Abstract: A method for analyzing digital contents is disclosed. According to an embodiment, a plurality of information sources are extracted from digital contents associated with a specific topic, an information source network is created on the basis of the plurality of information sources, and at least one of quantitative and qualitative analyses for the corresponding topic is performed on the basis of the information source network.

Abstract: The present disclosure relates to an IoT-based modular robotics system where a function button for changing from a program mode to an automatic mode is installed in a master block, enabling instant execution of the automatic mode in the master block.

Abstract: A method of fabricating a semiconductor device including a diffused metal-oxide-semiconductor (DMOS) transistor, an n-type metal-oxide-semiconductor (NMOS) transistor, and a p-type metal-oxide-semiconductor (PMOS) transistor includes forming separation regions in a semiconductor substrate, forming a gate insulating film, forming a DMOS gate electrode on the gate insulating film, forming a first mask pattern on the semiconductor substrate, performing a first ion implantation process, forming a second mask pattern on the semiconductor substrate, performing a second ion implantation process, forming a third mask pattern on the semiconductor substrate and performing a third ion implantation process into the semiconductor substrate, and forming a fourth mask pattern on the semiconductor substrate and performing a fourth ion implantation process.

Abstract: A thermal desorption system including a chamber including a space in which a substrate is heated; a flow compartment within the chamber, the flow compartment providing a separate gas flow space within the chamber; a substrate support that supports the substrate within the flow compartment; a heater that heats the substrate within the flow compartment; and a gas pipe that introduces a carrier gas into the flow compartment and discharges the carrier gas from the flow compartment.

Abstract: A High electron mobility transistor (HEMT) includes a source electrode, a gate electrode, a drain electrode, a channel forming layer in which a two-dimensional electron gas (2DEG) channel is induced, and a channel supplying layer for inducing the 2DEG channel in the channel forming layer. The source electrode and the drain electrode are located on the channel supplying layer. A channel increase layer is between the channel supplying layer and the source and drain electrodes. A thickness of the channel supplying layer is less than about 15 nm.

Abstract: A method of fabricating a semiconductor device including a diffused metal-oxide-semiconductor (DMOS) transistor, an n-type metal-oxide-semiconductor (NMOS) transistor, and a p-type metal-oxide-semiconductor (PMOS) transistor includes forming separation regions in a semiconductor substrate, forming a gate insulating film, forming a DMOS gate electrode on the gate insulating film, forming a first mask pattern on the semiconductor substrate, performing a first ion implantation process, forming a second mask pattern on the semiconductor substrate, performing a second ion implantation process, forming a third mask pattern on the semiconductor substrate and performing a third ion implantation process into the semiconductor substrate, and forming a fourth mask pattern on the semiconductor substrate and performing a fourth ion implantation process.

Abstract: High electron mobility transistors (HEMT) exhibiting dual depletion and methods of manufacturing the same. The HEMT includes a source electrode, a gate electrode and a drain electrode disposed on a plurality of semiconductor layers having different polarities. A dual depletion region exists between the source electrode and the drain electrode. The plurality of semiconductor layers includes an upper material layer, an intermediate material layer and a lower material layer, and a polarity of the intermediate material layer is different from polarities of the upper material layer and the lower material layer.

Abstract: A charging device of a welding fixture of spacer grid comprises a base frame; a conveyor for conveying a welding fixture horizontally over the base frame; and a gripper located over the base frame for gripping a welding fixture conveyed along the conveyor to charge a welding fixture into a welding chamber, wherein the gripper comprises a gripper body; and a gripping part installed horizontal to the end of the gripper body for gripping a welding fixture and capable of tilting in vertical direction to the gripper body in case more than a predetermined load is applied as a vertical load.

Abstract: A conductivity detector includes a flow channel, an electrode arrangement, and a detector. The flow channel has a tube shape with a channel diameter through which a solution including ion components flows. The electrode arrangement is on the flow channel and includes at least an anode and at least a cathode. The anode and cathode are spaced apart by an electrode gap less than or equal to the channel diameter. The detector is connected to the electrode arrangement to detect electrical conductivity of the ion components.

Abstract: An evaluation system of block copolymer patterns includes a supplier, a plurality of analyzers, and a homopolymer interference remover. The supplier provides a sample including a block copolymer and a homopolymer. The analyzers measure a molecular weight of the block copolymer in the sample, measure a preliminary block ratio, the preliminary block ratio corresponding to a total ratio in the sample of each block in the block copolymer, and selectively measure a ratio of the homopolymer in the sample. The homopolymer interference remover subtracts the ratio of the homopolymer from the preliminary block ratio.

Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes: stack including a buffer layer, a channel layer containing a two dimensional electron gas (2DEG) channel, and a channel supply layer sequentially stacked on each other, the stack defining a first hole and a second hole that are spaced apart from each other. A first electrode, a second electrode, and third electrode are spaced apart from each other along a first surface of the channel supply layer. A first pad is on the buffer layer and extends through the first hole of the stack to the first electrode. A second pad is on the buffer layer and extends through the second hole of the stack to the second electrode. A third pad is under the stack and electrically connected to the third electrode.

Abstract: An apparatus for generating a virtual engine sound is provided. The apparatus includes a rotating bracket member that is disposed within a wheel of a vehicle and includes movement space therein, and elastic bodies, each of which has a first end fixed to a substantial rotation center position of the rotating bracket member. In addition, the apparatus includes weight bodies which are fixed to a second end of the elastic body, and are configured to move within the movement space based on a rotation speed of the wheel of the vehicle, and selectively contact the rotating bracket member.

Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG) in a channel layer, a source electrode and a drain electrode that are at sides of the channel supply layer, a depletion-forming layer that is on the channel supply layer and contacts the source electrode, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulating layer. The depletion-forming layer forms a depletion region in the 2DEG.

Abstract: A power management chip and a power management device including the power management chip. The power management chip includes at least one power switch and a driver unit for generating a driving signal for driving the at least one power switch, the driver unit including one or more circuit units formed on a same substrate as the at least one power switch.

Abstract: A printed circuit board includes first and second insulating layers forming a cavity, a first heat releasing layer formed on an exterior surface of the cavity, and a circuit layer formed above or below the first the insulating layer and at least between a surface of the cavity and the first insulating layer. The heat releasing layer is electrically connected to at least a portion of the circuit layer.

Abstract: According to example embodiments, a method for controlling a gate voltage applied to a gate electrode of a high electron mobility transistor (HEMT) may include measuring a voltage between a drain electrode and a source electrode of the HEMT, and adjusting a level of the gate voltage applied to the gate electrode of the HEMT according to the measured voltage. The level of the gate electrode may be adjusted if the voltage between the drain electrode and the source electrode is different than a set value.

Abstract: Field effect semiconductor devices and methods of manufacturing the same are provided, the field effect semiconductor devices include a second semiconductor layer on a first surface of a first semiconductor layer, a first and a second third semiconductor layer respectively on two sides of the second semiconductor layer, a source and a drain respectively on the first and second third semiconductor layer, and a gate electrode on a second surface of the first semiconductor layer.

Abstract: High electron mobility transistors (HEMTs) including lightly doped drain (LDD) regions and methods of manufacturing the same. A HEMT includes a source, a drain, a gate, a channel supplying layer for forming at least a 2-dimensional electron gas (2DEG) channel, and a channel formation layer in which at least the 2DEG channel is formed. The channel supplying layer includes a plurality of semiconductor layers having different polarizabilities. A portion of the channel supplying layer is recessed. One of the plurality of semiconductor layers, which is positioned below an uppermost layer is an etching buffer layer, as well as a channel supplying layer.

Abstract: A nitride-based semiconductor diode includes a substrate, a first semiconductor layer disposed on the substrate, and a second semiconductor layer disposed on the first semiconductor layer. The first and second semiconductor layers include a nitride-based semiconductor. A first portion of the second semiconductor layer may have a thickness thinner than a second portion of the second semiconductor layer. The diode may further include an insulating layer disposed on the second semiconductor layer, a first electrode covering the first portion of the second semiconductor layer and forming an ohmic contact with the first semiconductor layer and the second semiconductor layer, and a second electrode separated from the first electrode, the second electrode forming an ohmic contact with the first semiconductor layer and the second semiconductor layer.

Abstract: A charging device of a welding fixture of spacer grid comprises a base frame; a conveyor for conveying a welding fixture horizontally over the base frame; and a gripper located over the base frame for gripping a welding fixture conveyed along the conveyor to charge a welding fixture into a welding chamber, wherein the gripper comprises a gripper body; and a gripping part installed horizontal to the end of the gripper body for gripping a welding fixture and capable of tilting in vertical direction to the gripper body in case more than a predetermined load is applied as a vertical load.