Abstract: Provided is a method of controlling local release of target compounds by patterning a hydrogel carrying a bone morphogenetic protein or anticancer drug as the target compounds onto an electrospun nanoporous membrane. The hydrogel is capable of controlling local release of the bone morphogenetic protein or anticancer drug as a carrier of the bone morphogenetic protein or anticancer. And the electrospun nanoporous membrane performs a basic function of the membrane of preventing infiltration of connective tissue. Thus, there is an advantage in that the hydrogel patterned nanoporous membrane can facilitate generation of controlled bone in a local region and degradation of cancer in a local region.

Abstract: The present invention relates to a device and method for detecting a surge arrester resistive leakage current for reducing the computational load, which may significantly reduce the computational load as the Fourier transform process need not be repeated in the process of searching to match a section to be Fourier transformed to a section in-phase with AC voltage to extract the resistive leakage current component from the Fourier series of surge arrester leakage current and enables real-time detection of the resistive leakage current by shortening the section searching process of one-period leakage current by searching for the section of one-period leakage current, which is to be initially Fourier-transformed, based on the characteristic pattern that it is repeatedly generated by application of an AC voltage.

Abstract: A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.

Abstract: The present invention relates to resistive leakage current in a surge arrester that measures not voltage but leakage current alone in the surge arrester to obtain a resistive leakage current included in the leakage current so as to compensate for shortcomings in conventional metal-oxide surge arresters.

Abstract: A display panel includes a base substrate. A semiconductor layer is disposed on the base substrate. A source electrode and a drain electrode are disposed on the semiconductor layer. A first insulating layer is disposed on both the source electrode and the drain electrode. A data line is disposed on the first insulating layer. The data line is electrically connected to the source electrode via a contact hole penetrating through the first insulating layer.

Abstract: The present disclosure relates to a method for preparing a nerve conduit, more particularly to a method for preparing a porous nerve conduit having micropores formed in microchannels and the nerve conduit prepared according to the present disclosure can be usefully used in in-vitro and in-vivo researches on nerves.

Abstract: Provided is a method of manufacturing a cathode active material for a lithium secondary battery. The method of manufacturing a cathode active material for a lithium secondary battery includes mixing a transition metal macro precursor and a lithium precursor to prepare a preliminary lithium-transition metal composite oxide particle; calcining the prepared preliminary lithium-transition metal composite oxide particle; and pulverizing the calcined preliminary lithium-transition metal composite oxide particle to form lithium-transition metal composite oxide particle. Accordingly, the process may be easily performed and a single crystal cathode active material having a uniform size may be manufactured.

Abstract: The cathode active material according to embodiments of the present invention includes a lithium composite oxide particle having a form of secondary particle in which a plurality of primary particle are aggregated, wherein the primary particles respectively include a lithium conduction pathway through which lithium ions are diffused. Wherein the primary particles include a first particle, and the first particle has an angle of 45° to 90° formed by a direction from a center of the first particle to a center of the lithium composite oxide particle and a direction of the lithium conduction pathway included in the first particle, wherein a ratio of the number of the first particles among the primary particles located on a surface of the lithium composite oxide particle is 20% or more.

Abstract: The present invention relates to a novel variant RNA polymerase sigma factor 70 (?70) polypeptide, a polynucleotide encoding the same, a microorganism containing the polypeptide, and a method for producing L-threonine by using the microorganism.

Abstract: A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is firmed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.

Abstract: A display panel includes a base substrate. A semiconductor layer is disposed on the base substrate. A source electrode and a drain electrode are disposed on the semiconductor layer. A first insulating layer is disposed on both the source electrode and the drain electrode. A data line is disposed on the first insulating layer. The data line is electrically connected to the source electrode via a contact hole penetrating through the first insulating layer.

Abstract: A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.

Abstract: A display panel includes a base substrate. A semiconductor layer is disposed on the base substrate. A source electrode and a drain electrode are disposed on the semiconductor layer. A first insulating layer is disposed on both the source electrode and the drain electrode. A data line is disposed on the first insulating layer. The data line is electrically connected to the source electrode via a contact hole penetrating through the first insulating layer.

Abstract: The present invention relates to a novel variant RNA polymerase sigma factor 70 (?70) polypeptide, a polynucleotide encoding the same, a microorganism containing the polypeptide, and a method for producing L-threonine by using the microorganism.

Abstract: Provided is a fluid control solenoid valve including: a valve body; a valve seat mounted on a lower portion thereof; a coil mounted on an outer circumferential surface thereof and to which power is applied; a core mounted on an inner surface thereof; a lower plunger movably disposed on the inner surface thereof and formed with an orifice and integrally formed with a tight contact portion to be in tight contact with the valve seat on a bottom surface thereof; and an actuating unit arranged to be linearly moved on an upper side of the lower plunger, actuated by interlocking the lower plunger and formed with an actuating rod which is linearly moved and which is in close contact with the orifice. A fluid flow delay unit is provided on an outer surface of the lower plunger to generate pressure difference between upper and lower portions of the lower plunger.

Abstract: The present invention relates to a novel variant RNA polymerase sigma factor 70 (?70) polypeptide, a polynucleotide encoding the same, a microorganism containing the polypeptide, and a method for producing L-threonine by using the microorganism.

Abstract: The present application relates to a microorganism of the genus Escherichia producing L-tryptophan and, more specifically, to a microorganism of the genus Escherichia with improved activity of producing L-tryptophan by weakening or inactivating the activity of endogenous 6-phosphogluconate dehydratase and 2-keto-3-deoxy-6-phosphogluconate aldolase. Additionally, the present application relates to a method for producing L-tryptophan using the microorganism of the genus Escherichia.

Abstract: Provided is a method of producing L-amino acids by using a recombinant coryneform microorganism in which the expression of a target gene is weakened by using a gene transcription inhibition method.

Abstract: The present invention relates to a microorganism able to produce L-threonine or L-tryptophan, and to a method for producing L-threonine or L-tryptophan by using same. More specifically, the present invention relates to: recombinant Escherichia coli which is more efficient in producing L-threonine or L-tryptophan by increasing the ability to produce ATP which is used as the most plentiful energy source in cells when producing L-threonine or L-tryptophan; and a method for producing L-threonine or L-tryptophan by using same.

Abstract: A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.