Abstract: A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof.

Abstract: A method of forming fine patterns of a semiconductor device by using carbon (C)-containing films includes forming an etching target film on a substrate including first and second regions; forming a plurality of first C-containing film patterns on the etching target film in the first region; forming a buffer layer which covers top and side surfaces of the plurality of first C-containing film patterns; forming a second C-containing film; removing the second C-containing film in the second region; exposing the plurality of first C-containing film patterns by removing a portion of the buffer layer in the first and second regions; and etching the etching target film by using the plurality of first C-containing film patterns, and portions of the second C-containing film which remain in the first region, as an etching mask.

Abstract: In an optical member holder and a projection exposure apparatus having the same, a light beam radiated from a light source may be formed into light having a desired shape by selecting one of a plurality of optical elements. An optical element holder may include a support member to support the plurality of optical elements, a first driving section to move or rotate the support member to select one of the optical elements, and a second driving section to rotate the selected optical element to adjust an arrangement direction thereof. The light formed by the selected optical element may be directed through a reticle.

Abstract: In a method of manufacturing a capacitor and a method of manufacturing a dynamic random access memory device, an insulating layer covering an upper portion of a conductive layer may be provided with an ozone gas so as to change the property of the upper portion of the insulating layer. The upper portion of the insulating layer may be chemically removed to expose the upper portion of the conductive layer. The exposed upper portion of the conductive layer may be removed so as to transform the conductive layer into a lower electrode. The remaining portion of the insulating layer may be removed, and an upper electrode may be formed on the lower electrode.

Abstract: A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof.

Abstract: A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof.

Abstract: In a method of manufacturing a capacitor and a method of manufacturing a dynamic random access memory device, an insulating layer covering an upper portion of a conductive layer may be provided with an ozone gas so as to change the property of the upper portion of the insulating layer. The upper portion of the insulating layer may be chemically removed to expose the upper portion of the conductive layer. The exposed upper portion of the conductive layer may be removed so as to transform the conductive layer into a lower electrode. The remaining portion of the insulating layer may be removed, and an upper electrode may be formed on the lower electrode.

Abstract: A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer is polymerized with (a) at least one of the monomers having the respective formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x and y are independently integers from 1 to 6, and (b) at least one of a (meth)acrylate monomer, a maleic anhydride monomer, and a norbornene monomer.

Abstract: Disclosed is a photosensitive polymer comprising pentafluoromethylvinyl ether derivative monomer having the formula: wherein R may be an alkoxy carbonyl, alkylsilane, a fluorine-substituted or unsubstituted C3–C20 alkyl carbonyl, a fluorine-substituted or unsubstituted C3–C20 cycloalkylcarbonyl or a fluorine-substituted or unsubstituted benzoyl substituent group. The photosensitive polymer is the polymerization product of the pentafluoromethylvinyl ether derivative monomer and at least one additional monomer selected from the group consisting of (meth)acrylic acid, (meth)acrylate, styrene, norbornene, tetrafluoroethylene and maleic anhydride monomers. The photosensitive polymer may be used in photoresist compositions for exposure light sources having a predominant wavelength of less than 157 nm.

Abstract: In an optical member holder and a projection exposure apparatus having the same, a light beam radiated from a light source may be formed into light having a desired shape by selecting one of a plurality of optical elements. An optical element holder may include a support member to support the plurality of optical elements, a first driving section to move or rotate the support member to select one of the optical elements, and a second driving section to rotate the selected optical element to adjust an arrangement direction thereof. The light formed by the selected optical element may be directed through a reticle.

Abstract: In a semiconductor device having asymmetric bit lines and a method of manufacturing the same, a plurality of active regions are electrically isolated from one another by an isolation layer. Each active region extends in a first direction and has a central portion between end portions. The device includes a plurality of transistors, each including first impurity doped regions formed at the central portions and second impurity doped regions formed at both end portions to extend in a second direction different from the first direction. A plurality of asymmetric bit lines are electrically connected to the first impurity doped regions, each extending in a third direction substantially perpendicular to the second direction. Each asymmetric bit line has a first side surface extending in a straight line along the third direction, and a second side surface including a plurality of protrusions.

Abstract: In methods of manufacturing a capacitor and a semiconductor device, a mold layer is formed on a substrate having a contact plug. The mold layer includes an opening exposing the contact plug. A conductive layer is formed on the contact plug, an inner sidewall of the opening and the mold layer. A photoresist pattern is formed to substantially fill the opening. A cylindrical lower electrode is formed by partially removing the conductive layer. The mold layer is selectively removed while the photoresist pattern prevents damage to the lower electrode, the contact plug and the substrate. The photoresist pattern is removed, and then a dielectric layer and an upper electrode are sequentially formed on the lower electrode. Damage to the lower electrode and the contact plug are effectively prevented due to the presence of the photoresist pattern during selective removal of the mold layer.

Abstract: This invention is directed to a coating composition used for original equipment manufacturing or refinishing uses in the automotive industry, which coating composition utilizes an acrylic polymer which contains substituted or unsubstituted exomethylene lactones or lactams as a comonomer.

Abstract: In one embodiment, first and second multi-layer pattern structures are formed over first and second regions of a substrate, respectively. The first and second multi-layer pattern structures include first and second support layer patterns, respectively. The first and second multi-layer pattern structures define first and second openings, respectively. The first and second openings partially expose a portion of the first region and a portion of the second region, respectively. First and second liner patterns are formed on an inner face of the first opening and an inner face of the second opening, respectively. A first etching process is performed on the first multi-layer pattern structure until the first support layer pattern is removed. A second etching process is performed to remove the second multi-layer pattern structure except for the second support layer pattern.

Abstract: A photosensitive polymer including fluorine, a resist composition containing the same and a patterning method for IC fabrication using the resist composition are provided. The photosensitive polymer having at least one selected from the group consisting of fluorine-substituted or unsubstituted alkyl ester, tetrahydropyranyl ester, tetrahydrofuranyl ester, nitrile, amide, carbonyl and hexafluoro alkyl having a hydrophilic group, and a trifluorovinyl derivative monomer as a repeating unit and having a weight average molecular weight of about 3,000 to about 100,000. The photosensitive polymer exhibits high transmittance for a light source of F2 (157 nm), high dry etching resistance, and has characteristics suitable to realize an unitrafine pattern size.

Abstract: A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof.

Abstract: A photosensitive polymer comprises a fluorinated ethylene glycol group and a chemically amplified resist composition including the photosensitive polymer. The photosensitive polymer has a weight average molecular weight of about 3,000-50,000 having a repeating unit as follows: wherein R1 is a hydrogen atom or methyl group, and R2 is a fluorinated ethylene glycol group having 3 to 10 carbon atoms.

Abstract: A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer is polymerized with (a) at least one of the monomers having the respective formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x and y are independently integers from 1 to 6, and (b) at least one of a (meth)acrylate monomer, a maleic anhydride monomer, and a norbornene monomer.

Abstract: Provided are a fluorine-containing photosensitive polymer having a hydrate structure and a resist composition including the photosensitive polymer.

Abstract: A photosensitive polymer including fluorine, a resist composition containing the same and a patterning method for IC fabrication using the resist composition are provided. The photosensitive polymer having at least one selected from the group consisting of fluorine-substituted or unsubstituted alkyl ester, tetrahydropyranyl ester, tetrahydrofuranyl ester, nitrile, amide, carbonyl and hexafluoro alkyl having a hydrophilic group, and a trifluorovinyl derivative monomer as a repeating unit and having a weight average molecular weight of about 3,000 to about 100,000. The photosensitive polymer exhibits high transmittance for a light source of F2 (157 nm), high dry etching resistance, and has characteristics suitable to realize an unitrafine pattern size.