Abstract: A lithium secondary battery has excellent economic feasibility and safety because an iron phosphate of Formula 2 having an olivine structure is included as a positive electrode active material, and also has advantages of excellent battery performance and lifespan because an electrolyte additive of Formula 1 having a specific molecular weight is included in an electrolyte to improve an increase in internal resistance of the battery during charging and discharging and effectively prevent iron ions from being exsolved from the positive electrode active material, wherein R1to R5, p, q, r, m and n are described herein.

Abstract: The present technology relates to a lithium secondary battery. The lithium secondary battery has advantages of excellent high-rate discharge characteristics at room temperature as well as excellent discharge efficiency at low temperature when a coating layer containing specific contents of a lithium element, a sulfur element, and a nitrogen element is provided on a positive electrode mixture layer including a positive electrode active material.

Abstract: A lithium secondary battery includes Li6CoO4 containing excess lithium, or the like as an irreversible additive in a positive electrode, and at the same time, includes an electrolyte additive of Formula 1 having a specific molecular weight in an electrolyte to realize low battery resistance and effectively prevent metal ions from being exsolved from the irreversible additive, and thus has advantages of excellent battery performance and lifespan, wherein R1 to R5, p, q, r, m and n are described herein.

Abstract: A thin-film transistor comprises a substrate; an insulating layer formed on the substrate; an active layer formed on the insulating layer; and source and drain electrode layers formed on the active layer so as to be spaced from each other, wherein the active layer comprises: a first oxide semiconductor layer consisting of In, Ga and O; and a second oxide semiconductor layer which is formed on the first oxide semiconductor layer and which consists of Zn and O. The thin-film transistor having metal oxide semiconductor layers of a heterojunction structure has greatly improved electron mobility by comprising, as an active layer, oxide semiconductor layers of a heterojunction structure. In addition, the physical properties of a thin-film transistor to be manufactured can be controlled by adjusting the composition and thickness of oxide semiconductor layers through an atomic layer deposition (ALD) process.

Abstract: The present invention relates to a method and an apparatus for logging a radio resource control (RRC) failure of user equipment (UE) and receiving the log. According to one embodiment of the present invention, a method for logging an RRC failure of UE may comprise the steps of: attempting random access; if the failure of random access is sensed, logging information on the failure; and if the success of random access is sensed, transmitting information on the failure logged before the success to a connected base station. According to one embodiment of the present invention, an apparatus and a method which effectively log a channel state or a connection failure can be provided.

Abstract: A thin-film transistor includes a gate electrode, and an active layer insulated from the gate electrode by a gate insulating layer, and the active layer includes a quasi-superlattice structure with a first oxide semiconductor material and a second oxide semiconductor material having a larger bandgap than the first oxide semiconductor material alternately stacked at least twice. A display apparatus includes a thin-film transistor including an active layer of a quasi-superlattice structure for each pixel.

Abstract: An electrolyte composition and a lithium secondary battery including the same are disclose herein. The electrolyte composition has improved high temperature safety. In some embodiments, the electrolyte composition includes an additive including a compound represented by Formula 1. Each R1 is independently a single bond, an alkylene group having 1 to 10 carbon atoms, or each R2 is independently a double or triple bond including 2 carbon atoms, each R3 is independently hydrogen or an alkyl group having 1 to 4 carbon atoms, and a is an integer of 1 to 10. The additive may reinforce an SEI layer on the surface of an electrode, thereby having advantages of improved storage and lifetime characteristics at a high temperature and a decreased amount of gas generated in the battery.

Abstract: An electronic device includes; an intellectual property (IP) block, a thermal management unit (TMU) that detects a temperature associated with the IP block to generate a detected temperature, a clock management unit (CMU) that generates an operating clock and provides the operating clock to the IP block, a clock generator that controls operation of the CMU in generating the operating clock, a power management unit (PMU) that generates a supply voltage provided to the CMU, and a dynamic voltage frequency scaling (DVFS) block.

Abstract: The present disclosure relates to converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT), and may be applied to intelligent services, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. A method according to disclosed aspects includes receiving a first control message including a first random access response window for a first cell group, receiving a second control message for adding a second cell group, including information on a second random access response window size for the second cell group, transmitting, on a cell of the second cell group, a random access preamble, and monitoring, on the cell of the second cell group, a random access response based on the second random access response window size for the second cell group.

Abstract: The present invention relates to a method and apparatus for efficiently controlling access for system load adjustment in mobile communication systems. A method for transmitting and receiving data by a terminal including a user equipment (UE) non access stratum (NAS) and a UE access stratum (AS) includes the steps of: receiving by the UE AE, information including emergency call-related information which includes barring information by type for the emergency call, from a base station; transmitting, by the UE NAS, a service request for the emergency call to the UE AS; and determining, by the UE AS, whether to bar the service request on the basis of emergency call-related information. During an emergency call transmission, network congestion can be easily controlled by enabling various types of emergency calls to be transmitted, and enabling access to be barred information according to the situation of a communication network and types of emergency calls.

Abstract: An additive for a non-aqueous electrolyte, a non-aqueous electrolyte including the same, and a lithium secondary battery including the same are disclosed herein. The additive includes an ionic compound to form a coating film on an electrode surface, thereby preventing gas generation at high temperature, a cell open-circuit voltage (OCV) drop, and a decrease in capacity retention rate, which are caused by elution of metal ions from an electrode. The additive improves durability, performance, and high temperature safety of the battery.

Abstract: An apparatus, circuit, and method for controlling a service access in a packet data communication system are provided. The method includes broadcasting information related to whether a service access to a specific service is possible.

Abstract: A method for reporting performance of a terminal in a mobile communication system includes the steps of receiving a request for performance reporting from a base station, determining an indicator of whether a delay time related operation that the terminal supports is in correspondence with the request which corresponds to a pre-set condition, and transmitting a message including the determined indicator to the base station. The size of the performance reporting message may be minimized in reporting the performance of the terminal.

Abstract: A crystalline IZTO oxide semiconductor and a thin film transistor having the same are provided. The thin film transistor includes a gate electrode, a crystalline In—Zn—Sn oxide (IZTO) channel layer overlapping the upper or lower portions of the gate electrode and having hexagonal crystal grains, and a gate insulating layer disposed between the gate electrode and the IZTO channel layer, and source and drain electrodes respectively connected to both ends of the IZTO channel layer.

Abstract: A display device includes first and second substrates each including a short side and a long side, ground parts located on at least one of the short and long sides of each of the first and second substrates and including at least one first ground surfaces, which are perpendicular to opposing surfaces of the first and second substrates, and at least one second ground surfaces, which are provided at at least one edge of the second substrate to define an obtuse angle with reference to the first ground surfaces, and unevenness disposed on the first ground surfaces along a first direction, where the unevenness defines an acute angle with reference to a normal line to the opposing surfaces.

Abstract: Method for radio communication with base station, by user equipment (UE), apparatus in UE for radio communication with base station, a method for radio communication with a UE by a base station, and an apparatus in a base station for radio communication with a UE are provided. The method for radio communication with a base station, by a UE, includes determining whether to start a first timer based on a predetermined condition, in response to a buffer status reporting triggered; starting the first timer in response to the predetermined condition being satisfied; in response to an uplink resource for a buffer status report transmission being available before the first timer expires, transmitting an uplink packet including a buffer status report using the available uplink resource; and in response to no uplink resource for the buffer status report transmission being available and the first timer expiring, transmitting a scheduling request to the base station.

Abstract: A thin film transistor and a non-volatile memory device are provided. The thin film transistor comprises a gate electrode, and a metal oxide channel layer traversing the upper or lower portions of the gate electrode. The metal oxide channel layer has semiconductor properties while having bixbyite crystals. An insulating layer is disposed between the gate electrode and the metal oxide channel layer. Source and drain electrodes are electrically connected to both ends of the metal oxide channel layer, respectively.

Abstract: The present disclosure relates to a pre-5th-generation (5G) or 5G communication system to be provided for supporting higher data rates beyond 4th-generation (4G) communication system such as a long term evolution (LTE). A method for communication by a base station is provided. The method includes transmitting a scheduling assignment including a first part of a destination identifier (ID), and transmitting a medium access control (MAC) protocol data unit (PDU) including a MAC header including a user equipment (UE) ID and a second part of the destination ID.

Abstract: Provided are a three-dimensional semiconductor memory device, a method for manufacturing the same, a method for operating the same, and an electronic system including the same. The three-dimensional semiconductor memory device includes a substrate, a stack structure on the substrate, and vertical channel structures, which are provided in channel holes penetrating the stack structure, wherein each of the vertical channel structures includes a data storage pattern, a vertical channel pattern, a conductive pad, and a vertical semiconductor pattern, wherein the vertical channel pattern includes a first portion contacting the upper surface of the substrate and a second portion provided between the data storage pattern and the vertical semiconductor pattern, and wherein the vertical semiconductor pattern is spaced apart from the substrate with the first portion of the vertical channel pattern therebetween.

Abstract: Methods and apparatuses are provided for transmitting and receiving system information (SI). A method for receiving SI by a user equipment (UE) in a mobile communication system includes receiving, by the UE, the SI including first partial bits of a system frame number (SFN) without second partial bits of the SFN on a broadcast channel (BCH) at a first subframe of a radio frame, the first partial bits of the SFN having the same value during a predetermined N successive radio frames of a BCH transmission period, where N is a positive integer; and acquiring, by the UE, the second partial bits of the SFN for the radio frame, the second partial bits of the SFN having different values in different radio frames of the predetermined N successive radio frames of the BCH transmission period.