Abstract: A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

Abstract: A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.

Abstract: A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

Abstract: A cleaning method that removes contaminants adhering to a stage in a chamber, includes: setting a pressure in a chamber to a predetermined vacuum pressure; supplying a first gas that forms a shock wave toward the stage; and supplying a second gas that does not form the shock wave toward the stage.

Abstract: A substrate processing device includes a processing container; a substrate holder configured to hold a substrate arranged within the processing container; a gas nozzle configured to spray gas within the processing container; a controller configured to control collision of the gas with the substrate held by the substrate holder. The controller is configured to remove particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

Abstract: The present invention provides a substrate stage and a substrate processing apparatus that appropriately control a temperature of a staging surface on which a substrate is placed. The substrate stage includes a stage base including a cooling surface therein, and a supply flow path forming member formed of a material having a lower thermal conductivity than that of the stage base and including cooling nozzles configured to spray a coolant toward the cooling surface.

Abstract: A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

Abstract: The present invention provides a substrate stage and a substrate processing apparatus that appropriately control a temperature of a staging surface on which a substrate is placed. The substrate stage includes a stage base including a cooling surface therein, and a supply flow path forming member formed of a material having a lower thermal conductivity than that of the stage base and including cooling nozzles configured to spray a coolant toward the cooling surface.

Abstract: A cleaning method that removes contaminants adhering to a stage in a chamber, includes: setting a pressure in a chamber to a predetermined vacuum pressure; supplying a first gas that forms a shock wave toward the stage; and supplying a second gas that does not form the shock wave toward the stage.

Abstract: A gas supply member includes a straight flow path having a straight-line shape and a first end to be supplied with a gas, a gas discharge port branched from the straight flow path and a gas circulation path extending along an extension line of the straight flow path, connected to a second end of the straight flow path, and configured to collect foreign substances contained in the gas supplied to the straight flow path.

Abstract: According to the present invention, a substrate processing apparatus has a chamber (1), a stage (4) for holding a substrate (W) to be processed in the chamber (1), and a nozzle part (13) from which a gas cluster is blasted onto the substrate (W) to be processed, and has a function for processing the substrate (W) to be processed by the gas cluster. Cleaning of the inside of the chamber (1) is performed by: placing a prescribed reflecting member (dW, 60) in the chamber (1), blasting a gas cluster (C) onto the reflecting member (dW, 60), and applying the gas-cluster flow reflected by the reflecting member (dW, 60) onto a wall section of the chamber (1) to remove particles (P) adhered to the wall section of the chamber (1).

Abstract: There is provided a substrate processing apparatus which includes a substrate holding part configured to hold a substrate; a drying liquid supply part configured to supply a drying liquid toward a front surface of the substrate held by the substrate holding part; a temperature adjustment part configured to change a temperature of the front surface of the substrate; and a controller configured to control the temperature adjustment part, wherein the controller controls the temperature adjustment part to generate a temperature difference in a liquid film of the drying liquid supplied onto the front surface of the substrate.

Abstract: A method and system for determining and displaying lightning potential information is provided. The method includes receiving a radar data and temperature data for a grid location. If the radar data is above a radar threshold and the temperature data is below a temperature threshold a predictor field is computed. One or more predictor fields may be used to determine a lightning potential. Fuzzy logic may be used to combine predictor fields into a lightning potential. A grid of lightning potential values may be used to determine the lightning potential at a target location, or to indicate the lightning potential in a region outside an inner outlook region including the target location. A display may include an icon with an inner and outer portion displaying lightning potential in an inner and outer outlook region. A display may further include future lightning potential information.

Abstract: According to the present invention, a substrate processing apparatus has a chamber (1), a stage (4) for holding a substrate (W) to be processed in the chamber (1), and a nozzle part (13) from which a gas cluster is blasted onto the substrate (W) to be processed, and has a function for processing the substrate (W) to be processed by the gas cluster. Cleaning of the inside of the chamber (1) is performed by: placing a prescribed reflecting member (dW, 60) in the chamber (1), blasting a gas cluster (C) onto the reflecting member (dW, 60), and applying the gas-cluster flow reflected by the reflecting member (dW, 60) onto a wall section of the chamber (1) to remove particles (P) adhered to the wall section of the chamber (1).

Abstract: A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.

Abstract: A gas supply member includes a straight flow path having a straight-line shape and a first end to be supplied with a gas, a gas discharge port branched from the straight flow path and a gas circulation path extending along an extension line of the straight flow path, connected to a second end of the straight flow path, and configured to collect foreign substances contained in the gas supplied to the straight flow path.

Abstract: A substrate transfer system includes a substrate transfer part capable of transferring a substrate while holding the substrate, an elevating mechanism including a support axis extending in an upper-lower direction and being capable of moving the substrate transfer part along the support axis within a predetermined range, a first exhaust port located at a position selected from at least one of on the supporting axis and near the supporting axis above an upper limit of the predetermined range, a second exhaust port located at a position selected from at least one of on the supporting axis and near the supporting axis below a lower limit of the predetermined range, and an exhaust part connected such that exhaust is available through the first exhaust port and the second exhaust port.

Abstract: A particle concentration mechanism including: a hollow member made of a conductor and having a space therein, through which the particles in a charged state flow together with a gas; a particle collecting nozzle made of a conductor which is inserted into the space within the hollow member and configured to collect the charged particles within the hollow member; an insulating member configured to insulate the hollow member from the particle collecting nozzle; and a DC power source configured to apply a DC voltage between the hollow member and the particle collecting nozzle. When the DC voltage is applied between the hollow member and the particle collecting nozzle, an electrostatic force directed to an inlet of the particle collecting nozzle acts on the charged particles within the hollow member, and the particles are guided into the particle collecting nozzle and concentrated.

Abstract: A substrate transfer system includes a substrate transfer part capable of transferring a substrate while holding the substrate, an elevating mechanism including a support axis extending in an upper-lower direction and being capable of moving the substrate transfer part along the support axis within a predetermined range, a first exhaust port located at a position selected from at least one of on the supporting axis and near the supporting axis above an upper limit of the predetermined range, a second exhaust port located at a position selected from at least one of on the supporting axis and near the supporting axis below a lower limit of the predetermined range, and an exhaust part connected such that exhaust is available through the first exhaust port and the second exhaust port.

Abstract: A vaporizing unit, in supplying a gas material produced by vaporizing a liquid material onto a substrate to conduct a film forming process, can vaporize the liquid material with high efficiency to suppress generation of particles. With the vaporizing unit, positively or negatively charged bubbles, which have a diameter of 1000 nm or less, are produced in the liquid material, and the liquid material is atomized to form a mist of the liquid material. Further, the mist of the liquid material is heated and vaporized. The fine bubbles are uniformly dispersed in advance in the liquid material, so that very fine and uniform mist particles of the liquid material are produced when the liquid material is atomized, which makes heat exchange readily conducted. By vaporizing the mist of the liquid material, vaporization efficiency is enhanced, and generation of particles can be suppressed.