Abstract: Disclosed is a method for fabricating a piezoelectric/electrostrictive thick film, using photolithography. On a vibrating plate is formed a bottom electrode. Over the bottom electrode, a photoresist is coated, exposed to light and developed to form molds in fine patterns. Separately, a ceramic paste is prepared by mixing a ceramic oxide powder and a ceramic sol solution. The ceramic oxide powder has a particle size of 5 &mgr;m or less and is prepared from Pb and Ti-based ceramic oxide powder by a non-explosive oxidation-reduction combustion reaction at 100-500° C. while the ceramic sol solution, identical or similar in composition to the ceramic oxide powder, uses water or an organic solvent as an base. Next, the ceramic paste is filled in the molds to form a piezoelectric/electrostrictive film, followed by conducting a thermal treatment at 100 to 300° C. to sinter the film. Finally, a top electrode is formed on the film.

Abstract: A semiconductor memory device is provided that is capable of operating normally and having its operating speed unaffected, even when column address lines for transmitting column addresses are greatly loaded and even when the loads on the column address lines are simultaneously different from one another. The semiconductor memory device includes a column selection line driver for receiving decoded addresses and driving column selection lines of a memory cell array in response to a column selection line control signal, a column selection line control signal generator for receiving buffered column address data, and for generating the column selection line control signal in response to an internal clock signal and one of a first control signal and a second control signal, and a control signal generator for generating the first and second control signals in response to the internal clock signal, an externally-input column address strobe signal, and an externally-input write enable signal.