Abstract: An integrated circuit memory device includes a vertical stack structure containing an interlayer insulating layer and a gate electrode, on a substrate. A blocking dielectric region is provided on a sidewall of an opening in the stack structure. A lateral impurity region is provided, which extends between the blocking dielectric region and the interlayer insulating layer and between the blocking dielectric region and the gate electrode. A lower impurity region is also provided, which extends between the blocking dielectric region and the substrate.

Abstract: The safety tripod includes a tripod, a flight driving machine mounted on the tripod to enable the tripod to fly, a landing base for seating the tripod on the ground when the tripod lands, and a standing guide mounted on the tripod to enable the tripod to stand up.

Abstract: An integrated circuit memory device includes a vertical stack structure containing an interlayer insulating layer and a gate electrode, on a substrate. A blocking dielectric region is provided on a sidewall of an opening in the stack structure. A lateral impurity region is provided, which extends between the blocking dielectric region and the interlayer insulating layer and between the blocking dielectric region and the gate electrode. A lower impurity region is also provided, which extends between the blocking dielectric region and the substrate.

Abstract: According to example embodiments, a method of fabricating a semiconductor device includes alternately stacking interlayer insulating layers and intermediate layers on a substrate, forming openings passing through the interlayer insulating layers and the intermediate layers to form recessed regions in the substrate, forming first epitaxial layers on recessed surfaces in the recessed regions, and forming second epitaxial layers using the first epitaxial layers as seed layers. The second epitaxial layers fill the recessed regions and extend above the substrate.

Abstract: In a method of fabricating a semiconductor device, sacrificial layer patterns are formed by leaving portions of sacrificial layers, instead of completely removing the sacrificial layers. Thus, the reliability of the semiconductor device may be increased, and the process of manufacturing the same may be simplified.

Abstract: A control device for a vehicle camera may include: a wiper relay connected to a multi-function switch to operate a vehicle wiper at a predetermined cycle; a camera controller connected to the wiper relay, and synchronizing the operation cycle of the wiper with an imaging cycle of the vehicle camera such that the vehicle camera images the front of the vehicle according to the operation period of the wiper; and an image filter connected to the camera controller, estimating the position of the wiper from edge information of the images taken by the camera, and searching and removing the wiper in the taken images.

Abstract: A nonvolatile memory device includes an insulating pattern extending in a first direction, a conductive pattern on the insulating pattern, and an electrode structure extending in the first direction. The electrode structure is adjacent the insulating pattern and conductive pattern, and includes an alternating pattern of gate electrodes and interlayer insulating films. A protection film adjacent a side surface of the electrode structure has a shorter length in the first direction than a length of the electrode structure.

Abstract: According to example embodiments, a method of fabricating a semiconductor device includes alternately stacking interlayer insulating layers and intermediate layers on a substrate, forming openings passing through the interlayer insulating layers and the intermediate layers to form recessed regions in the substrate, forming first epitaxial layers on recessed surfaces in the recessed regions, and forming second epitaxial layers using the first epitaxial layers as seed layers. The second epitaxial layers fill the recessed regions and extend above the substrate.

Abstract: A control device for a vehicle camera may include: a wiper relay connected to a multi-function switch to operate a vehicle wiper at a predetermined cycle; a camera controller connected to the wiper relay, and synchronizing the operation cycle of the wiper with an imaging cycle of the vehicle camera such that the vehicle camera images the front of the vehicle according to the operation period of the wiper; and an image filter connected to the camera controller, estimating the position of the wiper from edge information of the images taken by the camera, and searching and removing the wiper in the taken images.

Abstract: Provided is a jelly-roll type electrode assembly pattern-coated with active materials manufactured by winding and compressing a separator and an anode and a cathode arranged on both sides of the separator. The anode includes anode flat coated portion coated with an anode active material and anode curved uncoated portion not coated with the anode active material, which are alternately formed. The cathode includes a cathode flat coated portion coated with a cathode active material and a cathode curved uncoated portion not coated with the cathode active material, which are alternately formed.

Abstract: In a method of fabricating a semiconductor device, sacrificial layer patterns are formed by leaving portions of sacrificial layers, instead of completely removing the sacrificial layers. Thus, the reliability of the semiconductor device may be increased, and the process of manufacturing the same may be simplified.

Abstract: Disclosed herein is a method of locating a plurality of full cells constructed in a cathode/separator/anode structure, as basic units, on a separator sheet having a continuous length, further locating a unit electrode or a bi-cell on the separator sheet, and winding the full cells and unit electrode or the bi-cell to continuously manufacture a stacking/folding type electrode assembly constructed in a structure in which anodes are located at the outermost electrodes forming the outside of the electrode assembly, respectively, wherein the method including a step of continuously supplying a cathode sheet, an anode sheet, a first separator sheet, and a second separator sheet, to manufacture the unit cells, successively arranging the unit cells on the second separator sheet from a first stage to an nth stage, and winding the unit cells, a step of arranging cathode tabs and anode tabs at the respective stages, while the cathode tabs and the anode tabs are opposite to each other, and arranging electrode tabs having

Abstract: A nonvolatile memory device includes an insulating pattern extending in a first direction, a conductive pattern on the insulating pattern, and an electrode structure extending in the first direction. The electrode structure is adjacent the insulating pattern and conductive pattern, and includes an alternating pattern of gate electrodes and interlayer insulating films. A protection film adjacent a side surface of the electrode structure has a shorter length in the first direction than a length of the electrode structure.

Abstract: A method of driving a plasma display is disclosed. In one embodiment, the method includes dividing one screen into a plurality of areas, wherein each area corresponds to at least one of the plurality of discharge cells, and wherein the plurality of areas form a detection pattern. The method also includes displaying the detection pattern in the plasma display and receiving a detection image which has been previously detected or captured, wherein detection image corresponds to at least one of the plurality of areas. The method further includes comparing the received detection image with the detection pattern and determining a position of the detected or captured area based on the comparison.

Abstract: An enhanced VSB receiver includes a tuner which tunes an RF signal and converts it into an IF signal, an IF mixer which converts the IF signal into a baseband signal, and a demodulator which demodulates the baseband signal into a VSB signal. The enhanced VSB receiver further includes a map recovery unit which recovers VSB map information of the VSB signal, an enhanced equalizer for compensating channel distortion of the VSB signal and outputting an equalized symbol, and an enhanced Viterbi decoder for estimating whether polarity inversion occurred during a symbol period of the equalized symbol and Viterbi-decoding the equalized symbol based on the polarity estimation.

Abstract: A DTV transmitter includes a pre-processor pre-processing enhanced data, a data formatter generating enhanced data packets including known data, a multiplexer multiplexing the enhanced data packets with main data packets, a data randomizer randomizing the multiplexed data packets, an RS encoder RS-encoding the randomized data packets, and a data interleaver interleaving the RS-coded data packets, where a plurality of known data sequences are included in the interleaved enhanced data packets. Finally, the DTV transmitter further includes an enhanced encoder which codes each block of enhanced data placed between any two of the known data sequences and bypasses the interleaved main data packets.

Abstract: An enhanced VSB receiver includes a tuner which tunes an RF signal and converts it into an IF signal, an IF mixer which converts the IF signal into a baseband signal, and a demodulator which demodulates the baseband signal into a VSB signal. The enhanced VSB receiver further includes a map recovery unit which recovers VSB map information of the VSB signal, an enhanced equalizer for compensating channel distortion of the VSB signal and outputting an equalized symbol, and an enhanced Viterbi decoder for estimating whether polarity inversion occurred during a symbol period of the equalized symbol and Viterbi-decoding the equalized symbol based on the polarity estimation.

Abstract: A DTV transmitter includes a pre-processor pre-processing enhanced data, a data formatter generating enhanced data packets including known data, a multiplexer multiplexing the enhanced data packets with main data packets, a data randomizer randomizing the multiplexed data packets, an RS encoder RS-encoding the randomized data packets, and a data interleaver interleaving the RS-coded data packets, where a plurality of known data sequences are included in the interleaved enhanced data packets. Finally, the DTV transmitter further includes an enhanced encoder which codes each block of enhanced data placed between any two of the known data sequences and bypasses the interleaved main data packets.

Abstract: An enhanced VSB receiver includes a tuner which tunes an RF signal and converts it into an IF signal, an IF mixer which converts the IF signal into a baseband signal, and a demodulator which demodulates the baseband signal into a VSB signal. The enhanced VSB receiver further includes a map recovery unit which recovers VSB map information of the VSB signal, an enhanced equalizer for compensating channel distortion of the VSB signal and outputting an equalized symbol, and an enhanced Viterbi decoder for estimating whether polarity inversion occurred during a symbol period of the equalized symbol and Viterbi-decoding the equalized symbol based on the polarity estimation.

Abstract: A DTV transmitter includes a pre-processor pre-processing enhanced data, a data formatter generating enhanced data packets including known data, a multiplexer multiplexing the enhanced data packets with main data packets, a data randomizer randomizing the multiplexed data packets, an RS encoder RS-encoding the randomized data packets, and a data interleaver interleaving the RS-coded data packets, where a plurality of known data sequences are included in the interleaved enhanced data packets. Finally, the DTV transmitter further includes an enhanced encoder which codes each block of enhanced data placed between any two of the known data sequences and bypasses the interleaved main data packets.