Abstract: A semiconductor device bonded by an anisotropic conductive film, the anisotropic conductive film including a phenoxy resin including a fluorene-substituted phenoxy resin; and a radically polymerizable resin including a fluorene-substituted acrylate.

Abstract: A semiconductor device bonded by an anisotropic conductive adhesive composition, the anisotropic conductive adhesive composition having a solid content ratio between a polymer binder system and a curing system of about 40:60 to about 60:40, and a coefficient of thermal expansion of about 150 ppm/° C. or less at about 100° C. or less.

Abstract: An optical member includes an anisotropic conductive film that has a multilayer structure having a bonding layer containing an epoxy resin as a curing part and a bonding layer containing a (meth)acrylate resin as a curing part.

Abstract: An anisotropic conductive adhesive composite and film includes a binder and conductive particles dispersed in the binder. The conductive particles include a copper core particle and a metal coating layer coated on a surface of the corresponding copper core particle.

Abstract: Disclosed is a searching system for providing a search service to a client who accesses by using an access text including a domain name and a search word which comprises: at least one searching server; a real name database for storing an IP address, URL information, and a real name corresponding to a searching server on the Internet and being matched with each other, and a real name server for searching the real name database on the basis of the real name to find an IP address of the matched searching server and providing the same to the client when the domain name included in the access text input from the client is a real name; and the searching server searching information on the basis of the search word included in the access text provided by the client.

Abstract: A gas etchant composition and a method for simultaneously etching-back silicon oxide and polysilicon at substantially similar etching rates are used for manufacturing semiconductor devices. The gas etchant composition to be utilized for dry-etching includes carbon tetrafluoride gas and nitrogen gas mixed at a ratio of 25-40:1, while its etching rate ratio of polysilicon to silicon oxide is 0.8-1.2:1. Since polysilicon and silicon oxide are simultaneously etched by a single etching equipment utilizing the gas etchant composition in a single process, a composite layer having both polysilicon and silicon oxide can be effectively removed to obtain a resulting surface having a good profile. As a result, the formation of a polysilicon bridge caused by detachments of polysilicon particles in subsequent manufacturing processes can be prevented.

Abstract: A multiple reaction chamber system includes a transfer chamber, a load lock chamber connected to the transfer chamber, and a plurality of reaction chambers connected to the transfer chamber. An alignment chamber is connected to the transfer chamber, disposed along a path of wafer transfer from the load lock chamber to the plurality of reaction chambers, and includes a wafer aligner. A wafer recognition, disposed along a post-aligner portion of the path of wafer transfer system, recognizes an identification code of an individual wafer. A controlling system is in data communication with the wafer recognition system for selecting a selected chamber of the plurality of reaction chambers into which the individual wafer is to be transferred. Because individual wafers can be associated with each reaction chamber, a defective reaction chamber can be identified immediately and its use discontinued so that unproductive operations can be eliminated.

Abstract: A method of manufacturing semiconductor device that improves the alignment margin between a contact hole and a device pattern includes a layer having an upper vertically shaped portion and a lower symmetrically inclined shaped portion. That is, the lower portion is tapered.