Patents by Inventor Kwon-Young Choi
Kwon-Young Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080090404Abstract: In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate with a chrome-based under-layer and an aluminum alloy-based over-layer while proceeding in the horizontal direction. The gate line assembly has gate lines, and gate electrodes, and gate pads. A gate insulating layer is deposited onto the insulating substrate such that the gate insulating layer covers the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A data line assembly is formed on the ohmic contact layer with a chrome-based under-layer and an aluminum alloy-based over-layer. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer is deposited onto the substrate, and patterned to thereby form contact holes exposing the drain electrodes, the gate pads, and the data pads.Type: ApplicationFiled: November 29, 2007Publication date: April 17, 2008Inventors: Seung-Taek Lim, Mun-Pyo Hong, Nam-Seok Roh, Young-Joo Song, Sang-Ki Kwak, Kwon-Young Choi, Keun-kyu Song
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Publication number: 20080044996Abstract: Gate lines are formed on a substrate. A gate insulating layer, an intrinsic a—Si layer, an extrinsic a—Si layer, a lower film of Cr and an upper film of Al containing metal are sequentially deposited. A photoresist having thicker first portions on wire areas and thinner second portions on channel areas is formed on the upper film. The upper film on remaining areas are wet-etched, and the lower film and the a—Si layers on the remaining areas are dry-etched along with the second portions of the photoresist. The upper film, the lower film, and the extrinsic a—Si layer on the channel areas are removed. The removal of the upper film and the lower film on the channel areas are performed by wet etching, and the first portions of the photoresist are removed after the removal of the upper film on the channel areas.Type: ApplicationFiled: October 19, 2007Publication date: February 21, 2008Applicant: SAMSUNG ELECTRONICS CO. LTD.Inventors: Bum-Gee BAEK, Kwon-Young CHOI, Young-Joon RHEE, Bong-Joo KANG, Seung-Taek LIM, Hyang-Shik KONG, Won-Joo KIM
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Patent number: 7320906Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode on the first portion of the lower conductive film; removing the second portion of the lower conductive film to expose a portion of the semiconductor layer; and forming a columnar spacer on the exposed portion of the semiconductor layer.Type: GrantFiled: August 19, 2004Date of Patent: January 22, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Min-Wook Park, Bum-Ki Baek, Jeong-Young Lee, Kwon-Young Choi, Sang-Ki Kwak, Sang-Jin Jeon
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Patent number: 7303987Abstract: In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate with a chrome-based under-layer and an aluminum alloy-based over-layer while proceeding in the horizontal direction. The gate line assembly has gate lines, and gate electrodes, and gate pads. A gate insulating layer is deposited onto the insulating substrate such that the gate insulating layer covers the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A data line assembly is formed on the ohmic contact layer with a chrome-based under-layer and an aluminum alloy-based over-layer. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer is deposited onto the substrate, and patterned to thereby form contact holes exposing the drain electrodes, the gate pads, and the data pads.Type: GrantFiled: April 2, 2002Date of Patent: December 4, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Seung-Taek Lim, Mun-Pyo Hong, Nam-Seok Roh, Young-Joo Song, Sang-Ki Kwak, Kwon-Young Choi, Keun-Kyu Song
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Patent number: 7294855Abstract: Gate lines are formed on a substrate. A gate insulating layer, an intrinsic a-Si layer, an extrinsic a-Si layer, a lower film of Cr and an upper film of Al containing metal are sequentially deposited. A photoresist having thicker first portions on wire areas and thinner second portions on channel areas is formed on the upper film. The upper film on remaining areas are wet-etched, and the lower film and the a-Si layers on the remaining areas are dry-etched along with the second portions of the photoresist. The upper film, the lower film, and the extrinsic a-Si layer on the channel areas are removed. The removal of the upper film and the lower film on the channel areas are performed by wet etching, and the first portions of the photoresist are removed after the removal of the upper film on the channel areas.Type: GrantFiled: September 2, 2003Date of Patent: November 13, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Bum-Gee Baek, Kwon-Young Choi, Young-Joon Rhee, Bong-Joo Kang, Seung-Taek Lim, Hyang-Shik Kong, Won-Joo Kim
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Patent number: 7265799Abstract: A method of manufacturing a thin film transistor array panel is provided, the method includes: forming a gate line on an insulating substrate; forming a gate insulating layer; forming a semiconductor layer; forming a data conductive layer including a data line and a drain electrode; depositing a passivation layer; forming a photoresist including a first portion located on an end portion of the gate line, a second portion thicker than the first portion and located on the drain electrode, and a third portion thicker than the second portion; exposing a portion of the passivation layer under the second portion of the photoresist and a portion of the gate insulating layer under the first portion of the photoresist by etching using the photoresist as an etch mask; forming first and second contact holes exposing the drain electrode and the end portions of the gate line, respectively; and forming a pixel electrode connected to the drain electrode through the first contact hole.Type: GrantFiled: January 16, 2004Date of Patent: September 4, 2007Assignee: Samsung Electronics Co., LtdInventors: Jun-Hyung Souk, Jeong-Young Lee, Jong-Soo Yoon, Kwon-Young Choi, Bum-Ki Baek
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Publication number: 20070200981Abstract: A method of manufacturing a thin film transistor array panel is provided, the method includes: forming a gate line on an insulating substrate; forming a gate insulating layer; forming a semiconductor layer; forming a data conductive layer including a data line and a drain electrode; depositing a passivation layer; forming a photoresist including a first portion located on an end portion of the gate line, a second portion thicker than the first portion and located on the drain electrode, and a third portion thicker than the second portion; exposing a portion of the passivation layer under the second portion of the photoresist and a portion of the gate insulating layer under the first portion of the photoresist by etching using the photoresist as an etch mask; forming first and second contact holes exposing the drain electrode and the end portions of the gate line, respectively; and forming a pixel electrode connected to the drain electrode through the first contact hole.Type: ApplicationFiled: April 27, 2007Publication date: August 30, 2007Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jun-Hyung SOUK, Jeong-Young Lee, Jong-Soo Yoon, Kwon-Young Choi, Bum-Ki Baek
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Publication number: 20070190706Abstract: A method of manufacturing a thin film transistor array panel is provided, the method includes: forming a gate line on an insulating substrate; forming a gate insulating layer; forming a semiconductor layer; forming a data conductive layer including a data line and a drain electrode; depositing a passivation layer; forming a photoresist including a first portion located on an end portion of the gate line, a second portion thicker than the first portion and located on the drain electrode, and a third portion thicker than the second portion; exposing a portion of the passivation layer under the second portion of the photoresist and a portion of the gate insulating layer under the first portion of the photoresist by etching using the photoresist as an etch mask; forming first and second contact holes exposing the drain electrode and the end portions of the gate line, respectively; and forming a pixel electrode connected to the drain electrode through the first contact hole.Type: ApplicationFiled: March 23, 2007Publication date: August 16, 2007Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jun-Hyung Souk, Jeong-Young Lee, Jong-Soo Yoon, Kwon-Young Choi, Bum-Ki Baek
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Publication number: 20070091220Abstract: A thin film transistor array panel is provided, which includes: a substrate; a first signal line formed on the substrate; a second signal line formed on the substrate and intersecting the first signal line; a thin film transistor including a gate electrode connected to the first signal line and having an edge substantially parallel to the first signal line, a source electrode connected to the second signal line, and a drain electrode overlapping the edge of the gate electrode; and a pixel electrode connected to the drain electrode.Type: ApplicationFiled: December 18, 2006Publication date: April 26, 2007Inventors: Sahng-Ik Jun, Jae-Hong Jeon, Kwon-Young Choi, Jeong-Young Lee
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Publication number: 20060289965Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode and a pair of redundant electrodes on the first and the second portions of the lower conductive film, respectively, the redundant electrodes exposing a part of the second portion of the lower conductive film; removing the exposed part of the second portion of the lower conductive film to expose a portion of the semiconType: ApplicationFiled: August 30, 2006Publication date: December 28, 2006Inventors: Min-Wook Park, Sang-Jin Jeon, Jung-Joon Park, Jeong-Young Lee, Bum-Ki Baek, Se-Hwan Yu, Sang-Ki Kwak, Han-Ju Lee, Kwon-Young Choi
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Patent number: 7151279Abstract: A thin film transistor array panel is provided, which includes: a substrate; a first signal line formed on the substrate; a second signal line formed on the substrate and intersecting the first signal line; a thin film transistor including a gate electrode connected to the first signal line and having an edge substantially parallel to the first signal line, a source electrode connected to the second signal line, and a drain electrode overlapping the edge of the gate electrode; and a pixel electrode connected to the drain electrode.Type: GrantFiled: September 29, 2004Date of Patent: December 19, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Sahng-Ik Jun, Jae-Hong Jeon, Kwon-Young Choi, Jeong-Young Lee
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Patent number: 7142279Abstract: In a method of manufacturing a liquid crystal display using a divisional exposure for a substrate, an overlapping area at the boundary between adjacent shots is provided and the shots left and right to the boundary are exposed in a way that the areas of the shots gradually decreases and gradually increases, respectively, to reduce the brightness difference due to stitch errors between the two shots. For example, the number of unit stitch areas assigned to the left gradually decreases and the number of unit stitch areas assigned to the right shot gradually increases as it goes to the right along the transverse direction in the stitch area. A unit stitch includes an area obtained by dividing a pixel into at least two parts.Type: GrantFiled: September 18, 2002Date of Patent: November 28, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Mi Tak, Woon-Yong Park, Kwon-Young Choi, Myung-Jae Park
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Patent number: 7119368Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode and a pair of redundant electrodes on the first and the second portions of the lower conductive film, respectively, the redundant electrodes exposing a part of the second portion of the lower conductive film; removing the exposed part of the second portion of the lower conductive film to expose a portion of the semiconType: GrantFiled: August 26, 2004Date of Patent: October 10, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Min-Wook Park, Sang-Jin Jeon, Jung-Joon Park, Jeong-Young Lee, Bum-Ki Baek, Se-Hwan Yu, Sang-Ki Kwak, Han-Ju Lee, Kwon-Young Choi
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Patent number: 6977711Abstract: An LCD having a plurality of test pads applied with a common voltage, covered with respective shielding conductor or located sufficiently far from pixels. A gate wire including pluralities of gate lines and test pads disconnected from the gate lines and located near one ends of the gate lines, and a common electrode wire including a plurality of common electrodes and a common electrode pad connected to the common electrode electrodes are formed on a substrate, and covered with a gate insulating film. A data wire and a pixel electrode wire are formed thereon and covered with a passivation film. The passivation film and the gate insulating film have contact holes exposing the test pads and the common electrode pad. A plurality of connecting members which are connected to the test pads and the common electrode pad through the contact holes are formed on the passivation film.Type: GrantFiled: October 26, 2001Date of Patent: December 20, 2005Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-Ki Kwak, Kwon-Young Choi, Young-Jae Tak, Myung-Jae Park, Woon-Yong Park
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Publication number: 20050110014Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode on the first portion of the lower conductive film; removing the second portion of the lower conductive film to expose a portion of the semiconductor layer; and forming a columnar spacer on the exposed portion of the semiconductor layer.Type: ApplicationFiled: August 19, 2004Publication date: May 26, 2005Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Min-Wook Park, Bum-Ki Baek, Jeong-Young Lee, Kwon-Young Choi, Sang-Ki Kwak, Sang-Jin Jeon
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Publication number: 20050104069Abstract: A thin film transistor array panel is provided, which includes: a substrate; a first signal line formed on the substrate; a second signal line formed on the substrate and intersecting the first signal line; a thin film transistor including a gate electrode connected to the first signal line and having an edge substantially parallel to the first signal line, a source electrode connected to the second signal line, and a drain electrode overlapping the edge of the gate electrode; and a pixel electrode connected to the drain electrode.Type: ApplicationFiled: September 29, 2004Publication date: May 19, 2005Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sahng-Ik Jun, Jae-Hong Jeon, Kwon-Young Choi, Jeong-Young Lee
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Publication number: 20050082535Abstract: A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper conductive film on the semiconductor layer; photo-etching the upper conductive film, the lower conductive film, and the semiconductor layer; depositing a passivation layer; photo-etching the passivation layer to expose first and second portions of the upper conductive film; removing the first and the second portions of the upper conductive film to expose first and second portions of the lower conductive film; forming a pixel electrode and a pair of redundant electrodes on the first and the second portions of the lower conductive film, respectively, the redundant electrodes exposing a part of the second portion of the lower conductive film; removing the exposed part of the second portion of the lower conductive film to expose a portion of the semiconType: ApplicationFiled: August 26, 2004Publication date: April 21, 2005Inventors: Min-Wook Park, Sang-Jin Jeon, Jung-Joon Park, Jeong-Young Lee, Bum-Ki Baek, Se-Hwan Yu, Sang-Ki Kwak, Han-Ju Lee, Kwon-Young Choi
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Publication number: 20040238825Abstract: In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate with a chrome-based under-layer and an aluminum alloy-based over-layer while proceeding in the horizontal direction. The gate line assembly has gate lines, and gate electrodes, and gate pads. A gate insulating layer is deposited onto the insulating substrate such that the gate insulating layer covers the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A data line assembly is formed on the ohmic contact layer with a chrome-based under-layer and an aluminum alloy-based over-layer. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer is deposited onto the substrate, and patterned to thereby form contact holes exposing the drain electrodes, the gate pads, and the data pads.Type: ApplicationFiled: July 1, 2004Publication date: December 2, 2004Inventors: Seung-Taek Lim, Mun-Pyo Hong, Nam-Seok Roh, Young-Joo Song, Sang-Ki Kwak, Kwon-Young Choi, Keun-Kyu Song
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Publication number: 20040207798Abstract: In a method of manufacturing a liquid crystal display using a divisional exposure for a substrate, an overlapping area at the boundary between adjacent shots is provided and the shots left and right to the boundary are exposed in a way that the areas of the shots gradually decreases and gradually increases, respectively, to reduce the brightness difference due to stitch errors between the two shots. For example, the number of unit stitch areas assigned to the left gradually decreases and the number of unit stitch areas assigned to the right shot gradually increases as it goes to the right along the transverse direction in the stitch area. A unit stitch includes an area obtained by dividing a pixel into at least two parts.Type: ApplicationFiled: September 23, 2003Publication date: October 21, 2004Inventors: Young-Mi Tak, Woon-Yong Park, Kwon-Young Choi, Myung-Jae Park
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Publication number: 20040183955Abstract: A method of manufacturing a thin film transistor array panel is provided, the method includes: forming a gate line on an insulating substrate; forming a gate insulating layer; forming a semiconductor layer; forming a data conductive layer including a data line and a drain electrode; depositing a passivation layer; forming a photoresist including a first portion located on an end portion of the gate line, a second portion thicker than the first portion and located on the drain electrode, and a third portion thicker than the second portion; exposing a portion of the passivation layer under the second portion of the photoresist and a portion of the gate insulating layer under the first portion of the photoresist by etching using the photoresist as an etch mask; forming first and second contact holes exposing the drain electrode and the end portions of the gate line, respectively; and forming a pixel electrode connected to the drain electrode through the first contact hole.Type: ApplicationFiled: January 16, 2004Publication date: September 23, 2004Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jun-Hyung Souk, Jeong-Young Lee, Jong-Soo Yoon, Kwon-Young Choi, Bum-Ki Baek