Patents by Inventor Kyoung Wan Kim

Kyoung Wan Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10937935
    Abstract: A light emitting diode chip includes: a first conductivity type semiconductor layer; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode being in ohmic contact with the second conductivity type semiconductor layer; a first current spreader being in ohmic contact with the first conductivity type semiconductor layer; a second current spreader electrically connected to the transparent electrode; an insulation layer covering the mesa, the first current spreader and the second current spreader, and including a distributed Bragg reflector. A lateral distance between the first current spreader and the mesa is larger than a thickness of the insulation layer, and a first side surface of the first current spreader close to the mesa is longer than the second side surface thereof.
    Type: Grant
    Filed: June 26, 2019
    Date of Patent: March 2, 2021
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong Lee, Kyoung Wan Kim, Keum Ju Lee
  • Patent number: 10937925
    Abstract: A light emitting diode chip including a light emitting structure and a distributed Bragg reflector (DBR) disposed thereon to reflect light, the DBR includes alternatively stacked first material layers having a low refractive index and second material layers having a high refractive index, and, with respect to a peak wavelength ? of light emitted, the DBR includes a first region having pairs of the first and second material layers each having an optical thickness greater than 0.25? and less than 0.3?, a last pair of the first and second material layers disposed farthest from the light emitting structure, and a second region between the first region and the last pair, each of the material layers in the second region has an optical thickness less than 0.25?, and the first material layers have a greater optical thickness deviation than that of the second material layers in the second region.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: March 2, 2021
    Inventors: Ye Seul Kim, Kyoung Wan Kim
  • Patent number: 10915080
    Abstract: Disclosed are a communication method between a master controller and slave controllers, a slave controller for the communication method, and a battery management system using the communication method and the slave controller, in which the master controller receives safety information about battery cells through a plurality of channels even when each of a plurality of slave controllers includes only one micro controller unit, thereby minimizing the increase in the cost and enhancing the safety of the battery management system. The communication method includes performing bidirectional communication between a master controller and first to Nth (where N is an integer equal to or more than two) slave controllers through a first communication channel, and receiving, by the master controller, an indication signal through a second communication signal via the first to Nth slave controllers.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: February 9, 2021
    Assignees: SILICON WORKS CO., LTD., LG CHEM, LTD.
    Inventors: Myoung Su Song, Jae Wan Kim, Jin Yong Jeon, Ki Suk Cho, Il Kwon Kim, Seung Jun Choi, Kyu Ho Kim, Kyoung Choon Min, Ki Young Lee, Won Gon Kim
  • Publication number: 20210009710
    Abstract: The present invention relates to a pharmaceutical composition for preventing or treating cancer, comprising an LRIT2 inhibitor as an active ingredient. The LRIT2 inhibitor according to the present invention can increase the activity of immune cells, and thus can be used as an immune enhancer. Also, the LRIT2 inhibitor according to the present invention can effectively prevent or treat cancer by enhancing the immunity of an individual.
    Type: Application
    Filed: May 15, 2019
    Publication date: January 14, 2021
    Applicant: GENOME AND COMPANY
    Inventors: Kyoung Wan YOON, Youn Kyung HOUH, Bu-Nam JEON, Jinyoung SOHN, Yun Yeon KIM, Suro LEE, Joo-Yeon CHUNG, Areum JEONG
  • Publication number: 20210005787
    Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).
    Type: Application
    Filed: September 18, 2020
    Publication date: January 7, 2021
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong LEE, Kyoung Wan KIM, Tae Jun PARK, Sang Won WOO
  • Publication number: 20200411725
    Abstract: A light emitting diode chip including a light emitting structure and a distributed Bragg reflector (DBR) having first, second, and third regions and including first material layers having a low index of refraction and second material layers having a high index of refraction, in which the first material layers include a first group having an optical thickness greater than 0.25?+10%, a second group having an optical thickness in a range of 0.25??10% to 0.25?+10%, and a third group having an optical thickness less than 0.25??10%, the first region has alternately disposed first and second groups, the second region has the third group, the first material layers in the third region have a first material layer having an optical thickness less than 0.25? and greater than 0.25?, the second material layers have a smaller average optical thickness than the first group of the first material layers.
    Type: Application
    Filed: September 10, 2020
    Publication date: December 31, 2020
    Inventors: Ye Seul KIM, Sang Won Woo, Kyoung Wan KIM
  • Publication number: 20200373573
    Abstract: A positive electrode active material precursor having a uniform particle size distribution and represented by Formula 1, wherein a percentage of fine powder with an average particle diameter (D50) of 1 ?m or less is generated when the positive electrode active material precursor is rolled at 2.5 kgf/cm2 is less than 1%, and an aspect ratio is 0.93 or more, and a method of preparing the positive electrode active material precursor [NixCoyM1zM2w](OH)2??[Formula 1] in Formula 1, 0.5?x<1, 0<y?0.5, 0<z?0.5, and 0?w?0.1, M1 includes at least one selected from the group consisting of Mn and Al, and M2 includes at least one selected from the group consisting of Zr, B, W, Mo, Cr, Nb, Mg, Hf, Ta, La, Ti, Sr, Ba, Ce, F, P, S, and Y. A method of preparing the positive electrode active material precursor is also provided.
    Type: Application
    Filed: December 7, 2018
    Publication date: November 26, 2020
    Applicant: LG Chem, Ltd.
    Inventors: Seong Bae Kim, Yi Rang Lim, Kyoung Wan Park, Hyun Uk Kim, Hong Kyu Park, Chang Jun Moon, Eun Hee Kim
  • Patent number: 10840409
    Abstract: A light emitting diode includes a current blocking layer interposed between a first connection pad and a first conductivity type semiconductor layer to improve efficiency in spreading of electric current supplied to the first conductivity type semiconductor layer.
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: November 17, 2020
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ji Hye Kim, Kyoung Wan Kim, Ye Seul Kim
  • Publication number: 20200356398
    Abstract: An information processing device for performing performance control in a virtualized environment is disclosed. The information processing device can include an I/O thread configured to transfer signals between a virtual machine and at least one physical resource, and a performance manager unit configured to compare a target performance for the virtual machine with an actual performance of the virtual machine and manage a resource allocated to the I/O thread based on the comparison result, where the performance manager unit may obtain information regarding the actual performance of the virtual machine, determine a performance adjustment value by using the difference between the actual performance of the virtual machine and the target performance for the virtual machine, and manage the resource allocated to the I/O thread based on the performance adjustment value.
    Type: Application
    Filed: October 11, 2019
    Publication date: November 12, 2020
    Applicant: Korea University Research and Business Foundation
    Inventors: Hyuck YOO, Kyoung Woon LEE, Soo-Wan KIM
  • Publication number: 20200345599
    Abstract: The present invention relates to a composition for surface modification. The composition for surface modification according to the present invention contains a particular carbodiimide-based compound, thus forms a covalent bond without damaging skin, hair, or fabric, and semipermanently provides desired skin or hair surface modification effects or fabric care effects.
    Type: Application
    Filed: June 23, 2020
    Publication date: November 5, 2020
    Applicant: LG Household & Health Care Ltd.
    Inventors: Seong Kil Son, Kyoung Ran Park, Dong Wan Kim, Kyung Hwan Kim, Ji Hee Yoo, Young Hyun Kim, Jeong Rae Lee, Sang Min Lee
  • Patent number: 10804437
    Abstract: A light emitting diode chip including a light emitting structure having an active layer, and a distributed Bragg reflector (DBR) disposed to reflect light emitted therefrom. The DBR has first and second regions, and a third region therebetween. The first region is closer to the light emitting structure than the second and third regions. The DBR includes first material layers having a high index of refraction and second material layers having a low index of refraction alternately disposed one over another. The first material layers include first, second, and third groups having an optical thickness greater than 0.25?+10%, in a range of 0.25??10% to 0.25?+10%, and less than 0.25??10%, respectively. With respect to a central wavelength (?: 554 nm) of the visible range, the first region has the first and second groups, the second region has the third group, and the third region has the second and third groups.
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: October 13, 2020
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Ye Seul Kim, Sang Won Woo, Kyoung Wan Kim
  • Patent number: 10799436
    Abstract: The present invention relates to a composition for surface modification. The composition for surface modification according to the present invention contains a particular carbodiimide-based compound, thus forms a covalent bond without damaging skin, hair, or fabric, and semipermanently provides desired skin or hair surface modification effects or fabric care effects.
    Type: Grant
    Filed: August 26, 2016
    Date of Patent: October 13, 2020
    Assignee: LG Household & Health Care Ltd.
    Inventors: Seong Kil Son, Kyoung Ran Park, Dong Wan Kim, Kyung Hwan Kim, Ji Hee Yoo, Young Hyun Kim, Jeong Rae Lee, Sang Min Lee
  • Patent number: 10734554
    Abstract: A light emitting diode including a light emitting structure including an active layer, a first distributed Bragg reflector (DBR) disposed on one side of the light emitting structure to reflect light emitted from the light emitting structure, and an interfacial layer disposed between the light emitting structure and the first DBR, in which the first DBR includes first material layers having a low refractive index and second material layers having a high refractive index alternately stacked one above another, the interfacial layer has a lower refractive index than the first material layers, and has a thickness greater than a thickness of each of the first and second material layers, and one a second material layer of the second material layers that is closest to the interfacial layer includes a first sub-layer and a second sub-layer, the first sub-layer having a density lower than that of the second sub-layer.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: August 4, 2020
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Min Chan Heo, Kyoung Wan Kim, Ye Seul Kim, Yong Woo Ryu
  • Patent number: 10710048
    Abstract: A co-precipitation reactor with a continuous filtering system mounted, wherein the co-precipitation reactor includes a main body accommodating a reactant for reaction therein, an input unit inputting the reactant into the main body, and a filter unit installed in the main body to filter a precursor of the precursor generated by reacting with the reactant in the main body and a reaction solution.
    Type: Grant
    Filed: December 26, 2018
    Date of Patent: July 14, 2020
    Assignee: LG Chem, Ltd.
    Inventors: Hyun Uk Kim, Seong Bae Kim, Chang Jun Moon, Yi Rang Lim, Kyoung Wan Park, Eun Hee Kim
  • Patent number: 10707382
    Abstract: A light-emitting element according to an embodiment of the present document has a transparent electrode having an opening, and the transparent electrode has a protrusion on a side surface of the opening. A second electrode pad is arranged on the opening of the transparent electrode, and abuts the protrusion. Accordingly, peeling of the second electrode pad can be prevented, thereby improving the reliability of the light-emitting element.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: July 7, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Ye Seul Kim, Kyoung Wan Kim, Sang Hyun Oh, Duk Il Suh, Sang Won Woo, Ji Hye Kim
  • Publication number: 20200212263
    Abstract: A light emitting diode including a light emitting structure including an active layer, a first distributed Bragg reflector (DBR) disposed on one side of the light emitting structure to reflect light emitted from the light emitting structure, and an interfacial layer disposed between the light emitting structure and the first DBR, in which the first DBR includes first material layers having a low refractive index and second material layers having a high refractive index alternately stacked one above another, the interfacial layer has a lower refractive index than the first material layers, and has a thickness greater than a thickness of each of the first and second material layers, and one a second material layer of the second material layers that is closest to the interfacial layer includes a first sub-layer and a second sub-layer, the first sub-layer having a density lower than that of the second sub-layer.
    Type: Application
    Filed: March 15, 2019
    Publication date: July 2, 2020
    Inventors: Min Chan HEO, Kyoung Wan Kim, Ye Seul Kim, Yong Woo Ryu
  • Patent number: 10701437
    Abstract: A method for processing a content by a set-top box according to an embodiment of the present disclosure comprises the steps of: receiving a content including an audio stream; and performing bypassing to output the audio stream to a television (TV) through an output interface without performing a decoding operation for the audio stream, wherein the audio stream includes metadata regarding the content.
    Type: Grant
    Filed: April 22, 2019
    Date of Patent: June 30, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun-Koo Yang, Kyung-Mo Park, Young-Wan So, Sang-Bae Chon, Hyun-Koo Kang, Sun-Min Kim, Jae-Yeon Song, Ji-Min Chung, Kyoung-Shin Jin
  • Patent number: 10685980
    Abstract: A three-dimensional semiconductor memory device includes: a base substrate; a gate stack structure disposed on the base substrate, and including gate electrodes stacked in a direction substantially perpendicular to a top surface of the base substrate; a penetration region penetrating through the gate stack structure and surrounded by the gate stack structure; and vertical channel structures passing through the gate stack structure. The lowermost gate electrodes among the gate electrodes are spaced apart from each other, and a portion of at least one of the lowermost gate electrodes has a shape bent toward the penetration region.
    Type: Grant
    Filed: February 6, 2019
    Date of Patent: June 16, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwang Soo Kim, Si Wan Kim, Jun Hyoung Kim, Kyoung Taek Oh, Bong Hyun Choi
  • Patent number: 10672951
    Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: June 2, 2020
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Duk Il Suh, Ye Seul Kim, Kyoung Wan Kim, Sang Won Woo, Ji Hye Kim
  • Publication number: 20200127167
    Abstract: A flip chip type light emitting diode chip is disclosed. The light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode; a contact electrode laterally spaced apart from the mesa; a current spreader electrically connected to the transparent electrode; a first insulating reflection layer covering the substrate; and a second insulating reflection layer disposed under the substrate, and including the distributed Bragg reflector.
    Type: Application
    Filed: August 23, 2019
    Publication date: April 23, 2020
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong LEE, Kyoung Wan KIM, Tae Jun PARK, Sang Won WOO