Patents by Inventor Kwangduk Douglas Lee

Kwangduk Douglas Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220262643
    Abstract: Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.
    Type: Application
    Filed: February 18, 2021
    Publication date: August 18, 2022
    Inventors: Krishna NITTALA, Sarah Michelle BOBEK, Kwangduk Douglas LEE, Ratsamee LIMDULPAIBOON, Dimitri KIOUSSIS, Karthik JANAKIRAMAN
  • Patent number: 11322352
    Abstract: Disclosed herein is a method and apparatus for forming carbon hard masks to improve deposition uniformity and etch selectivity. The carbon hard mask may be formed in a PECVD process chamber and is a nitrogen-doped carbon hardmask. The nitrogen-doped carbon hardmask is formed using a nitrogen containing gas, an argon containing gas, and a hydrocarbon gas.
    Type: Grant
    Filed: April 20, 2020
    Date of Patent: May 3, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Xiaoquan Min, Lu Xu, Prashant Kumar Kulshreshtha, Kwangduk Douglas Lee
  • Publication number: 20220130650
    Abstract: Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The system may include a substrate support extending through the base of the chamber body. The chamber body may define an access circumferentially extending about the substrate support at the base of the chamber body. The system may include one or more isolators disposed within the chamber body. The one or more isolators may define an exhaust path between the one or more isolators and the chamber body. The exhaust path may extend to the base of the chamber body. The systems may include a fluid source fluidly coupled with the chamber body at the access extending about the substrate support.
    Type: Application
    Filed: October 22, 2020
    Publication date: April 28, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Sarah Michelle Bobek, Venkata Sharat Chandra Parimi, Sungwon Ha, Kwangduk Douglas Lee
  • Publication number: 20220122873
    Abstract: Exemplary semiconductor processing systems include a processing chamber, a power supply, and a chuck disposed at least partially within the processing chamber. The chuck includes a chuck body defining a vacuum port. The chuck also includes first and second coplanar electrodes embedded in the chuck body and connected to the power supply. In some examples, coplanar electrodes include concentric electrodes defining a concentric gap in between. Exemplary semiconductor processing methods may include activating the power supply for the electrostatic chuck to secure a semiconductor substrate on the body of the chuck and/or activating the vacuum port defined by the body of the electrostatic chuck. Some processing can be carried out at increased pressure, while other processing can be carried out at reduced pressure with increased chucking voltage.
    Type: Application
    Filed: October 19, 2020
    Publication date: April 21, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Jian Li, Dmitry A. Dzilno, Juan Carlos Rocha-Alvarez, Paul L. Brillhart, Akshay Gunaji, Mayur Govind Kulkarni, Sandeep Bindgi, Sanjay Kamath, Kwangduk Douglas Lee, Zongbin Wang, Yubin Zhang, Yong Xiang Lim
  • Publication number: 20220098728
    Abstract: The present disclosure relates to a method for in situ seasoning of process chamber components, such as electrodes. The method includes depositing a silicon oxide film over the process chamber component and converting the silicon oxide film to a silicon-carbon-containing film. The silicon-carbon-containing film forms a protective film over the process chamber components and is resistant to plasma processing and/or dry etch cleaning. The coatings has high density, good emissivity control, and reduces risk of device property drift.
    Type: Application
    Filed: September 29, 2020
    Publication date: March 31, 2022
    Inventors: Sarah Michelle BOBEK, Abdul Aziz Khaja, Ratsamee Limdulpaiboon, Kwangduk Douglas Lee
  • Patent number: 11276562
    Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: March 15, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Zheng John Ye, Ganesh Balasubramanian, Thuy Britcher, Jay D. Pinson, II, Hiroji Hanawa, Juan Carlos Rocha-Alvarez, Kwangduk Douglas Lee, Martin Jay Seamons, Bok Hoen Kim, Sungwon Ha
  • Publication number: 20220020589
    Abstract: Exemplary methods of semiconductor processing may include forming a first plasma of a silicon-containing precursor and an oxygen-containing precursor within a processing region of a semiconductor processing chamber. The methods may also include depositing a coating from first effluents of the first plasma on surfaces defining the processing region to a target thickness greater than or about 0.5 ?m. Forming the first plasma may occur at a first power greater than or about 300 W. The surfaces defining the processing region may include a surface of a faceplate that faces the processing region.
    Type: Application
    Filed: July 19, 2020
    Publication date: January 20, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Lu Xu, Ratsamee Limdulpaiboon, Kwangduk Douglas Lee
  • Publication number: 20210327713
    Abstract: Disclosed herein is a method and apparatus for forming carbon hard masks to improve deposition uniformity and etch selectivity. The carbon hard mask may be formed in a PECVD process chamber and is a nitrogen-doped carbon hardmask. The nitrogen-doped carbon hardmask is formed using a nitrogen containing gas, an argon containing gas, and a hydrocarbon gas.
    Type: Application
    Filed: April 20, 2020
    Publication date: October 21, 2021
    Inventors: Xiaoquan MIN, Lu XU, Prashant Kumar KULSHRESHTHA, Kwangduk Douglas LEE
  • Publication number: 20210287924
    Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include a heater embedded within the electrostatic chuck body. The substrate support assemblies may include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assembly may include a ceramic material characterized by a grain size of less than or about 5 ?m.
    Type: Application
    Filed: March 16, 2020
    Publication date: September 16, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Jian Li, Paul L. Brillhart, Juan Carlos Rocha-Alvarez, Abdul Aziz Khaja, Vinay K. Prabhakar, Kwangduk Douglas Lee, Chidambara A. Ramalingam, Venkata Sharat Chandra Parimi
  • Publication number: 20210225650
    Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about ?100 MPa to about 100 MPa.
    Type: Application
    Filed: April 1, 2021
    Publication date: July 22, 2021
    Inventors: Prashant Kumar KULSHRESHTHA, Ziqing DUAN, Karthik Thimmavajjula NARASIMHA, Kwangduk Douglas LEE, Bok Hoen KIM
  • Patent number: 11031262
    Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.
    Type: Grant
    Filed: April 2, 2020
    Date of Patent: June 8, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Saptarshi Basu, Jeongmin Lee, Paul Connors, Dale R. Du Bois, Prashant Kumar Kulshreshtha, Karthik Thimmavajjula Narasimha, Brett Berens, Kalyanjit Ghosh, Jianhua Zhou, Ganesh Balasubramanian, Kwangduk Douglas Lee, Juan Carlos Rocha-Alvarez, Hiroyuki Ogiso, Liliya Krivulina, Rick Gilbert, Mohsin Waqar, Venkatanarayana Shankaramurthy, Hari K. Ponnekanti
  • Publication number: 20210159048
    Abstract: A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described.
    Type: Application
    Filed: November 25, 2019
    Publication date: May 27, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Venkata Sharat Chandra Parimi, Xiaoquan Min, Zheng John Ye, Prashant Kumar Kulshreshtha, Vinay K. Prabhakar, Lu Xu, Kwangduk Douglas Lee
  • Publication number: 20210111000
    Abstract: Implementations of the present disclosure generally relate to methods and apparatus for generating and controlling plasma, for example RF filters, used with plasma chambers. In one implementation, a plasma processing apparatus is provided. The plasma processing apparatus comprises a chamber body, a powered gas distribution manifold enclosing a processing volume and a radio frequency (RF) filter. A pedestal having a substrate-supporting surface is disposed in the processing volume. A heating assembly comprising one or more heating elements is disposed within the pedestal for controlling a temperature profile of the substrate-supporting surface. A tuning assembly comprising a tuning electrode is disposed within the pedestal between the one or more heating elements and the substrate-supporting surface. The RF filter comprises an air core inductor, wherein at least one of the heating elements, the tuning electrode, and the gas distribution manifold is electrically coupled to the RF filter.
    Type: Application
    Filed: November 30, 2020
    Publication date: April 15, 2021
    Inventors: Zheng John Ye, Abdul Aziz Khaja, Amit Kumar Bansal, Kwangduk Douglas Lee, Xing Lin, Jianhua Zhou, Addepalli Sai Susmita, Juan Carlos Rocha-Alvarez
  • Patent number: 10971364
    Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-carbon films on a substrate. In one implementation, a method of processing a substrate is provided. The method comprises flowing a hydrocarbon-containing gas mixture into a processing volume of a processing chamber having a substrate positioned therein, wherein the substrate is heated to a substrate temperature from about 400 degrees Celsius to about 700 degrees Celsius, flowing a boron-containing gas mixture into the processing volume and generating an RF plasma in the processing volume to deposit a boron-carbon film on the heated substrate, wherein the boron-carbon film has an elastic modulus of from about 200 to about 400 GPa and a stress from about ?100 MPa to about 100 MPa.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: April 6, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Prashant Kumar Kulshreshtha, Ziqing Duan, Karthik Thimmavajjula Narasimha, Kwangduk Douglas Lee, Bok Hoen Kim
  • Publication number: 20210082696
    Abstract: A method of and system for substrate fabrication is disclosed herein. The method includes performing a first plasma-enhanced surface treatment in a chamber prior to disposal of a substrate, then, subsequently, depositing a season material in the process chamber. After depositing the plurality of season materials in the process chamber, a substrate is disposed in the chamber. The substrate is positioned in the process chamber in contact with the season material. A substrate treatment is performed. The substrate treatment can include one or more of: performing a second plasma-enhanced surface treatment, forming a barrier layer on the substrate, or performing a low frequency RF treatment prior to forming a metal-based hardmask film on the substrate. The metal-based hardmask film includes one or more metals.
    Type: Application
    Filed: March 1, 2019
    Publication date: March 18, 2021
    Inventors: Xiaoquan MIN, Prashant Kumar KULSHRESHTHA, Kwangduk Douglas LEE, Vinay K. PRABHAKAR
  • Patent number: 10950445
    Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for depositing metal silicide layers on substrates and chamber components. In one embodiment, a method of forming a hardmask includes positioning the substrate having a target layer within a processing chamber, forming a seed layer comprising metal silicide on the target layer and depositing a tungsten-based bulk layer on the seed layer, wherein the metal silicide layer and the tungsten-based bulk layer form the hardmask. In another embodiment, a method of conditioning the components of a plasma processing chamber includes flowing an inert gas comprising argon or helium from a gas applicator into the plasma processing chamber, exposing a substrate support to a plasma within the plasma processing chamber and forming a seasoning layer including metal silicide on an aluminum-based surface of the substrate support.
    Type: Grant
    Filed: July 29, 2020
    Date of Patent: March 16, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Prashant Kumar Kulshreshtha, Jiarui Wang, Kwangduk Douglas Lee, Milind Gadre, Xiaoquan Min, Paul Connors
  • Patent number: 10923334
    Abstract: One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.
    Type: Grant
    Filed: May 3, 2019
    Date of Patent: February 16, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Satya Thokachichu, Edward P. Hammond, IV, Viren Kalsekar, Zheng John Ye, Sarah Michelle Bobek, Abdul Aziz Khaja, Vinay K. Prabhakar, Venkata Sharat Chandra Parimi, Prashant Kumar Kulshreshtha, Kwangduk Douglas Lee
  • Publication number: 20210043455
    Abstract: In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100 C to about 700 C and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300C to about 700C and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000/min, such as up to about 10,000/min or faster.
    Type: Application
    Filed: March 21, 2019
    Publication date: February 11, 2021
    Inventors: Byung Seok KWON, Prashant Kumar KULSHRESHTHA, Kwangduk Douglas LEE, Bushra AFZAL, Sungwon HA, Vinay K. PRABHAKAR, Viren KALSEKAR, Satya Teja Babu THOKACHICHU, Edward P. HAMMOND, IV
  • Publication number: 20210025056
    Abstract: Embodiments of the disclosure relate to an improved electrostatic chuck for use in a processing chamber to fabricate semiconductor devices. In one embodiment, a processing chamber includes a chamber body having a processing volume defined therein and an electrostatic chuck disposed within the processing volume. The electrostatic chuck includes a support surface with a plurality of mesas located thereon, one or more electrodes disposed within the electrostatic chuck, and a seasoning layer deposited on the support surface over the plurality of mesas. The support surface is made from an aluminum containing material. The one or more electrodes are configured to form electrostatic charges to electrostatically secure a substrate to the support surface. The seasoning layer is configured to provide cushioning support to the substrate when the substrate is electrostatically secured to the support surface.
    Type: Application
    Filed: October 8, 2018
    Publication date: January 28, 2021
    Inventors: Prashant Kumar KULSHRESHTHA, Zheng John YE, Kwangduk Douglas LEE, Dong Hyung LEE, Vinay PRABHAKAR, Juan Carlos ROCHA-ALVAREZ, Xiaoquan MIN
  • Publication number: 20210017645
    Abstract: Embodiments of the present invention generally relate to an apparatus for reducing arcing during thick film deposition in a plasma process chamber. In one embodiment, an edge ring including an inner edge diameter that is about 0.28 inches to about 0.38 inches larger than an outer diameter of a substrate is utilized when depositing a thick (greater than two microns) layer on the substrate. The layer may be a dielectric layer, such as a carbon hard mask layer, for example an amorphous carbon layer. With the 0.14 inches to 0.19 inches gap between the outer edge of substrate and the inner edge of the edge ring during the deposition of the thick layer, substrate support surface arcing is reduced while the layer thickness uniformity is maintained.
    Type: Application
    Filed: April 9, 2019
    Publication date: January 21, 2021
    Inventors: Lu XU, Byung Seok KWON, Viren KALSEKAR, Vinay K. PRABHAKAR, Prashant Kumar KULSHRESHTHA, Dong Hyung LEE, Kwangduk Douglas LEE