Abstract: A thin film transistor is provided. The thin film transistor comprises a gate electrode, an In—Zn—Sn oxide (IZTO) channel layer that overlaps the top or bottom of the gate electrode and has a spinel single-phase crystalline, a gate insulating layer disposed between the gate electrode and the IZTO channel layer, and source and drain electrodes respectively connected to both ends of the IZTO channel layer.

Abstract: A secondary battery includes an electrode assembly including an anode, a cathode, and a separator disposed between the anode and the cathode; and an electrolyte composition with which the electrode assembly is impregnated. The anode is provided on at least one side of an anode collector, and has an anode active layer including, as an active anode material, a lithium metal oxide represented by Formula 1 below. The electrolyte composition contains a lithium salt and a non-aqueous organic solvent, the non-aqueous organic solvent containing, based on the total weight of the non-aqueous organic solvent, 60% by weight or more of a cyclic ester-based solvent represented by Formula 2 below.

Abstract: The present invention relates to a method and apparatus for efficiently controlling access for system load adjustment in mobile communication systems. A method for transmitting and receiving data by a terminal including a user equipment (UE) non access stratum (NAS) and a UE access stratum (AS) includes the steps of: receiving by the UE AE, information including emergency call-related information which includes barring information by type for the emergency call, from a base station; transmitting, by the UE NAS, a service request for the emergency call to the UE AS; and determining, by the UE AS, whether to bar the service request on the basis of emergency call-related information. During an emergency call transmission, network congestion can be easily controlled by enabling various types of emergency calls to be transmitted, and enabling access to be barred information according to the situation of a communication network and types of emergency calls.

Abstract: A display device includes first and second substrates each including a short side and a long side, ground parts located on at least one of the short and long sides of each of the first and second substrates and including at least one first ground surfaces, which are perpendicular to opposing surfaces of the first and second substrates, and at least one second ground surfaces, which are provided at at least one edge of the second substrate to define an obtuse angle with reference to the first ground surfaces, and unevenness disposed on the first ground surfaces along a first direction, where the unevenness defines an acute angle with reference to a normal line to the opposing surfaces.

Abstract: An identification key generation circuit using process deviation comprises a first semiconductor element portion and a second semiconductor element portion manufactured on a single semiconductor substrate and have different physical characteristics, an identification key generation portion generating an identification key using at least one of a difference in electrical characteristics of the first semiconductor element portion due to a process deviation occurring in the manufacturing process of the first semiconductor element portion and an identification key derivation portion determining the difference in electrical characteristic as a digital value, wherein the first semiconductor element portion is formed on the semiconductor substrate, and the second semiconductor element portion is formed on the upper portion of the first semiconductor element portion, and wherein the first semiconductor element portion and the second semiconductor element portion are connected to each other through at least one layer

Abstract: A display device is disclosed that includes a base substrate, an organic light emitting element disposed on the base substrate, an insulating layer disposed on the base substrate and containing silicon oxide, and a thin film transistor disposed on the base substrate and electrically connected to the organic light emitting element, wherein the thin film transistor includes a semiconductor pattern disposed on the base substrate and including a channel area in contact with the insulating layer, and a gate electrode overlapping the channel area on a plane, wherein the semiconductor pattern contains indium gallium zinc tin oxide.

Abstract: The present disclosure relates to a pre-5th-generation (5G) or 5G communication system to be provided for supporting higher data rates beyond 4th-generation (4G) communication system such as a long term evolution (LTE). A method for communication by a base station is provided. The method includes transmitting a scheduling assignment including a first part of a destination identifier (ID), and transmitting a medium access control (MAC) protocol data unit (PDU) including a MAC header including a user equipment (UE) ID and a second part of the destination ID.

Abstract: A lithium secondary battery including a negative electrode comprising a carbon material as a negative electrode active material, a positive electrode comprising a positive electrode active material of Formula 2, a separator interposed between the negative electrode and the positive electrode, and a non-aqueous electrolyte comprising a lithium salt; a non-aqueous organic solvent; a first additive represented by Formula 1; and a second additive which is at least one selected from the group consisting of vinylene carbonate and vinylethylene carbonate is described, in Formulas 1 and 2, all the variables are described herein.

Abstract: An electrolyte composition and a lithium secondary battery including the same are disclose herein. The electrolyte composition has improved high temperature safety. In some embodiments, the electrolyte composition includes an additive including a compound represented by Formula 1. Each R1 is independently a single bond, an alkylene group having 1 to 10 carbon atoms, or each R2 is independently a double or triple bond including 2 carbon atoms, each R3 is independently hydrogen or an alkyl group having 1 to 4 carbon atoms, and a is an integer of 1 to 10. The additive may reinforce an SEI layer on the surface of an electrode, thereby having advantages of improved storage and lifetime characteristics at a high temperature and a decreased amount of gas generated in the battery.

Abstract: The semiconductor device includes a substrate, a stack structure including gate patterns and interlayer insulating films that are alternately stacked on the substrate, an insulating pillar extending in a thickness direction of the substrate within the stack structure, a polycrystalline metal oxide film extending along a sidewall of the insulating pillar between the insulating pillar and the stack structure, a liner film having a transition metal between the insulating pillar and the polycrystalline metal oxide film, and a tunnel insulating film, a charge storage film, and a blocking insulating film which are disposed in order between the polycrystalline metal oxide film and the gate patterns.

Abstract: The present disclosure relates to converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT), and may be applied to intelligent services, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method according to disclosed aspects includes receiving a first control message including a first random access response window for a first cell group, receiving a second control message for adding a second cell group, including information on a second random access response window size for the second cell group, transmitting, on a cell of the second cell group, a random access preamble, and monitoring, on the cell of the second cell group, a random access response based on the second random access response window size for the second cell group.

Abstract: Disclosed are a memory device based on an IGO channel layer and a method of fabricating the same. More particularly, the memory device according to an embodiment includes multilayers including at least one transition metal; and a channel layer formed adjacent to the multilayers and configured to include an indium gallium oxide (IGO) material.

Abstract: The present disclosure aims at providing a gel polymer electrolyte which has a great effect of inhibiting leakage of an organic solvent by confining the organic solvent in a three-dimensional polymer network and has oxidation stability, flame retardancy, thermal stability, and excellent lithium ion conductivity. In order to achieve the above object, the present disclosure provides a gel polymer electrolyte including a cross-linked polymer having a thiol-ene structure, wherein the thiol-ene structure is formed by a click reaction of a thiol group of a thiol compound containing at least four reactive thiol groups per molecule and an acrylic group of a fluorinated polyether diacrylate.

Abstract: Disclosed herein relates to a novel non-aqueous electrolyte additive and a lithium secondary battery including the same, wherein the additive for the non-aqueous electrolyte additive can form a film on the surface of the electrode during the activation of the rechargeable battery to prevent a large amount of gas from being generated under high temperature conditions by including an ionic compound represented by Formula 1, and can prevent metal ions from eluting from the electrode to cause a decrease in the OCV and a decrease in the capacity retention rate of the cell, thereby effectively improving the durability, performance and high temperature safety of the cell.

Abstract: The present disclosure relates to an additive for a non-aqueous electrolyte, which includes a compound represented by Formula 1 capable of improving life characteristics of a lithium secondary battery by forming a stable and low-resistance electrode-electrolyte interface even at a high temperature, and a non-aqueous electrolyte and a lithium secondary battery which include the same.

Abstract: A non-aqueous electrolyte solution for a lithium secondary battery and a lithium secondary battery including the same are described herein. Specifically, the non-aqueous electrolyte solution for a lithium secondary battery includes a lithium salt, an organic solvent and a compound represented by Formula 1 to form a robust SEI film, thereby improving battery performance: Wherein R1 to R3 are described herein.

Abstract: Provided is a lithium secondary battery including a positive electrode, a negative electrode, a separator, and a non-aqueous electrolyte, wherein the positive electrode includes a positive electrode active material comprising lithium iron phosphate particles, and the positive electrode has a loading amount of 450 mg/25 cm2 to 740 mg/25 cm2, and the non-aqueous electrolyte includes a lithium salt, an organic solvent, and an additive, wherein the organic solvent includes ethylene carbonate, and dimethyl carbonate, and the dimethyl carbonate is included in 5 vol % to 75 vol % in the organic solvent, and the additive contains vinylene carbonate, and the weight ratio of the vinylene carbonate to the dimethyl carbonate is greater than 0 to 0.2 or less.

Abstract: An electrolyte additive comprising a compound represented by Formula 1 below forms a coating film on an electrode surface in the activation of a secondary battery, thereby the generation of a large amount of gas under a high temperature condition can be prevented, and a cell OCV drop and a decrease in capacity retention rate, which are caused by elution of metal ions from an electrode, can be effectively prevented, resulting in effective improvement in durability, performance and high-temperature safety of the battery, wherein R1, R2, and M are described herein.

Abstract: Provided are a selection element which does not need an intermediate electrode and thus has improved integration, a phase-change memory device having the selection element, and a phase-change memory implemented so that the phase-change memory device has a highly integrated three-dimensional architecture.

Abstract: A method and user equipment (UE) for obtaining power headroom information in a communication system are provided. The method includes acquiring information for a path loss reference, wherein the information for the path loss reference indicates whether the UE applies as the path loss reference either a downlink of a primary cell or a downlink of a secondary cell (SCell), triggering a power headroom report (PHR) if a prohibitPHR-Timer expires and a path loss is changed more than a threshold for at least one activated cell which is used as the path loss reference, and obtaining power headroom information for each activated cell, if extended PHR is used and an uplink resource is allocated for new transmission.