Abstract: The present invention provides a server apparatus, which can fetch image data in a desired state and a system including the server apparatus. In the server apparatus, received designation information is analyzed. When specific profile data is designated by profile designation information, the designated profile data is fetched from profile DB. When “profile data is embedded” is designated by transmission method designation information of the designation information, after the fetched profile data is embedded in the image data and then transmitted to a terminal device. When “conversion is performed by profile” is designated by the transmission method designation information, the image data is subjected to color conversion, resolution conversion, or affine conversion based on the fetched profile data and then transmitted to the terminal device.

Abstract: The present invention provides a particle measuring system which is provided in a processing system 40 which generates an atmosphere obtained by exhausting air or a gas in a processing chamber 48 by a vacuum pump 98 and applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipe 90 which connects an exhaust opening 86 of the processing chamber 48 with the vacuum pump 98, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.

Abstract: The present invention provides a particle-measuring system and the particle measuring method that is provided in a processing system for generating an atmosphere including atmospheric air or a gas exhausted from within a processing chamber by a vacuum pump, and for processing a wafer W relating to a semiconductor manufacturing in this atmosphere, and that is installed on an exhaust pipe connecting between an exhaust opening of the processing chamber and the vacuum pump, for measuring the number of particles included in the exhaust gas.

Abstract: A processing apparatus 51 includes a processing container 53 having a wafer W arranged therein, an activated-gas seeds induction port 79 for supplying activated N2-gas and H2-gas into the processing container 53 and nozzle orifices 105 for supplying NF3-gas activated by both N2-gas and H2-gas on activation. Thus, the processing apparatus allows N2-gas and H2-gas to activate NF3-gas, so that the wafer W is processed by the activated NF3-gas. The activated-gas seeds induction port 79 and the nozzle orifices 105 are together formed in a top plate 71 of the processing container 53, realizing an uniform distribution of NF3-gas on the object to be processed in the processing chamber.