Abstract: Provided are a magnetic layer, a method of forming the magnetic layer, an information storage device, and a method of manufacturing the information storage device. The information storage device may include a magnetic track having a plurality of magnetic domains, a current supply element connected to the magnetic layer and a reading/writing element. The magnetic track includes a hard magnetic track, and the hard magnetic track has a magnetization easy-axis extending in a direction parallel to a width of the hard magnetic track.

Abstract: Information storage devices and methods of manufacturing the same are provided. A magnetic track of the information storage device includes a magnetic layer in which at least one magnetic domain forming region and at least one magnetic domain wall forming region are alternately disposed in a lengthwise direction. The at least one magnetic domain forming regions has a different magnetic anisotropic energy relative to the at least one magnetic domain wall forming region. An intermediate layer is formed under the magnetic layer. The intermediate layer includes at least one first material region and at least one second material region. Each of the at least one first material regions and the at least one second material regions corresponds to one of the at least one magnetic domain forming regions and the at least one magnetic domain wall forming regions.

Abstract: Provided are a magnetic track using magnetic domain wall movement and an information storage device including the same. A magnetic track may comprise a zigzag shaped storage track including a plurality of first magnetic layers in parallel with each other, and stacked separate from each other, and a plurality of second magnetic layers for connecting the plurality of first magnetic layers. The information storage device may include the magnetic track having a plurality of magnetic domains, current applying device connected to the magnetic track, and a read/write device on a middle portion of the magnetic track.

Abstract: A data storage device using magnetic domain wall motion may include a first magnetic layer having a plurality of magnetic domains. A second magnetic layer may be connected to the first magnetic layer, and a connection layer may be disposed between the first and second magnetic layers. A resistive magnetic layer may be disposed between each of the first and second magnetic layers and the connection layer. Accordingly, when current is supplied to the data storage device to move a magnetic domain wall, the leakage of current in a connection between the magnetic layers may be reduced or prevented, thus conserving power.

Abstract: Provided are a data storage device using magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a first magnetic layer for writing data having two magnetic domains magnetized in opposite directions to each other and a second magnetic layer for storing data formed on at least one side of the first magnetic layer. The data storage device may further include a data recording device connected to both ends of the first magnetic layer and the end of the second magnetic layer which is not adjacent to the first magnetic layer, a read head formed a predetermined distance from the end of the second magnetic layer which is not adjacent to the first magnetic layer, and a current detector connected to the read head and the data recording device.

Abstract: A semiconductor memory apparatus according to an embodiment of the present invention includes a plurality of cell mats each having a plurality of cells, a plurality of sense amplifier arrays, each having a plurality of sense amplifiers for sensing the cells in response to a power terminal driving signal and a ground terminal driving signal, and a sense amplifier activation control unit that adjusts a timing, at which the sense amplifier arrays are activated, in response to a refresh signal.

Abstract: The present invention relates to a poly-gamma-glutamate (PGA) having an ultra-high molecular weight greater than 5,000 kDa. The ultra-high molecular weight PGA according to the present invention has a mean molecular weight greater than 13,000 kDa, and more than 95% of its molecules have a molecular weight ranging from 3,000 to 15,000 kDa. Also, it can be produced by the culturing of Bacillus subtilis var. chungkookjang. The ultra-high molecular weight PGA according to the present invention shows very excellent moisture-absorbing, moisture-retaining, sustained release, mineral solubility, and water-absorbing properties, and thus, can be used as a new and high value-added material in various applications.

Abstract: A lead storage battery electrode and a method for manufacturing the same are provided. The lead storage battery electrode includes a substrate, which is casted or expanded using lead, an active material coated on the substrate with electrochemical activities, and support layers and formed by embedding porous nonwoven fabric to a predetermined depth from both surfaces of the active material. The support layers prevent the separation of the active material in the manufacture of the electrode and make handling the active material easier. The porosity of the nonwoven fabric enhances the initial high rate discharge properties of the electrode, and the network structure of the nonwoven fabric, which is acid-resistant, stably supports the active material, so that the life cycle of the lead storage battery is prolonged.

Abstract: The invention provides an automatic brightness limiter having an amplification means to amplify the video signal and applying the image signal at the next stage and a contrast adjustment means to adjust the contrast of a screen through active components, the device comprising; control means which controls automatically the image signal level and the contrast of the CRT by controlling the outputs of the amplification means and the contrast adjustment means using a high voltage applied to an anode through control components, and lied between the amplification means and the contrast adjustment means. Improving the capacity of the brightness adjustment for the screen of the automatic brightness limiter may be attained according to the present invention.

Abstract: In a vertical pre-control circuit for an interface of a multi-synchronization monitor that correlates the one of a computer system and adapter connected to the vertical pre-control circuit to a CRT monitor, the vertical pre-control circuit has first, second and third oscillation sections connected to an output terminal for connection to the CRT monitor, the first, second and third oscillation sections providing, when enabled, respective signals to the output terminal respectively characteristic of the one of the computer system and adapter. First and second logic sections respectively respond to positive waveforms of horizontal and vertical synchronization signals from respective terminals respectively for connection to the one of the computer system and adapter for enabling, respectively, the first and second oscillation sections. A logic controller responds to a specific frequency of the horizontal synchronization signal for overridingly disabling an enabled one of the first and second oscillation sections.