Abstract: A mouthpiece-type treatment device is capable of treating inflammation in the oral cavity such as in the gums by having a light irradiating means inside the mouthpiece, and has a plurality of modules that can be detached from the mouthpiece so as to be usable by both children and adults regardless of the size of the oral cavity. The device further includes: a main body having a mouthpiece which is inserted into the oral cavity, and a connection part; a cell regeneration lamp provided inside the mouthpiece; and a plurality of coupling modules which are coupled to the respective ends of the mouthpiece, wherein the cell regeneration lamp can output near-infrared rays, can be used by all patients of various oral cavity sizes, and can treat stomatitis occurring not only on the gums but also the palate, the membrane lining the cheek, etc.

Abstract: Disclosed is a corner module apparatus for a vehicle.

Abstract: Disclosed is a corner module apparatus for a vehicle. The corner module includes a drive power generator configured to provide drive power to a wheel, a suspension connected to the drive power generator, and including a first arm and a second arm spaced a distance apart from each other, a steering system configured to support the suspension, to be rotated relatively to a vehicle body, and to adjust a steering angle of the wheel, and a camber adjuster configured to move the first arm or the second art to adjust a camber angle of the wheel.

Abstract: A three-dimensional semiconductor memory device is provided. The device may include a first stack structure on a substrate including a cell array region and a connection region, a second stack structure on the first stack structure, a first vertical channel hole penetrating the first stack structure and partially exposing the substrate and a bottom surface of the second stack structure, on the cell array region, a second vertical channel hole penetrating the second stack structure and exposing the first vertical channel hole, on the cell array region, a bottom diameter of the second vertical channel hole being smaller than an top diameter of the first vertical channel hole, and a buffer pattern placed in the first vertical channel hole and adjacent to the bottom surface of the second stack structure.

Abstract: A three-dimensional semiconductor memory device is provided. The device may include a first stack structure on a substrate including a cell array region and a connection region, a second stack structure on the first stack structure, a first vertical channel hole penetrating the first stack structure and partially exposing the substrate and a bottom surface of the second stack structure, on the cell array region, a second vertical channel hole penetrating the second stack structure and exposing the first vertical channel hole, on the cell array region, a bottom diameter of the second vertical channel hole being smaller than an top diameter of the first vertical channel hole, and a buffer pattern placed in the first vertical channel hole and adjacent to the bottom surface of the second stack structure.

Abstract: Provided is a method for preventing and alleviating inflammatory bowel disease by administering a composition including puer tea extract as an active ingredient to a subject in need thereof. Puer tea extract of the present disclosure showed an effect of improving damaged colonic tissue in a mouse model of acute ulcerative colitis induced by dextran sulfate sodium (DSS), and showed an inhibitory effect on clinical symptoms of the disease activity index (DAT) of weight loss, diarrhea, and rectal bleeding. In addition, puer tea extract inhibited the expression of inflammatory cytokines TNF-? and IL-6 in the colonic tissue and inhibited the inflammatory response through inhibition of the activity of NF-?B, an anti-inflammatory mechanism. In addition, the DPPH free radical and ABTS free radical scavenging ability increased proportionally as the concentration of puer tea extract increased at the cellular level, and COX-2 expression was inhibited in LPS-activated macrophages.

Abstract: A portable slit lamp device which can be coupled to an image capture device such as a smartphone.

Abstract: A mouthpiece-type orthodontic device using ultrasonic vibration, in which: an ultrasonic vibrator is installed inside a mouthpiece, and ultrasonic waves emitted from the ultrasonic vibrator affect the movement of teeth requiring correction, thereby making it possible to shorten the correction time is proposed. A vibration attenuator is attached to the outside of the mouthpiece contacting the teeth that do not need to be moved, and thus the ultrasonic vibration can be selectively transmitted only to the teeth requiring correction. Further, a plurality of grooves are formed on the outside of the mouthpiece, and the vibration attenuator can be mounted thereto, thus making it possible to selectively transmit the ultrasonic vibrations only to the teeth requiring correction.

Abstract: A stomatitis treatment device which is equipped with a light emitting means inside a housing to enable inflammations on the roof of the mouth and the upper side of the tongue to be treated, and to which a coupling module is attached to allow inflammations occurring on the lower side of the bottom of the mouth, etc. to be treated, is proposed. The stomatitis treatment device allows the roof of the mouth, the tongue, and the bottom of the mouth to be simultaneously irradiated with light for treatment by attaching and detaching the coupling module to and from the housing having the cell regeneration lamp therein, and thus can be used by patients having severe stomatitis with multiple lesions.

Abstract: The safety tripod includes a tripod, a flight driving machine mounted on the tripod to enable the tripod to fly, a landing base for seating the tripod on the ground when the tripod lands, and a standing guide mounted on the tripod to enable the tripod to stand up.

Abstract: A three-dimensional semiconductor memory device is provided. The device may include a first stack structure on a substrate including a cell array region and a connection region, a second stack structure on the first stack structure, a first vertical channel hole penetrating the first stack structure and partially exposing the substrate and a bottom surface of the second stack structure, on the cell array region, a second vertical channel hole penetrating the second stack structure and exposing the first vertical channel hole, on the cell array region, a bottom diameter of the second vertical channel hole being smaller than an top diameter of the first vertical channel hole, and a buffer pattern placed in the first vertical channel hole and adjacent to the bottom surface of the second stack structure.

Abstract: A three-dimensional semiconductor memory device is provided. The device may include a first stack structure on a substrate including a cell array region and a connection region, a second stack structure on the first stack structure, a first vertical channel hole penetrating the first stack structure and partially exposing the substrate and a bottom surface of the second stack structure, on the cell array region, a second vertical channel hole penetrating the second stack structure and exposing the first vertical channel hole, on the cell array region, a bottom diameter of the second vertical channel hole being smaller than an top diameter of the first vertical channel hole, and a buffer pattern placed in the first vertical channel hole and adjacent to the bottom surface of the second stack structure.

Abstract: An integrated circuit memory device includes a vertical stack structure containing an interlayer insulating layer and a gate electrode, on a substrate. A blocking dielectric region is provided on a sidewall of an opening in the stack structure. A lateral impurity region is provided, which extends between the blocking dielectric region and the interlayer insulating layer and between the blocking dielectric region and the gate electrode. A lower impurity region is also provided, which extends between the blocking dielectric region and the substrate.

Abstract: A three-dimensional semiconductor memory device is provided. The device may include a first stack structure on a substrate including a cell array region and a connection region, a second stack structure on the first stack structure, a first vertical channel hole penetrating the first stack structure and partially exposing the substrate and a bottom surface of the second stack structure, on the cell array region, a second vertical channel hole penetrating the second stack structure and exposing the first vertical channel hole, on the cell array region, a bottom diameter of the second vertical channel hole being smaller than an top diameter of the first vertical channel hole, and a buffer pattern placed in the first vertical channel hole and adjacent to the bottom surface of the second stack structure.

Abstract: An integrated circuit memory device includes a vertical stack structure containing an interlayer insulating layer and a gate electrode, on a substrate. A blocking dielectric region is provided on a sidewall of an opening in the stack structure. A lateral impurity region is provided, which extends between the blocking dielectric region and the interlayer insulating layer and between the blocking dielectric region and the gate electrode. A lower impurity region is also provided, which extends between the blocking dielectric region and the substrate.

Abstract: An integrated circuit memory device includes a vertical stack structure containing an interlayer insulating layer and a gate electrode, on a substrate. A blocking dielectric region is provided on a sidewall of an opening in the stack structure. A lateral impurity region is provided, which extends between the blocking dielectric region and the interlayer insulating layer and between the blocking dielectric region and the gate electrode. A lower impurity region is also provided, which extends between the blocking dielectric region and the substrate.

Abstract: A DTV transmitter includes a pre-processor pre-processing enhanced data, a data formatter generating enhanced data packets including known data, a multiplexer multiplexing the enhanced data packets with main data packets, a data randomizer randomizing the multiplexed data packets, an RS encoder RS-encoding the randomized data packets, and a data interleaver interleaving the RS-coded data packets, where a plurality of known data sequences are included in the interleaved enhanced data packets. Finally, the DTV transmitter further includes an enhanced encoder which codes each block of enhanced data placed between any two of the known data sequences and bypasses the interleaved main data packets.