Abstract: A display panel includes a base substrate. A semiconductor layer is disposed on the base substrate. A source electrode and a drain electrode are disposed on the semiconductor layer. A first insulating layer is disposed on both the source electrode and the drain electrode. A data line is disposed on the first insulating layer. The data line is electrically connected to the source electrode via a contact hole penetrating through the first insulating layer.

Abstract: A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.

Abstract: The present disclosure relates to a novel modified RNA polymerase sigma factor A (SigA) polypeptide; a polynucleotide encoding the same; a microorganism containing the polypeptide; and a method for producing L-lysine using the microorganism.

Abstract: A vertical memory device includes a substrate having a cell array region and a connection region adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region of the substrate, and forming a stepped structure in the connection region, a first metal line dividing the plurality of gate electrode layers and connected to the cell array region and the connection region of the substrate, and a second metal line dividing a portion of the plurality of gate electrode layers and connected to the connection region of the substrate. A depth of a lower end portion of the second metal line may be greater than a depth of a lower end portion of the first metal line in the cell array region, based on an upper surface of the substrate.

Abstract: A display panel includes a base substrate. A semiconductor layer is disposed on the base substrate. A source electrode and a drain electrode are disposed on the semiconductor layer. A first insulating layer is disposed on both the source electrode and the drain electrode. A data line is disposed on the first insulating layer. The data line is electrically connected to the source electrode via a contact hole penetrating through the first insulating layer.

Abstract: A color conversion panel includes a substrate, a first color conversion layer and a second color conversion layer disposed on the substrate, a planarization layer covering the first color conversion layer and the second color conversion layer, and a polarization layer disposed on the planarization layer. An outlet from the planarization layer penetrates the polarization layer.

Abstract: Provided is a method of controlling local release of target compounds by patterning a hydrogel carrying a bone morphogenetic protein as the target compounds on a nanoporous membrane. The nanoporous membrane is capable of controlling local release of the bone morphogenetic protein as a carrier of the bone morphogenetic protein while performing a basic function of the membrane of preventing infiltration of connective tissue, and thus, there is an advantage in that the nanoporous membrane can facilitate generation of controlled bone in a local region.

Abstract: The present invention relates to a novel variant RNA polymerase sigma factor 70 (?70) polypeptide, a polynucleotide encoding the same, a microorganism containing the polypeptide, and a method for producing L-threonine by using the microorganism.

Abstract: The present disclosure relates to a microorganism of the genus Escherichia producing more L-tryptophan by inactivating the activity of phosphatase. Additionally, the present disclosure relates to a method for producing L-tryptophan using the microorganism of the genus Escherichia.

Abstract: A vertical memory device includes a substrate having a cell array region and a connection region adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region of the substrate, and forming a stepped structure in the connection region, a first metal line dividing the plurality of gate electrode layers and connected to the cell array region and the connection region of the substrate, and a second metal line dividing a portion of the plurality of gate electrode layers and connected to the connection region of the substrate. A depth of a lower end portion of the second metal line may be greater than a depth of a lower end portion of the first metal line in the cell array region, based on an upper surface of the substrate.

Abstract: Provided is a fluid control solenoid valve including: a valve body; a valve seat mounted on a lower portion thereof; a coil mounted on an outer circumferential surface thereof and to which power is applied; a core mounted on an inner surface thereof; a lower plunger movably disposed on the inner surface thereof and formed with an orifice and integrally formed with a tight contact portion to be in tight contact with the valve seat on a bottom surface thereof; and an actuating unit arranged to be linearly moved on an upper side of the lower plunger, actuated by interlocking the lower plunger and formed with an actuating rod which is linearly moved and which is in close contact with the orifice. A fluid flow delay unit is provided on an outer surface of the lower plunger to generate pressure difference between upper and lower portions of the lower plunger.

Abstract: A vertical memory device includes a substrate having a cell array region and a connection region adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region of the substrate, and forming a stepped structure in the connection region, a first metal line dividing the plurality of gate electrode layers and connected to the cell array region and the connection region of the substrate, and a second metal line dividing a portion of the plurality of gate electrode layers and connected to the connection region of the substrate. A depth of a lower end portion of the second metal line may be greater than a depth of a lower end portion of the first metal line in the cell array region, based on an upper surface of the substrate.

Abstract: A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end of the trench adjacent to the outermost trench. Each of the blocks includes insulating layers and gate electrodes, which are alternately and repeatedly stacked. Pillars pass through the insulating layers and the gate electrodes along a direction orthogonal to an upper surface of the substrate.

Abstract: Disclosed are a recombinant microorganism having enhanced L-amino acid producibility, wherein the recombinant microorganism is transformed to have an inactivated phage receptor thereof, and a method of producing an L-amino acid using the recombinant microorganism. The use of the recombinant microorganism may enable the production of the L-amino acid in a highly efficient manner.

Abstract: A vertical memory device includes a substrate having a cell array region and a connection region adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region of the substrate, and forming a stepped structure in the connection region, a first metal line dividing the plurality of gate electrode layers and connected to the cell array region and the connection region of the substrate, and a second metal line dividing a portion of the plurality of gate electrode layers and connected to the connection region of the substrate. A depth of a lower end portion of the second metal line may be greater than a depth of a lower end portion of the first metal line in the cell array region, based on an upper surface of the substrate.

Abstract: Disclosed are a recombinant microorganism having enhanced L-amino acid productivity, wherein the recombinant microorganism is transformed to have removed or decreased activity of at least one of adenosine deaminase and AMP nucleosidase, and a method of producing an L-amino acid using the recombinant microorganism. The use of the recombinant microorganism may enable the production of the L-amino acid in a highly efficient manner.

Abstract: The present invention relates to a microorganism of the genus Escherichia in which L-tryptophan productivity is improved by inactivating phosphatase activity. Further, the present invention relates to a method for producing L-tryptophan using the microorganism of the genus Escherichia.

Abstract: The present invention relates to a microorganism able to produce L-threonine or L-tryptophan, and to a method for producing L-threonine or L-tryptophan by using same. More specifically, the present invention relates to: recombinant Escherichia coli which is more efficient in producing L-threonine or L-tryptophan by increasing the ability to produce ATP which is used as the most plentiful energy source in cells when producing L-threonine or L-tryptophan; and a method for producing L-threonine or L-tryptophan by using same.

Abstract: A display panel includes a base substrate. A semiconductor layer is disposed on the base substrate. A source electrode and a drain electrode are disposed on the semiconductor layer. A first insulating layer is disposed on both the source electrode and the drain electrode. A data line is disposed on the first insulating layer. The data line is electrically connected to the source electrode via a contact hole penetrating through the first insulating layer.

Abstract: The present disclosure relates to a microorganism of the genus Escherichia producing more L-tryptophan by inactivating the activity of phosphatase. Additionally, the present disclosure relates to a method for producing L-tryptophan using the microorganism of the genus Escherichia.