Abstract: The present disclosure discloses a feedback field-effect array device capable of converting between volatile and non-volatile operations and an array circuit using the same. According to one embodiment of the present disclosure, the array circuit may include a plurality of feedback field-effect array devices, wherein the source region of the feedback field-effect electronic device and the drain region of an access electronic device may be connected to each other in series, the feedback field-effect electronic device may be connected to a bit line and a first word line, the access electronic device may be connected to a source line and a second word line, and any one of first and second gate voltages may be applied to the first word line to store data in a first logic state or data in a second logic state.

Abstract: The present disclosure discloses a transposable feedback field-effect electronic device and an array circuit using the feedback field-effect electronic device. According to one embodiment of the present disclosure, the feedback field-effect electronic device may include a diode structure, a plurality of gate electrodes, and a plurality of access electronic devices, wherein, when the diode structure receives voltage through a first gate electrode of the gate electrodes and a first access electronic device of the access electronic devices, first direction access may be performed, and when the diode structure receives voltage through a second gate electrode of the gate electrodes and a second access electronic device of the access electronic devices, second direction access may be performed.

Abstract: The present invention provides a thermoelectric micro-supercapacitor integrated device comprising: a thermoelectric power generation module comprising a thermoelectric unit body including a thermoelectric channel interposed between two different heat sources and disposed on a substrate, the thermoelectric channel being composed of an n-type or p-type semiconductor; and a micro-supercapacitor module configured to be operated in cooperation with the thermoelectric power generation module and including a pair of collector electrodes between which an electric potential difference is generated through the thermoelectric channel.

Abstract: The present invention provides a thermoelectric generator module including a set of module unit bodies disposed between a hot source and a cold source to serve as fundamental structures for performing thermoelectric power generation and a method of manufacturing the thermoelectric generator module. Each of the module unit bodies comprises: a first electrodes disposed at one of the hot source and the cold source; a second electrode disposed at the other of the hot source and the cold source so as to be spaced apart from the first electrodes; a first nanowire configured to interconnect the first electrode and the second electrode and composed of an n-type or p-type semiconductor; and a second nanowire.

Abstract: The present invention provides a method of manufacturing a nanofiber-based thermoelectric generator module, the method comprising: an electrode formation step of forming a plurality of electrodes and a plurality of second electrodes so as to be spaced apart from and opposite to each other in an alternately staggered arrangement relative to each other; a first nanofiber arrangement step of arranging a first nonofiber including an n-type or p-type semiconductor; and a second nanofiber arrangement step of arranging a second nonofiber including a semiconductor of a type different from the type of the semiconductor forming the first nanofiber, a nanofiber-based thermoelectric generator module manufactured by the method, and an electrospinning apparatus of manufacturing nanofibers for the nanofiber-based thermoelectric generator module.

Abstract: The present invention provides a thermoelectric generator module including one or more module unit bodies disposed between a hot source and a cold source to serve as fundamental structures for performing thermoelectric power generation, wherein the module unit bodies are disposed on a exhaust pipe interposed between the hot source and the cold source, and provides a method of manufacturing the thermoelectric generator module.

Abstract: The present invention provides a thermoelectric generator module including a set of module unit bodies disposed between a hot source and a cold source to serve as fundamental structures for performing thermoelectric power generation and a method of manufacturing the thermoelectric generator module. Each of the module unit bodies comprises: a first electrodes disposed at one of the hot source and the cold source; a second electrode disposed at the other of the hot source and the cold source so as to be spaced apart from the first electrodes; a first nanowire configured to interconnect the first electrode and the second electrode and composed of an n-type or p-type semiconductor; and a second nanowire.

Abstract: The present invention provides a method of manufacturing a nanofiber-based thermoelectric generator module, the method comprising: an electrode formation step of forming a plurality of electrodes and a plurality of second electrodes so as to be spaced apart from and opposite to each other in an alternately staggered arrangement relative to each other; a first nanofiber arrangement step of arranging a first nonofiber including an n-type or p-type semiconductor; and a second nanofiber arrangement step of arranging a second nonofiber including a semiconductor of a type different from the type of the semiconductor forming the first nanofiber, a nanofiber-based thermoelectric generator module manufactured by the method, and an electrospinning apparatus of manufacturing nanofibers for the nanofiber-based thermoelectric generator module.

Abstract: The present invention relates to a method of manufacturing thin-film transistors using nanoparticles and thin film transistors manufactured by the method. A hydrophilic buffer layers are deposited on the substrates to facilitate formation of nanoparticle films. Sintered nanoparticles are used as an active layer and dielectric materials of high dielectric coefficient are also used as a gate dielectric layer to form a top gate electrode on the gate dielectric layer, thereby enabling low-voltage operation and low-temperature fabrication.

Abstract: The present invention relates to a method of manufacturing thin-film transistors using nanoparticles and thin film transistors manufactured by the method. A hydrophilic buffer layers are deposited on the substrates to facilitate formation of nanoparticle films. Sintered nanoparticles are used as an active layer and dielectric materials of high dielectric coefficient are also used as a gate dielectric layer to form a top gate electrode on the gate dielectric layer, thereby enabling low-voltage operation and low-temperature fabrication.

Abstract: A light receiving element, in which nanoparticles obtained by a colloidal synthesis are interconnected so as to serve as a channel for electrons excited by light received by the nanoparticles, thereby improving the performance of the light receiving element and simplifying a process for manufacturing the light receiving element.

Abstract: A light receiving element, in which nanoparticles obtained by a colloidal synthesis are interconnected so as to serve as a channel for electrons excited by light received by the nanoparticles, thereby improving the performance of the light receiving element and simplifying a process for manufacturing the light receiving element.