Patents by Inventor Kyoung Wan Kim
Kyoung Wan Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170108937Abstract: A light emitting diode chip used in devices includes: a substrate including protrusions disposed on an upper surface; a light emitting structure disposed on the substrate and including at least one hole through a second conductive type semiconductor layer and an active layer and partially exposing a first conductive type semiconductor layer; a contact electrode including an optically transparent conductive oxide; a light reflective insulation layer including a distributed Bragg reflector; a first pad electrode electrically connected to the first conductive type semiconductor layer; and a second pad electrode electrically connected to the contact electrode, wherein a portion of an upper surface of the substrate is exposed around the light emitting structure, the light reflective insulation layer adjoins the exposed portion of the upper surface of the substrate around the light emitting structure, and an upper edge of the substrate is spaced from the light reflective insulation layer.Type: ApplicationFiled: September 29, 2016Publication date: April 20, 2017Inventors: Ye Seul KIM, Kyoung Wan KIM, Sang Won WOO, Ji Hye KIM
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Publication number: 20170108173Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; an insulation layer covering the first conductive type semiconductor layer and the mesa, the insulation layer including at least one first opening exposing the first conductive type semiconductor layer and a second opening disposed on the mesa; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening. The first opening of the insulation layer includes a first region covered by the first pad electrode and a second region exposed outside the first pad electrode.Type: ApplicationFiled: November 10, 2016Publication date: April 20, 2017Inventors: Ye Seul KIM, Kyoung Wan Kim, Snag Won Woo, Ji Hye Kim
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Publication number: 20170092821Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the arType: ApplicationFiled: December 13, 2016Publication date: March 30, 2017Inventors: Jong Hyeon Chae, Jong Min Jang, Won Young Roh, Dae Woong Suh, Min Woo Kang, Joon Sub Lee, Hyun A. Kim, Kyoung Wan Kim, Chang Yeon Kim
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Publication number: 20170077355Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.Type: ApplicationFiled: July 25, 2016Publication date: March 16, 2017Inventors: Jin Woong Lee, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim
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Publication number: 20170047483Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.Type: ApplicationFiled: October 27, 2016Publication date: February 16, 2017Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
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Publication number: 20170012173Abstract: A light-emitting diode includes a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad electrically connected to the second conductive type semiconductor layer, and an insulation layer disposed under the second electrode pad. The insulation layer overlaps the first conductive type semiconductor layer and the second conductive type semiconductor layer. The insulation layer is flush with an edge of the first conductive type semiconductor layer and the second electrode pad is spaced apart from the edge of the first conductive type semiconductor layer.Type: ApplicationFiled: September 22, 2016Publication date: January 12, 2017Inventors: Sum Geun LEE, Jin Cheol SHIN, Yeo Jin YOON, Kyoung Wan KIM, Jeong Hee YANG
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Publication number: 20170012176Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of die area of the opening region to the area of the masking region in the second region.Type: ApplicationFiled: September 20, 2016Publication date: January 12, 2017Inventors: Jong Hyeon Chae, Jong Min Jang, Won Young Roh, Dae Woong Suh, Min Woo Kang, Joon Sub Lee, Hyun A. Kim, Kyoung Wan Kim, Chang Yeon Kim
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Publication number: 20160380157Abstract: A light-emitting diode (LED) includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. The LED includes a first distributed Bragg reflector arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector including a first laminate structure including alternately stacked SiO2 and Nb2O5 layers. The first laminate structure of the first distributed Bragg reflector is configured to reflect at least 90% of a first wavelength range of blue light emitted from the light emitting structure.Type: ApplicationFiled: September 12, 2016Publication date: December 29, 2016Inventors: Duk Il SUH, Jae Moo Kim, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim, Sang Hyun Oh, Jin Woong Lee
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Patent number: 9520536Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.Type: GrantFiled: December 30, 2015Date of Patent: December 13, 2016Assignee: SEOUL VIOSYS CO., LTD.Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
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Publication number: 20160315226Abstract: A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.Type: ApplicationFiled: July 1, 2016Publication date: October 27, 2016Inventors: Won Cheol Seo, Dae Sung Cho, Kyung Hee Ye, Kyoung Wan Kim, Yeo Jin Yoon
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Patent number: 9461212Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.Type: GrantFiled: June 26, 2015Date of Patent: October 4, 2016Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jong Hyeon Chae, Jong Min Jang, Won Young Roh, Dae Woong Suh, Min Woo Kang, Joon Sub Lee, Hyun A Kim, Kyoung Wan Kim, Chang Yeon Kim
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Patent number: 9419180Abstract: A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.Type: GrantFiled: March 11, 2015Date of Patent: August 16, 2016Assignee: SEOUL VIOSYS CO., LTD.Inventors: Won Cheol Seo, Dae Sung Cho, Kyung Hee Ye, Kyoung Wan Kim, Yeo Jin Yoon
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Publication number: 20160218244Abstract: A light-emitting diode includes, a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting diode also includes a transparent conductive layer including a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer. The second transparent conductive layer has a conductivity different than the first transparent conductive layer.Type: ApplicationFiled: September 25, 2013Publication date: July 28, 2016Inventors: Chan Seob SHIN, Hyoung Jin LIM, Kyoung Wan KIM, Yeo Jin YOON, Jacob J. RICHARDSON, Daniel ESTRADA, Evan C. O'HARA, Haoran SHI
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Patent number: 9401456Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.Type: GrantFiled: June 15, 2015Date of Patent: July 26, 2016Assignee: SEOUL VIOSYS CO., LTD.Inventors: Jin Woong Lee, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim
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Patent number: 9397264Abstract: Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad located on the second conductive type semiconductor layer opposite to the second conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.Type: GrantFiled: February 24, 2015Date of Patent: July 19, 2016Assignee: SEOUL VIOSYS CO., LTD.Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
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Publication number: 20160118564Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.Type: ApplicationFiled: December 30, 2015Publication date: April 28, 2016Inventors: Ye Seul Kim, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh, Keum Ju Lee, Jin Woong Lee, Da Yeon Jeong, Sang Won Woo
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Publication number: 20160079474Abstract: This invention relates to a semiconductor light emitting device which has superior lateral light extraction efficiency, and to a method of manufacturing the same. The semiconductor light emitting device includes a sapphire substrate and a light emitting structure formed on an upper surface of the sapphire substrate and including a plurality of nitride epitaxial layers including an active layer which produces light, wherein at least one side surface of the light emitting structure is formed as an inclined surface which creates an acute angle relative to the upper surface of the sapphire substrate. In some embodiments, at least one modification region can be formed in a horizontal direction on at least one side surface of the sapphire substrate using laser irradiation.Type: ApplicationFiled: November 25, 2015Publication date: March 17, 2016Inventors: Duck II Suh, Kyoung Wan Kim, Yeo Jin Yoon, Ye Seul Kim, Ji Hye Kim
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Patent number: 9281446Abstract: Disclosed are a light emitting diode and a method of fabricating the same. The light emitting diode includes a GaN substrate having a plurality of through-holes; a GaN-based semiconductor stack structure placed on the substrate and including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; and a first electrode electrically connected to the first conductive-type semiconductor layer via the through-holes. The light emitting diode can reduce crystal defects and prevent reduction in light emitting area.Type: GrantFiled: February 27, 2013Date of Patent: March 8, 2016Assignee: SEOUL VIOSYS CO., LTD.Inventors: Duk Il Suh, Kyoung Wan Kim, Yeo Jin Yoon, Ji Hye Kim
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Patent number: 9269871Abstract: Disclosed is a light emitting diode (LED) comprising a light emitting stacked structure and an electrode structure formed to have a pattern on the light emitting stacked structure. The electrode structure of the LED includes a cluster of reflectors disposed along the pattern on the light emitting stacked structure, and a pad material layer formed to entirely cover the reflectors.Type: GrantFiled: April 30, 2015Date of Patent: February 23, 2016Assignee: SEOUL VIOSYS CO., LTD.Inventors: Ye Seul Kim, Da Yeon Jeong, Kyoung Wan Kim, Yeo Jin Yoon, Sang Hyun Oh
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Patent number: 9269867Abstract: A light-emitting device according to an exemplary embodiment of the present invention includes a first conductivity-type semiconductor layer disposed on a substrate; an active layer disposed on the first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer disposed on the active layer; and an irregular convex-concave pattern disposed on a surface of the first conductivity-type semiconductor layer. The irregular convex-concave pattern includes convex portions and concave portions, and the convex portions have irregular heights and the concave portions have irregular depths. The first conductivity-type semiconductor layer including the irregular convex-concave pattern is exposed from the active layer and the second conductivity-type semiconductor layer.Type: GrantFiled: November 11, 2013Date of Patent: February 23, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Ye Seul Kim, Shin Hyoung Kim, Kyoung Wan Kim, Yeo Jin Yoon, Jun Woong Lee, Tae Gyun Kim