substrate and includes a gate line and a gate electrode. The gate insulating layer covers the gate wiring. The active layer is formed on the gate insulating layer. The data wiring is formed on the gate insulating layer and includes a data line, source and drain electrodes. The photodiode includes lower and upper electrodes, and a photoconductive layer. The organic insulating layer covers the data wiring and the photodiode. The bias wiring is formed on the organic insulating layer. Thus, an aperture ratio and reliability are enhanced.

Abstract: A thin film transistor (TFT) array substrate for an X-ray detector and a method of fabricating the same are provided. The TFT array substrate includes a substrate, a gate line formed on the substrate, a data line crossing the gate line, a thin film transistor including a gate electrode, a source electrode, and a drain electrode, a first electrode connected to the drain electrode, a passivation layer formed over the gate line, the data line, the thin film transistor and the first electrode, a photoconductor formed over the passivation layer and connected to the first electrode, and a second electrode formed on the photoconductor.

Abstract: An X-ray detector and method of driving an X-ray detector include an X-ray detector having a detection module that includes a plurality of gate lines and a plurality of photoelectric transducers connected to the gate lines, respectively, to convert X-ray radiation into an electric signal, a data reading module that sequentially scans the gate lines, generates a dummy dark level, by reading electric signals of the photoelectric transducers during a standby period, generates an offset dark level, by reading the electric signals from the photoelectric transducers, before X-ray radiating a specimen, and generates a bright level by reading the electric signals from the photoelectric signals after the irradiation of the specimen during an X-ray radiation period, and a data processing module that ignores the dummy dark level and generates image data using only the bright level and the offset dark level.

Abstract: A method for manufacturing a semiconductor device including forming a first wire on a substrate, forming a lower film on the first wire, forming a photosensitive pattern on the lower film using a photosensitive material, forming contact holes for exposing the first wire by etching the lower film using the photosensitive film as an etching mask, removing part of the photosensitive film pattern by an ashing process to expose a borderline of the lower film defining the contact holes and forming second wire connected to the first wire via the contact holes.

Abstract: An organic light emitting diode (OLED) display device and a manufacturing method thereof to improve a luminous character are provided. The OLED display device includes a first transistor, a second transistor and an OLED. An image is displayed by applying a driving current to OLED through the first transistor and the second transistor. The thickness of the gate insulating layers of the first and the second transistor are different. The OLED is provided with the sufficient driving current to improve the luminous character without decreasing emissive area.

Abstract: A liquid crystal display includes first and second substrates. The first substrate has a first insulating substrate, and a pixel electrode formed on the first insulating substrate with a first opening pattern. The second substrate has a second insulating substrate, and a common electrode formed on the second insulating substrate with a second opening pattern. The first and the second opening patterns proceed parallel to each other while being arranged in an alternate manner. A liquid crystal material is injected between the first and the second substrates. A spacer is positioned at an end of the second opening pattern to maintain the distance between the first and the second substrates.

Abstract: An X-ray detector includes a plurality of bias connection lines that connect both ends, respectively, of a bias line for applying a bias voltage to a PIN diode. The bias line includes first and second bias lines.