Abstract: Magnetic memory devices may include a substrate, a circuit device on the substrate, a plurality of lower electrodes electrically connected to the circuit device, a magnetic tunnel junction (MTJ) structure commonly provided on the plurality of the lower electrodes, and a plurality of upper electrodes on the MTJ structure. The MTJ structure may include a plurality of magnetic material patterns and a plurality of insulation material patterns separating the magnetic material patterns from each other.

Abstract: A system and a method are provided that are capable of providing map data for supporting a variety of user network environments and selecting data zones freely. A navigation terminal includes a reception unit adapted to receive a file in which map data of a specific zone is stored, from a map provision server; and an execution unit adapted to execute a navigation function on the specific zone using the file. The file is produced by an individual unit with respect to each of geographic areas divided by a mesh unit having a variable size. The size of the mesh unit is decided according to the amount of information included in the geographic area such that the file has an equalized size.

Abstract: Provided are an LNG storage container with an inner shell, which is capable of efficiently storing LNG or pressurized LNG (PLNG) pressurized at a predetermined pressure and supplying the LNG or PLNG to a consumption place, and capable of reducing manufacturing costs by minimizing the use of a metal having excellent low temperature characteristic, and a method for manufacturing the same. The LNG storage container includes: an inner shell configured to store LNG inside; an outer shell configured to enclose the outside of the inner shell such that a space is formed between the inner shell and the outer shell; a support installed in the space between the inner shell and the outer shell to support the inner shell and the outer shell; and a heat insulation layer part installed in the space between the inner shell and the outer shell and configured to reduce a heat transfer.

Abstract: Magnetic memory devices may include a substrate, a circuit device on the substrate, a plurality of lower electrodes electrically connected to the circuit device, a magnetic tunnel junction (MTJ) structure commonly provided on the plurality of the lower electrodes, and a plurality of upper electrodes on the MTJ structure. The MTJ structure may include a plurality of magnetic material patterns and a plurality of insulation material patterns separating the magnetic material patterns from each other.

Abstract: An apparatus for generating pulsatile flows includes a liquid vessel capable of containing a liquid, a plurality of revolving mechanisms associated with each other, and a microchannel supplied with a liquid from the liquid vessel. As the plurality of revolving mechanisms rotate, a periodically changing pressure difference occurs between the liquid vessel and the microchannel, thereby implementing a pulsatile flow having a wave functional form in the microchannel. By applying the hydraulic head difference and controlling revolution of the revolving mechanisms based on Fourier cosine series, a minute and precise pulsatile flow of a wave functional form may be implemented by means of simple configuration and fabrication, which may not easily obtained by a conventional pump.

Abstract: Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.

Abstract: Magnetic memory devices include a magnetoresistive cell including a free layer having a variable magnetization direction and a pinned layer having a fixed magnetization direction, a bit line on the magnetoresistive cell and including a spin Hall effect material layer exhibiting a spin Hall effect and contacting the free layer; and a lower electrode under the magnetoresistive cell. A voltage is applied between the bit line and the lower electrode so that current passes through the magnetoresistive cell.

Abstract: Magnetic memory devices, and methods of operating the same, include a magnetoresistive element including a free layer, a pinned layer, and a separation layer between the free layer and the pinned layer. The devices, and methods, further include a first conductive line connected to the free layer and configured to apply a Rashba field to, or induce the Rashba field in, the free layer, and a second conductive line spaced apart from the free layer and configured to apply an external magnetic field to the free layer. A magnetization direction of the free layer is switchable by application of the Rashba field and the external magnetic field to the free layer.

Abstract: Magnetic structures, methods of forming the same, and memory devices including a magnetic structure, include a magnetic layer, and a stress-inducing layer on a first surface of the magnetic layer, a non-magnetic layer on a second surface of the magnetic layer. The stress-inducing layer is configured to induce a compressive stress in the magnetic layer. The magnetic layer has a lattice structure compressively strained due to the stress-inducing layer.

Abstract: The resistive random access memory (ReRAM) device includes a first amplifier configured to amplify a sensing current corresponding to data sensed in a memory cell, and a second amplifier configured to store the sensing current amplified by the first amplifier, and amplify electric charges when storing the amplified sensing current.

Abstract: The present disclosure provides a composition for radiation exposure diagnosis including an agent for measuring an expression level of an insulin-like growth factor-binding protein-5 (IGFBP-5) gene at an mRNA or the protein and a kit for radiation exposure diagnosis. Methods of diagnosing radiation exposure as well as methods for screening an agent for enhancing radiation sensitivity or for radiation protection are disclosed. Also provided are compositions for enhancing radiation sensitivity and/or radiation protection.

Abstract: Provided are magnetoresistive elements, memory devices including the same, and an operation methods thereof. A magnetoresistive element may include a free layer, and the free layer may include a plurality of regions (layers) having different properties. The free layer may include a plurality of regions (layers) having different Curie temperatures. The Curie temperature of the free layer may change regionally or gradually away from the pinned layer. The free layer may include a first region having ferromagnetic characteristics at a first temperature and a second region having paramagnetic characteristics at the first temperature. The first region and the second region both may have ferromagnetic characteristics at a second temperature lower than the first temperature. The effective thickness of the free layer may change with temperature.

Abstract: A temperature sensing circuit includes a signal generation unit including a delay line and generating a source signal with a pulse width corresponding to a delay value of the delay line, a pulse width expansion unit configured to generate a comparison signal by expanding a pulse width of the source signal, and a change detection unit configured to sense a temperature change using a difference between the pulse widths of the comparison signal and a reference signal.

Abstract: Magnetoresistive elements, and memory devices including the same, include a free layer having a changeable magnetization direction, a pinned layer facing the free layer and having a fixed magnetization direction, and an auxiliary element on a surface of the pinned layer. The auxiliary element has a width smaller than a width of the pinned layer, and a magnetization direction fixed to a direction the same as a direction of the fixed magnetization direction of the pinned layer.

Abstract: Oscillators and method of operating the same are provided, the oscillators include a magnetic layer, and a magnetization fixing element configured to fix a magnetization direction of the magnetic layer. The oscillators generate a signal by using precession of a magnetic moment of the magnetic layer.

Abstract: Magnetic memory devices include a magnetoresistive cell including a free layer having a variable magnetization direction and a pinned layer having a fixed magnetization direction, a bit line on the magnetoresistive cell and including a spin Hall effect material layer exhibiting a spin Hall effect and contacting the free layer; and a lower electrode under the magnetoresistive cell. A voltage is applied between the bit line and the lower electrode so that current passes through the magnetoresistive cell.

Abstract: Magnetoresistive elements, and memory devices including the same, include a pinned layer having a fixed magnetization direction, a free layer corresponding to the pinned layer, and a protruding element protruding from the free layer and having a changeable magnetization direction. The free layer has a changeable magnetization direction. The protruding element is shaped in the form of a tube. The protruding element includes a first protruding portion and a second protruding portion protruding from ends of the free layer facing in different directions.

Abstract: Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer having a magnetization direction that is fixed, a second magnetic layer corresponding to the first magnetic layer, wherein a magnetization direction of the second magnetic layer is changeable, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer.

Abstract: A data sensing circuit includes: a current source configured to supply a reference current to an output line; a switching precharging unit configured to couple an input line with the output line during a precharge operation of the input line; and a current sinking unit configured to sink a current from the output line in response to a voltage level of the input line.

Abstract: A method for switching between minor channels for digital televisions is disclosed. The method includes determining whether a minor channel is in a non-signal state, analyzing information of a major channel, to which the minor channel in the non-signal state pertains, if the minor channel is in the non-signal state, followed by obtaining information of minor channels pertaining to the major channel, and selecting other minor channels excluding the minor channel in the non-signal state based on an analysis of the information of the minor channels to sequentially determine whether the selected minor channels are in a signal state, followed by switching from the minor channel in the non-signal state to a minor channel in the signal state if a minor channel in the signal state is present.