Abstract: A method of forming fine patterns of semiconductor devices is disclosed. The method comprises forming a hard mask layer on an etch target, which includes first and second regions. The hard mask layer may further have first and second preliminary mask patterns formed on the same. Furthermore, a spacer layer may be formed on the first and second preliminary mask patterns. The spacer layer and the first and second preliminary mask patterns may be partially removed to form first and second spacers on sidewalls of the first and second preliminary mask patterns, respectively. The second spacer in the second region may have a top surface higher than a top surface of the first spacer in the first region. The height differences between the spacers allow forming of first and second patterns in the first and second regions, and thereby forming fine patterns of semiconductor devices.

Abstract: Disclosed herein is a method for preventing a loss of trip data of a vehicle during a substantial instantaneous voltage drop in a vehicle cluster. In the method, the trip data calculated by a processor of a trip computer are stored in a clear region of a memory and the trip data stored in the clear region are backed up in a nonvolatile region of the memory when new trip data is generated. The processor collects the trip data backed up in the nonvolatile region to rewrite the trip data in the clear region after a substantially instantaneous voltage drop occurs.

Abstract: Provided are a three-phase coaxial superconducting power cable and a structure thereof. A certain space is formed between adjacent superconducting wires of a superconducting layer (disposed at an outer portion) having more superconducting wires among a plurality of superconducting layers, and another wire is disposed in the space, or the superconducting wires of the respective superconducting layers are disposed to have different critical currents. Accordingly, a waste of superconducting wires is prevented, and the optimized three-phase coaxial superconducting power cable is provided.

Abstract: Provided are a three-phase coaxial superconducting power cable and a structure thereof. A certain space is formed between adjacent superconducting wires of a superconducting layer (disposed at an outer portion) having more superconducting wires among a plurality of superconducting layers, and another wire is disposed in the space, or the superconducting wires of the respective superconducting layers are disposed to have different critical currents. Accordingly, a waste of superconducting wires is prevented, and the optimized three-phase coaxial superconducting power cable is provided.

Abstract: This invention relates to a soap stand, comprising a bottom portion, a skirt extending upwardly around the circumference of the bottom portion and defining an opening, and a tubular shaft which is fluted and annular, extending upwardly from the circumferential rim of the skirt. The bottom portion is preferably circular and so are the skirt and the tubular shaft. The tubular shaft extends radially and outwardly from the skirt as well as upwardly. Besides, the tubular shaft further comprises a plurality of ridges, with each adjacent pair of said ridges defining a depression therebetween. In addition, the soap stand further comprises a soap stop disposed in the opening and fixed to the bottom portion. The soap stop is preferably cylindrical and its top portion is flat.

Abstract: A method for determining glucose concentration in tear fluid includes providing a blood glucose test strip having glucose dehydrogenase as an active enzyme provided therein, receiving a tear fluid sample via fluid communication of the blood glucose test strip with an eye region of a subject, and processing the tear fluid sample to determine a tear glucose concentration. The method may further include correlating the determined tear glucose concentration with a blood glucose concentration.

Abstract: A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug.

Abstract: Disclosed herein is a method for preventing a loss of trip data of a vehicle during a substantial instantaneous voltage drop in a vehicle cluster. In the method, the trip data calculated by a processor of a trip computer are stored in a clear region of a memory and the trip data stored in the clear region are backed up in a nonvolatile region of the memory when new trip data is generated. The processor collects the trip data backed up in the nonvolatile region to rewrite the trip data in the clear region after a substantially instantaneous voltage drop occurs.

Abstract: A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug.

Abstract: A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug.

Abstract: Methods of forming pattern structures and methods of manufacturing memory devices using the same are provided, the methods of forming pattern structures include forming an etching object layer on a substrate and performing a plasma reactive etching process on the etching object layer using an etching gas including at least ammonia (NH3) gas. The etching object layer includes a magnetic material or a phase change material.

Abstract: A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug.

Abstract: Methods of forming pattern structures and methods of manufacturing memory devices using the same are provided, the methods of forming pattern structures include forming an etching object layer on a substrate and performing a plasma reactive etching process on the etching object layer using an etching gas including at least ammonia (NH3) gas. The etching object layer includes a magnetic material or a phase change material.